Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

10.1063/1.1483913Applied Physics Letters80224136-4138APPL

Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs

10.1016/j.jcrysgro.2004.04.074Journal of Crystal Growth2683-4 SPEC. ISS.470-474JCRG

Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

10.1016/j.jcrysgro.2004.12.020Journal of Crystal Growth2753-4440-447JCRG

Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

10.1063/1.3465327Journal of Applied Physics1082-JAPI

1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links

We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3- m wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate.With an optical bandgap of 0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3- µm wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate = 10sup12 transmission of 10-Gb Ethernet data at 1.3- µm wavelength is successfully demonstrated