In situ characterization of CVD-processes by Raman scattering: Determination of the kinetics of the hydrogen reduction of WF6

Applied Science

Simulation and validation of SiO2_2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor

Combining a slightly modified version of the chemical reaction mechanism for silicon-dioxide LPCVD from TEOS as proposed by Coltrin and coworkers, and the commercially available CFD program CFD-ACE+, a 21) model has been derived for gas flow, transport phenomena and deposition chemistry in the ASM A412 vertical 300mm multiwafer reactor. Silicon-dioxide deposition from TEOS is strongly influenced by gas-phase reactions, producing a reactive intermediate that is responsible for the majority of deposition. This phenomenon underlines the importance of the chemistry model in simulations. As a result of the gas phase intermediate, strong radial non-uniformities are observed. The simulation results have been validated against experimental growth rate data for various process conditions