Definitive observation of the dark triplet ground state of charged excitons in high magnetic fields

The ground state of negatively charged excitons (trions) in high magnetic fields is shown to be a dark triplet state, confirming long-standing theoretical predictions. Photoluminescence (PL), reflection, and PL excitation spectroscopy of CdTe quantum wells reveal that the dark triplet trion has lower energy than the singlet trion above 24 Tesla. The singlet-triplet crossover is "hidden" (i.e., the spectral lines themselves do not cross due to different Zeeman energies), but is confirmed by temperature-dependent PL above and below 24 T. The data also show two bright triplet states.Comment: 4 figure

"Quasi two-dimensional" spin distributions in II-VI magnetic semiconductor heterostructures: Clustering and dimensionality

Spin clustering in diluted magnetic semiconductors (DMS) arises from antiferromagnetic exchange between neighboring magnetic cations and is a strong function of reduced dimensionality. Epitaxially-grown single monolayers and abrupt interfaces of DMS are, however, never perfectly two-dimensional (2D) due to the unavoidable inter-monolayer mixing of atoms during growth. Thus the magnetization of DMS heterostructures, which is strongly modified by spin clustering, is intermediate between that of 2D and 3D spin distributions. We present an exact calculation of spin clustering applicable to arbitrary distributions of magnetic spins in the growth direction. The results reveal a surprising insensitivity of the magnetization to the form of the intermixing profile, and identify important limits on the maximum possible magnetization. High-field optical studies of heterostructures containing "quasi-2D" spin distributions are compared with calculation.Comment: 5 pages (RevTeX), 5 embedded EPS figs, published in PRB v61 p1736 (2000

Binding Energy of Charged Excitons in ZnSe-based Quantum Wells

Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively () and positively (X+) charged excitons are measured as functions of quantum well width, free carrier density and in external magnetic fields up to 47 T. The binding energy of shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to 29 A. The binding energies of X+ are about 25% smaller than the binding energy in the same structures. The magnetic field behavior of and X+ binding energies differ qualitatively. With growing magnetic field strength, increases its binding energy by 35-150%, while for X+ it decreases by 25%. Zeeman spin splittings and oscillator strengths of excitons and trions are measured and discussed

Voltage control of nuclear spin in ferromagnetic Schottky diodes

We employ optical pump-probe spectroscopy to investigate the voltage dependence of spontaneous electron and nuclear spin polarizations in hybrid MnAs/n-GaAs and Fe/n-GaAs Schottky diodes. Through the hyperfine interaction, nuclear spin polarization that is imprinted by the ferromagnet acts on conduction electron spins as an effective magnetic field. We demonstrate tuning of this nuclear field from <0.05 to 2.4 kG by varying a small bias voltage across the MnAs device. In addition, a connection is observed between the diode turn-on and the onset of imprinted nuclear polarization, while traditional dynamic nuclear polarization exhibits relatively little voltage dependence.Comment: Submitted to Physical Review B Rapid Communications. 15 pages, 3 figure

1D Exciton Spectroscopy of Semiconductor Nanorods

We have theoretically shown that optical properties of semiconductor nanorods are controlled by 1D excitons. The theory, which takes into account anisotropy of spacial and dielectric confinement, describes size dependence of interband optical transitions, exciton binding energies. We have demonstrated that the fine structure of the ground exciton state explains the linear polarization of photoluminescence. Our results are in good agreement with the measurements in CdSe nanorods

Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures

The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor structures which are not symmetric with respect to spatial inversion, for instance in bulk zinc-blend semiconductors. The interaction has both symmetric and antisymmetric parts with respect to permutation of spin components. The antisymmetric (Dzyaloshinskii-Moriya) interaction is the strongest one. It contributes significantly into spin relaxation of localized electrons; in particular, it governs low-temperature spin relaxation in n-GaAs with the donor concentration near 10^16cm-3. The interaction must be allowed for in designing spintronic devices, especially spin-based quantum computers, where it may be a major source of decoherence and errors

Spin relaxation: From 2D to 1D

In inversion asymmetric semiconductors, spin-orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D'yakonov Perel' mechanism, describes increasing electron-spin relaxation times for two-dimensional conducting layers with decreasing channel width. The slow-down of the spin relaxation can be understood as a precursor of the one-dimensional limit

Onset of Superfluidity in 4He Films Adsorbed on Disordered Substrates

We have studied 4He films adsorbed in two porous glasses, aerogel and Vycor, using high precision torsional oscillator and DC calorimetry techniques. Our investigation focused on the onset of superfluidity at low temperatures as the 4He coverage is increased. Torsional oscillator measurements of the 4He-aerogel system were used to determine the superfluid density of films with transition temperatures as low as 20 mK. Heat capacity measurements of the 4He-Vycor system probed the excitation spectrum of both non-superfluid and superfluid films for temperatures down to 10 mK. Both sets of measurements suggest that the critical coverage for the onset of superfluidity corresponds to a mobility edge in the chemical potential, so that the onset transition is the bosonic analog of a superconductor-insulator transition. The superfluid density measurements, however, are not in agreement with the scaling theory of an onset transition from a gapless, Bose glass phase to a superfluid. The heat capacity measurements show that the non-superfluid phase is better characterized as an insulator with a gap.Comment: 15 pages (RevTex), 21 figures (postscript

Spin-injection Hall effect in a planar photovoltaic cell

Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum-relativistic nature of spin-charge transport and which meets all these key requirements on the spin detection. The two-dimensional electron-hole gas photo-voltaic cell we designed to observe the SIHE allows us to develop a quantitative microscopic theory of the phenomenon and to demonstrate its direct application in optoelectronics. We report an experimental realization of a non-magnetic spin-photovoltaic effect via the SIHE, rendering our device an electrical polarimeter which directly converts the degree of circular polarization of light to a voltage signal.Comment: 14 pages, 4 figure

Landau Level Crossings and Extended-State Mapping in Magnetic Two-dimensional Electron Gases

We present longitudinal and Hall magneto-resistance measurements of a ``magnetic'' two-dimensional electron gas (2DEG) formed in modulation-doped Zn$_{1-x-y}$Cd$_{x}$Mn$_{y}$Se quantum wells. The electron spin splitting is temperature and magnetic field dependent, resulting in striking features as Landau levels of opposite spin cross near the Fermi level. Magnetization measurements on the same sample probe the total density of states and Fermi energy, allowing us to fit the transport data using a model involving extended states centered at each Landau level and two-channel conduction for spin-up and spin-down electrons. A mapping of the extended states over the whole quantum Hall effect regime shows no floating of extended states as Landau levels cross near the Fermi level.Comment: 10 pages, 4 figures, submitted to Phys. Rev.