170 research outputs found
Topological Objects in Two-component Bose-Einstein Condensates
We study the topological objects in two-component Bose-Einstein condensates.
We compare two competing theories of two-component Bose-Einstein condensate,
the popular Gross-Pitaevskii theory and the recently proposed gauge theory of
two-component Bose-Einstein condensate which has an induced vorticity
interaction. We show that two theories produce very similar topological
objects, in spite of the obvious differences in dynamics. Furthermore we show
that the gauge theory of two-component Bose-Einstein condensate, with the U(1)
gauge symmetry, is remarkably similar to the Skyrme theory. Just like the
Skyrme theory the theory admits the non-Abelian vortex, the helical vortex, and
the vorticity knot. We construct the lightest knot solution in two-component
Bose-Einstein condensate numerically, and discuss how the knot can be
constructed in the spin-1/2 condensate of atoms.Comment: 18 pages, 15 figures, Phys. Rev. A in pres
Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient
We report on the anomalous Hall coefficient and longitudinal resistivity
scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055).
As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing
temperature, we find n ~ 2 to be consistent with recent theories on the
intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing
temperatures far above the optimum, we note n > 3, similar behavior to certain
inhomogeneous systems. This observation of atypical behavior agrees well with
characteristic features attributable to spherical resonance from metallic
inclusions from optical spectroscopy measurements.Comment: 3 pages, 3 figure
Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory
Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices
Interplay between carrier and impurity concentrations in annealed GaMnAs intrinsic anomalous Hall Effect
Investigating the scaling behavior of annealed GaMnAs anomalous
Hall coefficients, we note a universal crossover regime where the scaling
behavior changes from quadratic to linear, attributed to the anomalous Hall
Effect intrinsic and extrinsic origins, respectively. Furthermore, measured
anomalous Hall conductivities when properly scaled by carrier concentration
remain constant, equal to theoretically predicated values, spanning nearly a
decade in conductivity as well as over 100 K in T. Both the qualitative
and quantitative agreement confirms the validity of new equations of motion
including the Berry phase contributions as well as tunablility of the intrinsic
anomalous Hall Effect.Comment: 4 pages, 5 figure
Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce
Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and
n+GaAs:Si samples implanted under the same conditions, transport and magnetic
properties show marked differences. Transport measurements show anomalies,
consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as
well as the extraordinary Hall Effect up to the observed magnetic ordering
temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier
concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K
Determination of the Upper Critical Field of a Single Crystal LiFeAs: The Magnetic Torque Study up to 35 Tesla
We report on the upper critical field B_c2 of a superconducting LiFeAs single
crystal with T_c~16 K, determined from magnetic torque measurements in
dc-magnetic fields up to 35 T and at temperatures down to 0.3 K. B_c2 at 0.3 K
is obtained to be 26.4 T and 15.5 T for the applied field B_a||ab and B_a||c,
respectively. The anisotropy parameter = is ~ 3 at
T_c and decreases to 1.7 as , showing rather isotropic
superconductivity. While B_c2 is orbitally-limited for B_a||c, the
spin-paramagnetic effect is evident in the temperature dependence of B_c2 for
B_a||abComment: 4 pages, 4 figures, revised version to be published in J. Phys. Soc.
Jpn. as a letter articl
Advances in ab-initio theory of Multiferroics. Materials and mechanisms: modelling and understanding
Within the broad class of multiferroics (compounds showing a coexistence of
magnetism and ferroelectricity), we focus on the subclass of "improper
electronic ferroelectrics", i.e. correlated materials where electronic degrees
of freedom (such as spin, charge or orbital) drive ferroelectricity. In
particular, in spin-induced ferroelectrics, there is not only a {\em
coexistence} of the two intriguing magnetic and dipolar orders; rather, there
is such an intimate link that one drives the other, suggesting a giant
magnetoelectric coupling. Via first-principles approaches based on density
functional theory, we review the microscopic mechanisms at the basis of
multiferroicity in several compounds, ranging from transition metal oxides to
organic multiferroics (MFs) to organic-inorganic hybrids (i.e. metal-organic
frameworks, MOFs)Comment: 22 pages, 9 figure
Droplet-like Fermi surfaces in the anti-ferromagnetic phase of EuFeAs, an Fe-pnictide superconductor parent compound
Using angle resolved photoemission it is shown that the low lying electronic
states of the iron pnictide parent compound EuFeAs are strongly
modified in the magnetically ordered, low temperature, orthorhombic state
compared to the tetragonal, paramagnetic case above the spin density wave
transition temperature. Back-folded bands, reflected in the orthorhombic/
anti-ferromagnetic Brillouin zone boundary hybridize strongly with the
non-folded states, leading to the opening of energy gaps. As a direct
consequence, the large Fermi surfaces of the tetragonal phase fragment, the low
temperature Fermi surface being comprised of small droplets, built up of
electron and hole-like sections. These high resolution ARPES data are therefore
in keeping with quantum oscillation and optical data from other undoped
pnictide parent compounds.Comment: 4 figures, 6 page
Specific Heat Discontinuity, deltaC, at Tc in BaFe2(As0.7P0.3)2 - Consistent with Unconventional Superconductivity
We report the specific heat discontinuity, deltaC/Tc, at Tc = 28.2 K of a
collage of single crystals of BaFe2(As0.7P0.3)2 and compare the measured value
of 38.5 mJ/molK**2 with other iron pnictide and iron chalcogenide (FePn/Ch)
superconductors. This value agrees well with the trend established by Bud'ko,
Ni and Canfield who found that deltaC/Tc ~ a*Tc**2 for 14 examples of doped
Ba1-xKxFe2As2 and BaFe2-xTMxAs2, where the transition metal TM=Co and Ni. We
extend their analysis to include all the FePn/Ch superconductors for which
deltaC/Tc is currently known and find deltaC/Tc ~ a*Tc**1.9 and a=0.083
mJ/molK**4. A comparison with the elemental superconductors with Tc>1 K and
with A-15 superconductors shows that, contrary to the FePn/Ch superconductors,
electron-phonon-coupled conventional superconductors exhibit a significantly
different dependence of deltaC on Tc, namely deltaC/Tc ~ Tc**0.9. However
deltaC/gamma*Tc appears to be comparable in all three classes (FePn/Ch,
elemental and A-15) of superconductors with, e. g., deltaC/gamma*Tc=2.4 for
BaFe2(As0.7P0.3)2. A discussion of the possible implications of these
phenomenological comparisons for the unconventional superconductivity believed
to exist in the FePn/Ch is given.Comment: some disagreement in reference and footnote numbering with the
published versio
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