Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes

Electron scattering rates in metallic single-walled carbon nanotubes are studied using an atomic force microscope as an electrical probe. From the scaling of the resistance of the same nanotube with length in the low and high bias regimes, the mean free paths for both regimes are inferred. The observed scattering rates are consistent with calculations for acoustic phonon scattering at low biases and zone boundary/optical phonon scattering at high biases.Comment: 4 pages, 5 figure

Quantum Interference Effects in Electronic Transport through Nanotube Contacts

Quantum interference has dramatic effects on electronic transport through nanotube contacts. In optimal configuration the intertube conductance can approach that of a perfect nanotube ($4e^2/h$). The maximum conductance increases rapidly with the contact length up to 10 nm, beyond which it exhibits long wavelength oscillations. This is attributed to the resonant cavity-like interference phenomena in the contact region. For two concentric nanotubes symmetry breaking reduces the maximum intertube conductance from $4e^2/h$ to $2e^2/h$. The phenomena discussed here can serve as a foundation for building nanotube electronic circuits and high speed nanoscale electromechanical devices

Stochastic Heterostructures in B/N-Doped Carbon Nanotubes

Carbon nanotubes are one-dimensional and very narrow. These obvious facts imply that under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of exploiting such fluctuations to create interesting devices. Using self-consistent tight-binding (SCTB), we study heavily doped highly compensated nanotubes, revealing the spontaneous formation of structures resembling chains of random quantum dots, or nano-scale diode-like elements in series. We also consider truly isolated impurities, revealing simple scaling properties of bound state sizes and energies.Comment: 4 pages RevTeX, 4 PostScript figure

Reversible Band Gap Engineering in Carbon Nanotubes by Radial Deformation

We present a systematic analysis of the effect of radial deformation on the atomic and electronic structure of zigzag and armchair single wall carbon nanotubes using the first principle plane wave method. The nanotubes were deformed by applying a radial strain, which distorts the circular cross section to an elliptical one. The atomic structure of the nanotubes under this strain are fully optimized, and the electronic structure is calculated self-consistently to determine the response of individual bands to the radial deformation. The band gap of the insulating tube is closed and eventually an insulator-metal transition sets in by the radial strain which is in the elastic range. Using this property a multiple quantum well structure with tunable and reversible electronic structure is formed on an individual nanotube and its band-lineup is determined from first-principles. The elastic energy due to the radial deformation and elastic constants are calculated and compared with classical theories.Comment: To be appear in Phys. Rev. B, Apr 15, 200

Electronic transport through carbon nanotubes -- effects of structural deformation and tube chirality

Atomistic simulations using a combination of classical forcefield and Density-Functional-Theory (DFT) show that carbon atoms remain essentially sp2 coordinated in either bent tubes or tubes pushed by an atomically sharp AFM tip. Subsequent Green's-function-based transport calculations reveal that for armchair tubes there is no significant drop in conductance, while for zigzag tubes the conductance can drop by several orders of magnitude in AFM-pushed tubes. The effect can be attributed to simple stretching of the tube under tip deformation, which opens up an energy gap at the Fermi surface.Comment: To appear in Physical Review Letter

Electromechanical properties of suspended Graphene Nanoribbons

Graphene nanoribbons present diverse electronic properties ranging from semiconducting to half-metallic, depending on their geometry, dimensions and chemical composition. Here we present a route to control these properties via externally applied mechanical deformations. Using state-of-the-art density functional theory calculations combined with classical elasticity theory considerations, we find a remarkable Young's modulus value of ~7 TPa for ultra-narrow graphene strips and a pronounced electromechanical response towards bending and torsional deformations. Given the current advances in the synthesis of nanoscale graphene derivatives, our predictions can be experimentally verified opening the way to the design and fabrication of miniature electromechanical sensors and devices based on ultra-narrow graphene nanoribbons.Comment: 12 pages, 6 figure

Tunable stress and controlled thickness modification in graphene by annealing

Graphene has many unique properties which make it an attractive material for fundamental study as well as for potential applications. In this paper, we report the first experimental study of process-induced defects and stress in graphene using Raman spectroscopy and imaging. While defects lead to the observation of defect-related Raman bands, stress causes shift in phonon frequency. A compressive stress (as high as 2.1 GPa) was induced in graphene by depositing a 5 nm SiO2 followed by annealing, whereas a tensile stress (~ 0.7 GPa) was obtained by depositing a thin silicon capping layer. In the former case, both the magnitude of the compressive stress and number of graphene layers can be controlled or modified by the annealing temperature. As both the stress and thickness affect the physical properties of graphene, this study may open up the possibility of utilizing thickness and stress engineering to improve the performance of graphene-based devices. Local heating techniques may be used to either induce the stress or reduce the thickness selectively.Comment: 19 pages, 7 figures, accepted by ACS nan