3 research outputs found
Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range
We report on a study of the ac conductivity and magneto-optical properties of
metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible
spectrum. Our analysis is based on the successful kinetic exchange model for
(III,Mn)V ferromagnetic semiconductors. We perform the calculations within the
Kubo formalism and treat the disorder effects pertubatively within the Born
approximation, valid for the metallic regime. We consider an eight-band
Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a
ten-band model with additional dispersionless bands simulating
phenomenologically the upper-mid-gap states induced by antisite and
interstitial impurities. These models qualitatively account for
optical-absorption experiments and predict new features in the mid-infrared
Kerr angle and magnetic-circular-dichroism properties as a function of Mn
concentration and free carrier density.Comment: 10 pages, 7 figures, some typos correcte
Two-photon spin injection in semiconductors
A comparison is made between the degree of spin polarization of electrons
excited by one- and two-photon absorption of circularly polarized light in bulk
zincblende semiconductors. Time- and polarization-resolved experiments in
(001)-oriented GaAs reveal an initial degree of spin polarization of 49% for
both one- and two-photon spin injection at wavelengths of 775 and 1550 nm, in
agreement with theory. The macroscopic symmetry and microscopic theory for
two-photon spin injection are reviewed, and the latter is generalized to
account for spin-splitting of the bands. The degree of spin polarization of
one- and two-photon optical orientation need not be equal, as shown by
calculations of spectra for GaAs, InP, GaSb, InSb, and ZnSe using a 14x14 k.p
Hamiltonian including remote band effects. By including the higher conduction
bands in the calculation, cubic anisotropy and the role of allowed-allowed
transitions can be investigated. The allowed-allowed transitions do not
conserve angular momentum and can cause a high degree of spin polarization
close to the band edge; a value of 78% is calculated in GaSb, but by varying
the material parameters it could be as high as 100%. The selection rules for
spin injection from allowed-allowed transitions are presented, and interband
spin-orbit coupling is found to play an important role.Comment: 12 pages including 7 figure
Electron Spin Polarization in Resonant Interband Tunneling Devices
We study spin-dependent interband resonant tunneling in double-barrier
InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be
used as spin filters utilizing spin-selective tunneling of electrons through
the light-hole resonant channel. High densities of the spin polarized electrons
injected into bulk InAs make spin resonant tunneling devices a viable
alternative for injecting spins into a semiconductor. Another striking feature
of the proposed devices is the possibility of inducing additional resonant
channels corresponding to the heavy holes. This can be implemented by
saturating the in-plane magnetization in the quantum well.Comment: 11 pages, 4 eps figure