Pseudoartrosis congénita de clavícula: a propósito de un caso

La pseudoartrosis congénita de clavícula es una entidad infrecuente de etiología aún controvertida. Su diagnóstico es sencillo y su abordaje terapéutico es siempre quirúrgico. Se presenta un nuevo caso de pseudoartrosis congenita de clavícula diagnosticado en un niño de 4 años de edad. El tratamiento consistió en decorticación de los fragmentos y síntesis con aguja de Kirschner. Se efectúa una revisión de la literatura abordando las teorías etiopatogénicas y el tratamiento de esta afección.Congenital pseudoarthrosis of the clavicle is an unfrequent entity with already controversial etiology. The diagnosis is easy and the therapeutic approach allways involves surgery. A new case of congenital pseudoarthrosis of the clavicle in a 4-year-old boy is reported. The treatment consisted in decortication of both fragments of the clavicle and fixation with a Kirschner wire. A review of the literature focused on etiopathogenic theories and treatment is also performed

Superconducting pi qubit with a ferromagnetic Josephson junction

Solid-state qubits have the potential for the large-scale integration and for the flexibility of layout for quantum computing. However, their short decoherence time due to the coupling to the environment remains an important problem to be overcome. We propose a new superconducting qubit which incorporates a spin-electronic device: the qubit consists of a superconducting ring with a ferromagnetic pi junction which has a metallic contact and a normal Josephson junction with an insulating barrier. Thus, a quantum coherent two-level state is formed without an external magnetic field. This feature and the simple structure of the qubit make it possible to reduce its size leading to a long decoherence time.Comment: 4 pages, 3 figure

Classical Coulomb three-body problem in collinear eZe configuration

Classical dynamics of two-electron atom and ions H$^{-}$, He, Li$^{+}$, Be$^{2+}$,... in collinear eZe configuration is investigated. It is revealed that the mass ratio $\xi$ between necleus and electron plays an important role for dynamical behaviour of these systems. With the aid of analytical tool and numeircal computation, it is shown that thanks to large mass ratio $\xi$, classical dynamics of these systems is fully chaotic, probably hyperbolic. Experimental manifestation of this finding is also proposed.Comment: Largely rewritten. 21 pages. All figures are available in http://ace.phys.h.kyoto-u.ac.jp/~sano/3-body/index.htm

Fitting formulae for evolution tracks of massive stars under extreme metal poor environments for population synthesis calculations and star cluster simulations

We have devised fitting formulae for evolution tracks of massive stars with $8 \lesssim M/M_\odot \lesssim 160$ under extreme metal poor (EMP) environments for $\log (Z/Z_\odot) = -2, -4, -5, -6$, and $-8$, where $M_\odot$ and $Z_\odot$ are the solar mass and metallicity, respectively. Our fitting formulae are based on reference stellar models which we have newly obtained by simulating the time evolutions of EMP stars. Our fitting formulae take into account stars ending with blue supergiant (BSG) stars, and stars skipping Hertzsprung gap (HG) phases and blue loops, which are characteristics of massive EMP stars. In our fitting formulae, stars may remain BSG stars when they finish their core Helium burning (CHeB) phases. Our fitting formulae are in good agreement with our stellar evolution models. We can use these fitting formulae on the SSE, BSE, NBODY4, and NBODY6 codes, which are widely used for population synthesis calculations and star cluster simulations. These fitting formulae should be useful to make theoretical templates of binary black holes formed under EMP environments

Graphene as a buffer layer for silicon carbide-on-insulator structures

We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO2 substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities

Coupled oscillators and Feynman's three papers

According to Richard Feynman, the adventure of our science of physics is a perpetual attempt to recognize that the different aspects of nature are really different aspects of the same thing. It is therefore interesting to combine some, if not all, of Feynman's papers into one. The first of his three papers is on the ``rest of the universe'' contained in his 1972 book on statistical mechanics. The second idea is Feynman's parton picture which he presented in 1969 at the Stony Brook conference on high-energy physics. The third idea is contained in the 1971 paper he published with his students, where they show that the hadronic spectra on Regge trajectories are manifestations of harmonic-oscillator degeneracies. In this report, we formulate these three ideas using the mathematics of two coupled oscillators. It is shown that the idea of entanglement is contained in his rest of the universe, and can be extended to a space-time entanglement. It is shown also that his parton model and the static quark model can be combined into one Lorentz-covariant entity. Furthermore, Einstein's special relativity, based on the Lorentz group, can also be formulated within the mathematical framework of two coupled oscillators.Comment: 31 pages, 6 figures, based on the concluding talk at the 3rd Feynman Festival (Collage Park, Maryland, U.S.A., August 2006), minor correction

A hierarchical research by large-scale and ab initio electronic structure theories -- Si and Ge cleavage and stepped (111)-2x1 surfaces --

The ab initio calculation with the density functional theory and plane-wave bases is carried out for stepped Si(111)-2x1 surfaces that were predicted in a cleavage simulation by the large-scale (order-N) electronic structure theory (T. Hoshi, Y. Iguchi and T. Fujiwara, Phys. Rev. B72 (2005) 075323). The present ab initio calculation confirms the predicted stepped structure and its bias-dependent STM image. Moreover, two (meta)stable step-edge structures are found and compared. The investigation is carried out also for Ge(111)-2x1 surfaces, so as to construct a common understanding among elements. The present study demonstrates the general importance of the hierarchical research between large-scale and ab initio electronic structure theories.Comment: 5 pages, 4 figures, to appear in Physica

Efficacy of lamivudine for preventing hepatocellular carcinoma in chronic hepatitis B: A multicenter retrospective study of 2795 patients

ArticleHEPATOLOGY RESEARCH. 32(3): 173-184 (2005)journal articl

Formation of air-gap structure at a GaN epilayer/substrate interface by using an InN interlayer

We propose a new technique for “air‐gap” formation at a GaN/sapphire interface by using an InN interlayer. This is aimed to grow epitaxial GaN films with reduced stress and cracks. First, an InN interlayer of about 0.2 μm thick is grown at 600 °C in atmospheric pressure. Then a 30 nm‐thick GaN buffer layer is grown on the InN layer at 550 °C. The substrate temperature is ramped up to 1000 °C in the NH3 flow, and finally a 1.5 μm‐thick GaN epilayer is grown on the annealed GaN buffer layer using nitrogen carrier gas. Consequently, an “air‐gap” structure is naturally formed close to the substrate surface. During the ramping period of substrate temperature, the InN layer decomposes due to its thermal instability and metallic In is formed. It is found that metallic In drops as a result of InN decomposition contribute to the air‐gap formation. No cracks are found on the GaN surface and a reduced stress in the layer is confirmed by PL and Raman shift measurements