2 research outputs found
On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors
In this letter, we describe operation of a radio-frequency superconducting
single electron transistor (RF-SSET) with an on-chip superconducting LC
matching network consisting of a spiral inductor L and its capacitance to
ground. The superconducting network has a lower parasitic capacitance and gives
a better matching for the RF-SSET than does a commercial chip inductor.
Moreover, the superconducting network has negligibly low dissipation, leading
to sensitive response to changes in the RF-SSET impedance. The charge
sensitivity 2.4*10^-6 e/(Hz)^1/2 in the sub-gap region and energy sensitivity
of 1.9 hbar indicate that the RF-SSET is operating in the vicinity of the shot
noise limit.Comment: 3 pages, 3 figures, REVTeX 4. To appear in Appl. Phys. Let
Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
We report a robust process for fabrication of surface-gated Si/SiGe quantum
dots (QDs) with an integrated superconducting single-electron transistor
(S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is
used to reduce gate leakage. After the leakage current is suppressed, Coulomb
oscillations of the QD and the current-voltage characteristics of the S-SET are
observed at a temperature of 0.3 K. Coupling of the S-SET to the QD is
confirmed by using the S-SET to perform sensing of the QD charge state.Comment: 4 pages, 3 figure