Limitation of the modulation method to smooth wire guide roughness

It was recently demonstrated that wire guide roughness can be suppressed by modulating the wire currents so that the atoms experience a time-averaged potential without roughness. We theoretically study the limitations of this technique. At low modulation frequency, we show that the longitudinal potential modulation produces a heating of the cloud and we compute the heating rate. We also give a quantum derivation of the rough conservative potential associated with the micro-motion of the atoms. At large modulation frequency, we compute the loss rate due to non adiabatic spin flip and show it presents resonnances at multiple modulation frequencies. These studies show that the modulation technique works for a wide range of experimental parameters. We also give conditions to realise radio-frequency evaporative cooling in such a modulated trap.Comment: 11 page

Experimental evidence for the breakdown of a Hartree-Fock approach in a weakly interacting Bose gas

We study the formation of a quasi-condensate in a nearly one dimensional, weakly interacting trapped atomic Bose gas. We show that a Hartree Fock (mean-field) approach fails to explain the presence of the quasi-condensate in the center of the cloud: the quasi-condensate appears through an interaction-driven cross-over and not a saturation of the excited states. Numerical calculations based on Bogoliubov theory give an estimate of the cross-over density in agreement with experimental results.Comment: submitted to Phys. Rev. Letter

Producing and Detecting Correlated atoms

We discuss experiments to produce and detect atom correlations in a degenerate or nearly degenerate gas of neutral atoms. First we treat the atomic analog of the celebrated Hanbury Brown Twiss experiment, in which atom correlations result simply from interference effects without any atom interactions.We have performed this experiment for both bosons and fermions. Next we show how atom interactions produce correlated atoms using the atomic analog of spontaneous four-wavemixing. Finally, we briefly mention experiments on a one dimensional gas on an atom chip in which correlation effects due to both interference and interactions have been observed.Comment: to appear in conference proceedings "Atomic Physics 20

Single photon emitters based on Ni/Si related defects in single crystalline diamond

We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose 10^12/cm^2 and 10^10/cm^2 resp.) due to creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in the spectral range between 767nm and 775nm and narrow line-widths of 2nm FWHM at room temperature. Measurements of the intensity auto-correlation functions prove single-photon emission. The investigated color centers can be coarsely divided into two groups: Drawing from photon statistics and the degree of polarization in excitation and emission we find that some color centers behave as two-level, single-dipole systems whereas other centers exhibit three levels and contributions from two orthogonal dipoles. In addition, some color centers feature stable and bright emission with saturation count rates up to 78kcounts/s whereas others show fluctuating count rates and three-level blinking.Comment: 7 pages, submitted to Applied Physics B, revised versio

Realizing a stable magnetic double-well potential on an atom chip

We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms

Thermal properties of AlN-based atom chips

We have studied the thermal properties of atom chips consisting o high thermal conductivity Aluminum Nitride (AlN) substrates on which gold microwires are directly deposited. We have measured the heating of wires of several widths and with different thermal couplings to the copper mount holding the chip. The results are in good agreement with a theoretical model where the copper mount is treated as a heat sink and the thermal interface resistance between the wire and the substrate is vanishing. We give analytical formulas describing the different transient heating regimes and the steady state. We identify criteria to optimize the design of a chip as well as the maximal currents $I_c$ that can be fed in the wires. For a 600 $\mu$m thick-chip glued on a copper block with Epotek H77, we find $I_c=16$ A for a 3 $\mu$m high, 200 $\mu$m wide-wire