Silicon ribbon growth by a capillary action shaping technique. Annual report (Quarterly technical progress report No. 9)

Progress on the technological and economical assessment of ribbon growth of silicon by a capillary action shaping technique is reported. Progress in scale-up of the process from 50 mm to 100 mm ribbon widths is presented, the use of vitreous carbon as a crucible material is analyzed, and preliminary tests of CVD Si/sub 3/N/sub 4/ as a potential die material are reported. Diffusion length measurements by SEM, equipment and procedure for defect display under MOS structure in silicon ribbon for lifetime interpretation, and an assessment of ribbon technology are discussed. (WHK

Silicon ribbon growth by a capillary action shaping technique. Quraterly technical progress report No. 8

Three papers are included. A separate abstract was prepared for each one. (MHR

Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

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