Torque Production at Different Velocities as a Predictor of the Proportion of Fast-twitch Muscle Fibers in Skeletal Muscles of Athletes

© 2020, Pleiades Publishing, Inc. Abstract: The aim of the study was to evaluate the possibility to predict the muscle fiber-type proportion in men of different sports specialization by testing the maximal torque production by knee extensors at different velocities. For this reason the proportion of fast- and slow-twitch muscle fibers (MFs) in m. vastus lateralis of 23 athletes (11 endurance and 12 power athletes), as well the maximal torque production of knee extensors at various angular velocities in isokinetic mode were determined. The group of strength trained athletes significantly exceeded the group of endurance trained athletes in body mass, body mass index, volume of the m. quadriceps femoris, maximum torque production, and specific force at angular velocities 30, 180 and 300 degrees per second. In contrast to cross-sectional area (CSA) of slow-twitch MFs, the average CSA of fast-twitch MFs and the proportion of fast-twitch MFs in the group of power athletes significantly exceeded those in the group of endurance athletes. In the combined group of volunteers (n = 23), the proportion of fast-twitch MFs significantly correlated with the torque production at high angular velocities (r = 0.51 and p = 0.01 at 180 deg/s; r = 0.47 and p = 0.02 at 300 deg/s). We did not find any correlation between these parameters in the separate groups of power and endurance athletes. The results indicate a low accuracy in predicting the proportion of fast-twitch MF in m. vastus lateralis in athletes using the maximal torque production of knee extensors at different angular velocities. Significant correlation between the proportion of fast-twitch MF and maximal torque at high angular velocities in the general group (n = 23) was due to the presence of two significantly different subgroups

Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 μm

Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 μm