Modern treatment of endometrial local hyperplastic processes from positions of the pathogenic approach

Purpose of research: to improve the treatment effectiveness of patients with endometrial local hyperplasia by use of endoscopic technologies and pathogenetical postoperative therapy. Materials and methods. 66 women whose treatment algorithm included 4 stages (hysteroscopic polyp ablation followed by the morphological study, hormonal therapy aimed at the endometrium suppression, hormonal status optimization and dispensary observation within 5 years) were the subject of the study. After complex examination and histological verification of endometrial polyposis diagnosis patients were divided into two groups: A (n = 34) with the immune corrective therapy and B (n = 32). Examination algorithm included the endometrial immune histochemical examination with its immune histochemical profile definition. Study results. Histological screening of endometrium state resulted that 9 (26.5%) patients in the A group had the chronic endometritis features. The corresponding index for the B group stood for 15 patients (46.9%) that is 20.4% higher compared to the A group. Estrogen receptors expression with the background of progestogen treatment indicated the 1.2 times lowering for both groups. The viral and bacterial complex screening indicated the endometrial pathogenic contamination dramatic decrease. Study of tumor necrosis factor’s level determined the straightforward tendency with the CD 138 index dynamics. In a year term the complete treatment effect in A group was observed among 29 patients (85.2%), and the endometrial polyposis recurrence was observed among 5 (14.8%) patients. Conclusions. It is necessary to take into account the woman’s age, joint genital and somatic pathology’s presence and the immune histochemical profile of hyperplastic endometrial while determining the endometrial pathology differentiated treatment tactics. Additional immune corrective therapy with the antibacterial treatment determines the receptor phenotype restoration, normalization of tumor necrosis factor-α lever and increases the endometrial polyposis treatment effectiveness up to 22.7%

Study on Cu2ZnSnSe4 crystals and heterojunctions on their basis

The most promising materials for the solar radiation converters are such compounds as CdTe and Cu(In, Ga)Se2, CuIn(S, Se)2, CuGa(S, Se)2 solid solutions. However, the uneconomic nature of Cd, Te and the limited supply of In and Ga, as well as their high cost, force researchers to replace In and Ga with the more common elements of II and IV groups, namely Zn and Sn. Apart from that, researchers are now testing such new semiconductor compounds as ZnSnS4, Cu2ZnSnSe4, and solid solutions on their basis. These compounds have a band gap width (Eg ≈ 1.5 eV) close to optimal for the conversion of solar energy, a high light absorption coefficient (≈ 105cm-1), a long lifetime and a high mobility of charge carriers. Moreover, the interest in such semiconductor heterojunctions as TiO2/ZnSnS4, which have several advantages over homo-transitions, is steadily growing at present. The paper presents results studies of kinetic properties of Cu2ZnSnSe4 crystals. We fabricated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions, determined their main electrical parameters and built their energy diagram. The Cu2ZnSnSe4 crystals have p-type conductivity and the Hall coefficient practically independent of temperature. The temperature dependence of the electrical conductivity σ for Cu2ZnSnSe4 crystalsis metallic in character, i. e. σ decreases with increasing temperature, which is caused by a decrease in the mobility of the charge carriers with the growth of T. Thermoelectric power for the samples is positive, which also indicates the prevalence of p-type conductivity. In this study, the n-TiO2/p-Cu2ZnSnSe4 heterojunctions were produced by reactive magnetron sputtering of a thin TiO2 film on the Cu2ZnSnSe4 substrate. The energy diagram of the investigated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions was constructed in accordance with the Anderson model, without taking into account the surface electrical states and the dielectric layer, based on the values of the energy parameters of semiconductors determined experimentally and taken from literary sources. The authors have also investigated electrical properties of the heterojunctions: the value of the potential barrier was determined, the value of the series resistance and shunt resistance (respectively, Rs = 8 W and Rsh = 5.8 kW) at room temperature. The dominant mechanisms of current transfer were established: tunneling-recombination mechanism in the voltage range from 0 to 0.3 V, and over-barrier emission and tunneling with inverse displacement in the voltage range from 0.3 to 0.45 V

Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC

Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/p-SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/p-Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/p-SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage Voc = 1.84 V and the short-circuit current density Isc = 2.9 mA/cm2 under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample

Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature). The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i. e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples ispositive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunneling at reverse bias