Influence of preparation conditions on the microstructure of ZnO thin film prepared by electrodeposition

The effect of electrochemical deposition duration and the heat treatment at 450 °С within 1 hour on the microstructure of ZnO thin films, including their phase composition, lattice parameters, microstrain, grain size and surface morphology is investigated. The empirical relationships allowing to predict the molar composition and the ZnO/FTO thickness ratio depending on the specific charge passing through the substrate during the film formation process have been obtained. According to scanning electron microscopy, there is a consolidation of the film crystallites after the heat treatment leading to formation of hexagonal nanorods. An average size of the crystallites before the heat treatment is 0.727 μm, and after the heat treatment it is 0.455 μ

Influence of preparation conditions on the microstructure of ZnO thin film prepared by electrodeposition

The effect of electrochemical deposition duration and the heat treatment at 450 °С within 1 hour on the microstructure of ZnO thin films, including their phase composition, lattice parameters, microstrain, grain size and surface morphology is investigated. The empirical relationships allowing to predict the molar composition and the ZnO/FTO thickness ratio depending on the specific charge passing through the substrate during the film formation process have been obtained. According to scanning electron microscopy, there is a consolidation of the film crystallites after the heat treatment leading to formation of hexagonal nanorods. An average size of the crystallites before the heat treatment is 0.727 μm, and after the heat treatment it is 0.455 μ

Influence of annealing on microstructure and optical properties of hot wall deposited PbxSn(1−x)S thin films

PbxSn(1 − x)S (0.05 < x < 0.20) thin films with the thickness of 2 μm were deposited on glass substrates using hot wall vacuum deposition method at the vacuum pressure of 5 × 10−4 Pa, wall temperature of 600°С, substrate temperature of 300°С and subsequently annealed at 450 °C in vacuum at 5 × 10−4 Pa. The microstructure and optical properties of the as-deposited and annealed films were examined in relation to the film composition. The explanations of lattice parameter deviations from the bulk crystals for both as-deposited and annealed PbxSn(1 − x)S thin films are discussed. The PbxSn(1 − x)S thin films exhibit a preferred orientation around the [111] direction. The annealing decreases the film microstrain values and increases the grain size and the degree of preferred orientation. Thermal probe measurements showed the sulfur-deficient films to be p-type and the sulfur-rich films to be n-type. The PbxSn(1 − x)S films exhibit direct allowed transitions with energy band gap Eg(d) increasing with the increase of Pb mole fraction. The Eg(d) values for as-deposited films range from 0.95 to 0.98 eV and for annealed films they variy from 0.90 to 0.94 eV