Large Magnetic Susceptibility Anisotropy of Metallic Carbon Nanotubes

Through magnetic linear dichroism spectroscopy, the magnetic susceptibility anisotropy of metallic single-walled carbon nanotubes has been extracted and found to be 2-4 times greater than values for semiconducting single-walled carbon nanotubes. This large anisotropy is consistent with our calculations and can be understood in terms of large orbital paramagnetism of electrons in metallic nanotubes arising from the Aharonov-Bohm-phase-induced gap opening in a parallel field. We also compare our values with previous work for semiconducting nanotubes, which confirm a break from the prediction that the magnetic susceptibility anisotropy increases linearly with the diameter.Comment: 4 pages, 4 figure

Possible Phase Transition Deep Inside the Hidden Order Phase of Ultraclean URu2Si2

To elucidate the underlying nature of the hidden order (HO) state in heavy-fermion compound URu2Si2, we measure electrical transport properties of ultraclean crystals in a high field/low temperature regime. Unlike previous studies, the present system with much less impurity scattering resolves a distinct anomaly of the Hall resistivity at H*=22.5 T well below the destruction field of the HO phase ~36 T. In addition, a novel quantum oscillation appears above a magnetic field slightly below H*. These results indicate an abrupt reconstruction of the Fermi surface, which implies a possible phase transition well within the HO phase caused by a band-dependent destruction of the HO parameter. The present results definitely indicate that the HO transition should be described by an itinerant electron picture.Comment: 4 pages, 4 figures, accepted for publication in Physical Review Letter

Spin-phonon coupled modes in the incommensurate phases of doped CuGeO3_{3}

The doping effect of the folded phonon mode at 98 cm$^{-1}$ was investigated on the Si-doped CuGeO$_3$ by magneto-optical measurements in far-infrared (FIR) region under high magnetic field. The folded phonon mode at 98 cm$^{-1}$ appears not only in the dimerized (D) phase but also in the dimerized-anitiferromagnetic (DAF) phase on the doped CuGeO$_3$. The splitting was observed in the incommensurate (IC) phase and the antiferromagnetically ordered incommensurate (IAF) phase above $H_C$. The split-off branches exhibit different field dependence from that of the pure CuGeO$_3$ in the vicinity of $H_C$, and the discrepancy in the IAF phase is larger than that in the IC phase. It is caused by the interaction between the solitons and the impurities.Comment: 7 pages, 4 figures, resubmitted to Phys. Rev.

Field-Induced Magnetic Ordering in the Quantum Spin System KCuCl3_3

KCuCl$_3$ is a three-dimensional coupled spin-dimer system and has a singlet ground state with an excitation gap ${\Delta}/k_{\rm B}=31$ K. High-field magnetization measurements for KCuCl$_3$ have been performed in static magnetic fields of up to 30 T and in pulsed magnetic fields of up to 60 T. The entire magnetization curve including the saturation region was obtained at $T=1.3$ K. From the analysis of the magnetization curve, it was found that the exchange parameters determined from the dispersion relations of the magnetic excitations should be reduced, which suggests the importance of the renormalization effect in the magnetic excitations. The field-induced magnetic ordering accompanied by the cusplike minimum of the magnetization was observed as in the isomorphous compound TlCuCl$_3$. The phase boundary was almost independent of the field direction, and is represented by the power law. These results are consistent with the magnon Bose-Einstein condensation picture for field-induced magnetic ordering.Comment: 9 pages, 7 figures, 9 eps files, revtex styl

Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies

We have measured the current-voltage (I-V) of type II InAs/GaSb/InAs double heterojunctions (DHETs) with 'GaAs like' interface bonding and GaSb thickness between 0-1200 \AA. A negative differential resistance (NDR) is observed for all DHETs with GaSb thickness $>$ 60 \AA below which a dramatic change in the shape of the I-V and a marked hysteresis is observed. The temperature dependence of the I-V is found to be very strong below this critical GaSb thickness. The I-V characteristics of selected DHETs are also presented under hydrostatic pressures up to 11 kbar. Finally, a mid infra-red electroluminescence is observed at 1 bar with a threshold at the NDR valley bias. The band profile calculations presented in the analysis are markedly different to those given in the literature, and arise due to the positive charge that it is argued will build up in the GaSb layer under bias. We conclude that the dominant conduction mechanism in DHETs is most likely to arise out of an inelastic electron-heavy-hole interaction similar to that observed in single heterojunctions (SHETs) with 'GaAs like' interface bonding, and not out of resonant electron-light-hole tunnelling as proposed by Yu et al. A Zener tunnelling mechanism is shown to contribute to the background current beyond NDR.Comment: 8 pages 12 fig

Far-Infrared Spectroscopy in Spin-Peierls Compound CuGeO_3 under High Magnetic Fields

Polarized far-infrared (FIR) spectroscopic measurements and FIR magneto-optical studies were performed on the inorganic spin-Peierls compound CuGeO_3. An absorption line, which was found at 98 cm$^{-1}$ in the dimerized phase (D phase), was assigned to a folded phonon mode of B$_{3u}$ symmetry. The splitting of the folded mode into two components in the incommensurate phase (IC phase) has been observed for the first time. A new broad absorption centered at 63 cm$^{-1}$ was observed only in the ${\bf E}\parallel b$ axis polarization, which was assigned to a magnetic excitation from singlet ground state to a continuum state.Comment: 9 pages multicolREVTeX, 10 figure

Electron Spin Polarization in Resonant Interband Tunneling Devices

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin polarized electrons injected into bulk InAs make spin resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.Comment: 11 pages, 4 eps figure