98 research outputs found
Numerical studies of the fractional quantum Hall effect in systems with tunable interactions
The discovery of the fractional quantum Hall effect in GaAs-based
semiconductor devices has lead to new advances in condensed matter physics, in
particular the possibility for exotic, topological phases of matter that
possess fractional, and even non-Abelian, statistics of quasiparticles. One of
the main limitations of the experimental systems based on GaAs has been the
lack of tunability of the effective interactions between two-dimensional
electrons, which made it difficult to stabilize some of the more fragile
states, or induce phase transitions in a controlled manner. Here we review the
recent studies that have explored the effects of tunability of the interactions
offered by alternative two-dimensional systems, characterized by non-trivial
Berry phases and including graphene, bilayer graphene and topological
insulators. The tunability in these systems is achieved via external fields
that change the mass gap, or by screening via dielectric plate in the vicinity
of the device. Our study points to a number of different ways to manipulate the
effective interactions, and engineer phase transitions between quantum Hall
liquids and compressible states in a controlled manner.Comment: 9 pages, 4 figures, updated references; review for the CCP2011
conference, to appear in "Journal of Physics: Conference Series
Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
We investigate the magnetotransport properties of quasi-free standing
epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization
in Ar, followed by H intercalation. At the charge neutrality point the
longitudinal resistance shows an insulating behavior, which follows a
temperature dependence consistent with variable range hopping transport in a
gapped state. In a perpendicular magnetic field, we observe quantum Hall states
(QHSs) both at filling factors () multiple of four (), as
well as broken valley symmetry QHSs at and . These results
unambiguously show that the quasi-free standing graphene bilayer grown on the
Si-face of SiC exhibits Bernal stacking.Comment: 12 pages, 5 figure
Relaxation and Dephasing in a Two-Electron 13C Nanotube Double Quantum Dot
We use charge sensing of Pauli blockade (including spin and isospin) in a
two-electron 13C nanotube double quantum dot to measure relaxation and
dephasing times. The relaxation time, T1, first decreases with parallel
magnetic field then goes through a minimum in a field of 1.4 T. We attribute
both results to the spin-orbit-modified electronic spectrum of carbon
nanotubes, which suppresses hyperfine mediated relaxation and enhances
relaxation due to soft phonons. The inhomogeneous dephasing time, T2*, is
consistent with previous data on hyperfine coupling strength in 13C nanotubes.Comment: related papers at http://marcuslab.harvard.ed
High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
The unique property of bilayer graphene to show a band gap tunable by
external electrical fields enables a variety of different device concepts with
novel functionalities for electronic, optoelectronic and sensor applications.
So far the operation of bilayer graphene based field effect transistors
requires two individual gates to vary the channel's conductance and to create a
band gap. In this paper we report on a method to increase the on/off ratio in
single gated bilayer graphene field effect transistors by adsorbate doping. The
adsorbate dopants on the upper side of the graphene establish a displacement
field perpendicular to the graphene surface breaking the inversion symmetry of
the two graphene layers. Low temperature measurements indicate, that the
increased on/off ratio is caused by the opening of a mobility gap. Beside field
effect transistors the presented approach can also be employed for other
bilayer graphene based devices like photodetectors for THz to infrared
radiation, chemical sensors and in more sophisticated structures such as
antidot- or superlattices where an artificial potential landscape has to be
created.Comment: 4 pages, 4 figure
Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
We investigate electronic transport in high mobility (\textgreater 100,000
cm/Vs) trilayer graphene devices on hexagonal boron nitride, which
enables the observation of Shubnikov-de Haas oscillations and an unconventional
quantum Hall effect. The massless and massive characters of the TLG subbands
lead to a set of Landau level crossings, whose magnetic field and filling
factor coordinates enable the direct determination of the
Slonczewski-Weiss-McClure (SWMcC) parameters used to describe the peculiar
electronic structure of trilayer graphene. Moreover, at high magnetic fields,
the degenerate crossing points split into manifolds indicating the existence of
broken-symmetry quantum Hall states.Comment: Supplementary Information at
http://jarilloherrero.mit.edu/wp-content/uploads/2011/04/Supplementary_Taychatanapat.pd
Electronic Spin Transport in Dual-Gated Bilayer Graphene
The elimination of extrinsic sources of spin relaxation is key in realizing
the exceptional intrinsic spin transport performance of graphene. Towards this,
we study charge and spin transport in bilayer graphene-based spin valve devices
fabricated in a new device architecture which allows us to make a comparative
study by separately investigating the roles of substrate and polymer residues
on spin relaxation. First, the comparison between spin valves fabricated on
SiO2 and BN substrates suggests that substrate-related charged impurities,
phonons and roughness do not limit the spin transport in current devices. Next,
the observation of a 5-fold enhancement in spin relaxation time in the
encapsulated device highlights the significance of polymer residues on spin
relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated
bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence
of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin
relaxation time decreases monotonically as carrier concentration increases, and
n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The
sudden increase in the spin relaxation time with no corresponding signature in
the charge transport suggests the presence of a magnetic resonance close to the
charge neutrality point. We also demonstrate, for the first time, spin
transport across bipolar p-n junctions in our dual-gated device architecture
that fully integrates a sequence of encapsulated regions in its design. At low
temperatures, strong suppression of the spin signal was observed while a
transport gap was induced, which is interpreted as a novel manifestation of
impedance mismatch within the spin channel
Microscopic Polarization in Bilayer Graphene
Bilayer graphene has drawn significant attention due to the opening of a band
gap in its low energy electronic spectrum, which offers a promising route to
electronic applications. The gap can be either tunable through an external
electric field or spontaneously formed through an interaction-induced symmetry
breaking. Our scanning tunneling measurements reveal the microscopic nature of
the bilayer gap to be very different from what is observed in previous
macroscopic measurements or expected from current theoretical models. The
potential difference between the layers, which is proportional to charge
imbalance and determines the gap value, shows strong dependence on the disorder
potential, varying spatially in both magnitude and sign on a microscopic level.
Furthermore, the gap does not vanish at small charge densities. Additional
interaction-induced effects are observed in a magnetic field with the opening
of a subgap when the zero orbital Landau level is placed at the Fermi energy
Electrically tunable transverse magnetic focusing in graphene
Author's final manuscript January 9, 2013Electrons in a periodic lattice can propagate without scattering for macroscopic distances despite the presence of the non-uniform Coulomb potential due to the nuclei. Such ballistic motion of electrons allows the use of a transverse magnetic field to focus electrons. This phenomenon, known as transverse magnetic focusing (TMF), has been used to study the Fermi surface of metals and semiconductor heterostructures, as well as to investigate Andreev reflection and spin–orbit interaction, and to detect composite fermions. Here we report on the experimental observation of TMF in high-mobility mono-, bi- and tri-layer graphene devices. The ability to tune the graphene carrier density enables us to investigate TMF continuously from the hole to the electron regime and analyse the resulting focusing fan. Moreover, by applying a transverse electric field to tri-layer graphene, we use TMF as a ballistic electron spectroscopy method to investigate controlled changes in the electronic structure of a material. Finally, we demonstrate that TMF survives in graphene up to 300 K, by far the highest temperature reported for any system, opening the door to new room-temperature applications based on electron-optics.National Science Foundation (U.S.) (CAREER Award DMR-0845287)United States. Office of Naval Research. GATE MURI Projec
Dual-gated bilayer graphene hot electron bolometer
Detection of infrared light is central to diverse applications in security,
medicine, astronomy, materials science, and biology. Often different materials
and detection mechanisms are employed to optimize performance in different
spectral ranges. Graphene is a unique material with strong, nearly
frequency-independent light-matter interaction from far infrared to
ultraviolet, with potential for broadband photonics applications. Moreover,
graphene's small electron-phonon coupling suggests that hot-electron effects
may be exploited at relatively high temperatures for fast and highly sensitive
detectors in which light energy heats only the small-specific-heat electronic
system. Here we demonstrate such a hot-electron bolometer using bilayer
graphene that is dual-gated to create a tunable bandgap and
electron-temperature-dependent conductivity. The measured large electron-phonon
heat resistance is in good agreement with theoretical estimates in magnitude
and temperature dependence, and enables our graphene bolometer operating at a
temperature of 5 K to have a low noise equivalent power (33 fW/Hz1/2). We
employ a pump-probe technique to directly measure the intrinsic speed of our
device, >1 GHz at 10 K.Comment: 5 figure
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