Dispersion and fidelity in quantum interferometry

We consider Mach-Zehnder and Hong-Ou-Mandel interferometers with nonclassical states of light as input, and study the effect that dispersion inside the interferometer has on the sensitivity of phase measurements. We study in detail a number of different one- and two-photon input states, including Fock, dual Fock, N00N states, and photon pairs from parametric downconversion. Assuming there is a phase shift $\phi_0$ in one arm of the interferometer, we compute the probabilities of measurement outcomes as a function of $\phi_0$, and then compute the Shannon mutual information between $\phi_0$ and the measurements. This provides a means of quantitatively comparing the utility of various input states for determining the phase in the presence of dispersion. In addition, we consider a simplified model of parametric downconversion for which probabilities can be explicitly computed analytically, and which serves as a limiting case of the more realistic downconversion model.Comment: 12 pages, 14 figures. Submitted to Physical Review

Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations

The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a larger number of excited states than the other approximations.Comment: 8 pages, 7 figures, revtex, eps

Absence of correlation between built-in electric dipole moment and quantum Stark effect in InAs/GaAs self-assembled quantum dots

We report significant deviations from the usual quadratic dependence of the ground state interband transition energy on applied electric fields in InAs/GaAs self-assembled quantum dots. In particular, we show that conventional second-order perturbation theory fails to correctly describe the Stark shift for electric field below $F = 10$ kV/cm in high dots. Eight-band ${\bf k}\cdot{\bf p}$ calculations demonstrate this effect is predominantly due to the three-dimensional strain field distribution which for various dot shapes and stoichiometric compositions drastically affects the hole ground state. Our conclusions are supported by two independent experiments.Comment: 4 pages, 4 figure

Fidelity of Quantum Interferometers

For a generic interferometer, the conditional probability density distribution, $p(\phi|m)$, for the phase $\phi$ given measurement outcome $m$, will generally have multiple peaks. Therefore, the phase sensitivity of an interferometer cannot be adequately characterized by the standard deviation, such as $\Delta\phi\sim 1/\sqrt{N}$ (the standard limit), or $\Delta\phi\sim 1/N$ (the Heisenberg limit). We propose an alternative measure of phase sensitivity--the fidelity of an interferometer--defined as the Shannon mutual information between the phase shift $\phi$\ and the measurement outcomes $m$. As an example application of interferometer fidelity, we consider a generic optical Mach-Zehnder interferometer, used as a sensor of a classical field. We find the surprising result that an entangled {\it N00N} state input leads to a lower fidelity than a Fock state input, for the same photon number.Comment: 4 pages, 3 figure

Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent ${\bf k}\cdot{\bf p}$ Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.Comment: 4 pages, 4 figure

Effects of Next-Nearest-Neighbor Repulsion on One-Dimensional Quarter-Filled Electron Systems

We examine effects of the next-nearest-neighbor repulsion on electronic states of a one-dimensional interacting electron system which consists of quarter-filled band and interactions of on-site and nearest-neighbor repulsion. We derive the effective Hamiltonian for the electrons around wave number \pm \kf (\kf: Fermi wave number) and apply the renormalization group method to the bosonized Hamiltonian. It is shown that the next-nearest-neighbor repulsion makes 4\kf-charge ordering unstable and suppresses the spin fluctuation. Further the excitation gaps and spin susceptibility are also evaluated.Comment: 19 pages, 8 figures, submitted to J. Phys. Soc. Jp

Electronic structure of strained InP/GaInP quantum dots

We calculate the electronic structure of nm scale InP islands embedded in $Ga_{0.51}In_{0.49}P$. The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for both types of hole states.Comment: Typographical error corrected in strain Hamiltonia

Energy levels in polarization superlattices: a comparison of continuum strain models

A theoretical model for the energy levels in polarization superlattices is presented. The model includes the effect of strain on the local polarization-induced electric fields and the subsequent effect on the energy levels. Two continuum strain models are contrasted. One is the standard strain model derived from Hooke's law that is typically used to calculate energy levels in polarization superlattices and quantum wells. The other is a fully-coupled strain model derived from the thermodynamic equation of state for piezoelectric materials. The latter is more complete and applicable to strongly piezoelectric materials where corrections to the standard model are significant. The underlying theory has been applied to AlGaN/GaN superlattices and quantum wells. It is found that the fully-coupled strain model yields very different electric fields from the standard model. The calculated intersubband transition energies are shifted by approximately 5 -- 19 meV, depending on the structure. Thus from a device standpoint, the effect of applying the fully-coupled model produces a very measurable shift in the peak wavelength. This result has implications for the design of AlGaN/GaN optical switches.Comment: Revtex

Confinement of Interchain Hopping by Umklapp Scattering in Two-Coupled Chains

The effect of umklapp scattering on interchain hopping has been investigated for two-coupled chains of interacting electrons with half-filled band. By analyzing in terms of renormalization group method, we have found that interchain hopping is renormalized to zero and is confined when a gap induced by umklapp scattering becomes larger than a critical value. From a phase diagram calculated on a plane of the interchain hopping and the gap, we discuss a role of the correlation gap which has been studied in metallic state at temperatures above spin density wave state in organic conductors.Comment: 5 pages, 3 figure

Confinement-deconfinement transition in two-coupled chains with umklapp scattering

A role of umklapp scattering has been examined for two-coupled chains with both forward and backward scatterings by applying renormalization group method to bosonized Hamiltonian. It has been found that a state with relevant interchain hopping changes into a state with irrelevant (confined) one when the magnitude of umklapp scattering becomes larger than that of interchain hopping. Critical value of umklapp scattering for such a confinement-deconfinement transition is calculated as the function of interchain hopping and intrachain interactions. A crossover from one-dimensional regime into that of coupled chains is also shown with decreasing temperature.Comment: 13 pages, 7 figures, to be published in Phys. Rev.