Reflection of electrons from a domain wall in magnetic nanojunctions

Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is calculated in the regime of strong electron reflection from the wall. It is shown that the corresponding magnetoresistance can be large, which is in a qualitative agreement with recent experimental observations. We also calculate the spin current flowing through the wall and the spin polarization of electron gas due to reflections from the domain wall.Comment: 7 pages, 4 figure

Features of Formation of Cr³⁺ Paramagnetic Centers in Strontium Titanate (SrTiO<inf>3</inf>) Implanted with Chromium Ions

© 2020, Pleiades Publishing, Ltd. Abstract: We present results of structural (XPS) and magnetic resonance (EPR) studies of single-crystal plates of strontium titanate (SrTiO3) heavily doped with chromium utilizing ion implantation technique. It was shown that the temperature of the oxide matrix during ion implantation (300 or 900 K) significantly affects the valence state of the implanted chromium impurity (Cr0 or Cr3+) and the depth profiles of its distribution in the SrTiO3 matrix. Using the EPR method, it was established that as a result of implantation of chromium impurity at an elevated substrate temperature during irradiation, the dominating color centers in the surface implanted oxide layer appear in the form of trivalent chromium ions in a cubic environment with a g-factor g = 1.976 and the value of the hyperfine coupling constant with the magnetic nucleus of 53Cr isotope, A = 16.2 × 10–4 cm–1. From a comparison of these data with parameters for the cubic Cr3+ impurity center in the SrTiO3 single crystal, it was concluded that this center is localized in the structural positions of titanium. Upon implantation of a chromium impurity in SrTiO3 at room temperature of the substrate, in addition to cubic Cr3+ centers, new signals were detected in the EPR spectra, apparently associated with the formation of oxygen vacancies in the implanted oxide. However, the number of these additional centers does not change significantly even after high-temperature heat treatment of samples in air at temperatures up to 900 K. It is noted that signals of this type also appear in the spectra of SrTiO3 samples obtained as a result of hot implantation and then subjected to high-temperature thermal annealing

Optical-controlled domain wall resistance in magnetic nanojunctions

Domain walls in ferromagnetic metals are known to be a source of resistance. In the present work resistance of a domain wall in a ferromagnetic nanojunction is investigated using the semiclassical approach. The analysis is based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Néel-type magnetic domain wall is considered and the effect of the electron-photon interaction on the resistance is studied. The results indicate that polarization and wavelength of the photon play a significant role in the magnetoresistance. The resistance of the nanojunction decreases as the wavelength of the photon increases. It is also shown that the domain wall resistance decreases by increasing the Fermi energy. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010