2,161 research outputs found
Frequency and phase modulation performance of an injection-locked CW magnetron.
It is demonstrated that the output of a 2.45-GHz magnetron operated as a current-controlled oscillator through its pushing characteristic can lock to injection signals in times of the order of 100-500 ns depending on injection power, magnetron heater power, load impedance, and frequency offset of the injection frequency from the natural frequency of the magnetron. Accordingly, the magnetron can follow frequency and phase modulations of the injection signal, behaving as a narrow-band amplifier. The transmission of phase-shift-keyed data at 2 Mb/s has been achieved. Measurements of the frequency response and anode current after a switch of phase as a function of average anode current and heater power give new insight into the locking mechanisms and the noise characteristics of magnetrons
Quantum transport of Dirac electrons in graphene in the presence of a spatially modulated magnetic field
We have investigated the electrical transport properties of Dirac electrons
in a monolayer graphene sheet in the presence of a perpendicular magnetic field
that is modulated weakly and periodically along one direction.We find that the
Landau levels broaden into bands and their width oscillates as a function of
the band index and the magnetic field.We determine the component
of the magnetoconductivity tensor for this system which is shown to exhibit
Weiss oscillations.We also determine analytically the asymptotic expressions
for .We compare these results with recently obtained results for
electrically modulated graphene as well as those for magnetically modulated
conventional two-dimensional electron gas (2DEG) system.We find that in the
magnetically modulated graphene system cosidered in this work,Weiss
oscillations in have a reduced amplitude compared to the 2DEG but
are less damped by temperature while they have a higher amplitude than in the
electrically modulated graphene system. We also find that these oscillations
are out of phase by with those of the electrically modulated system while
they are in phase with those in the 2DEG system.Comment: Accepted in PRB: 10 pages, 3 figure
Proposal of a spin torque majority gate logic
A new spin based logic device is proposed. It is comprised of a common free
ferromagnetic layer separated by a tunnel junction from three inputs and one
output with separate fixed layers. It has the functionality of a majority gate
and is switched by spin transfer torque. Validity of its logic operation is
demonstrated by micromagnetic simulation. A version of such devices with
perpendicular magnetization is examined. Switching encompasses moving domain
walls. The device reuses most of the materials and structures from spin torque
RAM, and is entirely compatible with CMOS technology.Comment: 14 pages, 4 figure
- …