Steady-state photomodulation spectroscopy of a-Si:HI a-SiNx:H multilayer structures

The steady-state photomodulation (PM) spectrum and its temperature dependence were studied in a-Si:H/a-SiNx:H multilayer structures (MLS). We found that the photocarrier properties in MLS with Si sub layer thickness ds < 20 A are dominated by band-tail broadening resulting from increase in disorder. The PM spectrum for MLS with ds > 20 A is mainly due to interfacerelated defects; because of its similarity with the PM spectrum of P-doped a-Si:H we identify the defects as charged dangling bonds

High-Pressure Amorphous Nitrogen

The phase diagram and stability limits of diatomic solid nitrogen have been explored in a wide pressure--temperature range by several optical spectroscopic techniques. A newly characterized narrow-gap semiconducting phase $\eta$ has been found to exist in a range of 80--270 GPa and 10--510 K. The vibrational and optical properties of the $\eta$ phase produced under these conditions indicate that it is largely amorphous and back transforms to a new molecular phase. The band gap of the $\eta$ phase is found to decrease with pressure indicating possible metallization by band overlap above 280 GPa.Comment: 5 pages, 4 figure

Beitrag zum Problem der heterosynaptischen Facilitation in Aplysia californica

1. Heterosynaptic facilitation (H.S.F.) of single neurons in the central nervous system of Aplysia can be repeated virtually indefinitely, provided sufficient time is allowed for recovery between the trials.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/47439/1/424_2004_Article_BF00362956.pd

Comparative study of the structural and optical properties of epitaxial CuFeO2 and CuFe1−xGaxO2 delafossite thin films grown by pulsed laser deposition methods

This paper was accepted for publication in the journal Thin Solid Films and the definitive published version is available at http://dx.doi.org/10.1016/j.tsf.2017.02.005Three samples of epitaxial delafossite CuFeO2 and CuFe1 − xGaxO2 films were grown using Pulsed Laser Deposition techniques in high vacuum. The sample thicknesses were estimated to be 21 nm, 75 nm for the CuFeO2 films and ~ 37 nm for the composite sample containing gallium. The estimated gallium fraction of substituted ferric atoms was x = 0.25 for the composite sample. We present the study of the fundamental band gap(s) for each sample via observation of their respective optical absorption properties in the NIR-VIS region using transmittance and diffuse reflection spectroscopy. Predominant absorption edges measured at 1.1 eV and 2.1 eV from transmittance spectra were observed for the CuFeO2 samples. The sample of CuFe1 − xGaxO2 showed a measurable shift to 1.5 eV of the lower band-gap and a strong absorption edge located at 2.3 eV attributed to direct band to band transitions. This study also found evidence of changes between apparent absorption edges between transmittance and diffuse reflectance spectroscopies of each sample and it may be resultant from absorption channels via surface states

MgyNi1-y(Hx) thin films deposited by magnetron co-sputtering

In this work we have synthesised thin films of MgyNi1-y(Hx) metal and metal hydride with y between 0 and 1. The films are deposited by magnetron co-sputtering of metallic targets of Mg and Ni. Metallic MgyNi1-y films were deposited with pure Ar plasma while MgyNi1-yHx hydride films were deposited reactively with 30% H2 in the Ar plasma. The depositions were done with a fixed substrate carrier, producing films with a spatial gradient in the Mg and Ni composition. The combinatorial method of co-sputtering gives an insight into the phase diagram of MgyNi1-y and MgyNi1-yHx, and allows us to investigate structural, optical and electrical properties of the resulting alloys. Our results show that reactive sputtering gives direct deposition of metal hydride films, with high purity in the case of Mg~2NiH~4. We have observed limited oxidation after several months of exposure to ambient conditions. MgyNi1-y and MgyNi1-yHx films might be applied for optical control in smart windows, optical sensors and as a semiconducting material for photovoltaic solar cells

Optical properties of MgH2 measured in situ in a novel gas cell for ellipsometry/spectrophotometry

The dielectric properties of alpha-MgH2 are investigated in the photon energy range between 1 and 6.5 eV. For this purpose, a novel sample configuration and experimental setup are developed that allow both optical transmission and ellipsometric measurements of a transparent thin film in equilibrium with hydrogen. We show that alpha-MgH2 is a transparent, colour neutral insulator with a band gap of 5.6 +/- 0.1 eV. It has an intrinsic transparency of about 80% over the whole visible spectrum. The dielectric function found in this work confirms very recent band structure calculations using the GW approximation by Alford and Chou [J.A. Alford and M.Y. Chou (unpublished)]. As Pd is used as a cap layer we report also the optical properties of PdHx thin films.Comment: REVTeX4, 15 pages, 12 figures, 5 table

Intense violet–blue emission and paramagnetism of nanocrystalline Gd3+ doped ZnO ceramics

Nanocrystalline Zn1-xGdxO (x = 0, 0.02, 0.04, 0.06, and 0.08) ceramics were synthesized by ball milling and subsequent solid-state reaction. The transmission electron microscopy (TEM) micrograph of as synthesized samples revealed the formation of crystallites with an average diameter of 60 nm, and the selected area electron diffraction (SAED) pattern confirmed the formation of wurtzite structure. A red shift in the band gap was observed with increasing Gd3+ concentration. The photoluminescence of nanocrystalline Gd3+ doped ZnO exhibited a strong violet–blue emission. Concentration dependence of the emission intensity of Gd3+ in ZnO was studied, and the critical concentration was found to be 4 mol% of Gd3+. The Gd3+ doped ZnO exhibited paramagnetic behavior at room temperature, and the magnetic moment increased with Gd3+ concentration

Energy band diagram of device-grade silicon nanocrystals

This work was supported by the EPSRC (EP/K022237/1) and the Leverhulme International Network (IN-2012-136). SA would like to acknowledge the support of the Ulster University Vice-Chancellor's Research Studentship and CR that of the NI-DEL studentship.Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.Publisher PDFPeer reviewe

Intrinsic Doping in Electrodeposited ZnS Thin Films for Application in Large-Area Optoelectronic Devices

Zinc sulphide (ZnS) thin films with both n- and p-type electrical conductivity were grown on glass/fluorine-doped tin oxide-conducting substrates from acidic and aqueous solution containing ZnSO4 and (NH4)2S2O3 by simply changing the deposition potential in a two-electrode cell configuration. After deposition, the films were characterised using various analytical techniques. X-ray diffraction analysis reveals that the materials are amorphous even after heat treatment. Optical properties (transmittance, absorbance and optical bandgap) of the films were studied. The bandgaps of the films were found to be in the range (3.68–3.86) eV depending on the growth voltage. Photoelectrochemical cell measurements show both n- and p-type electrical conductivity for the films depending on the growth voltage. Scanning electron microscopy shows material clusters on the surface with no significant change after heat treatment at different temperatures. Atomic force microscopy shows that the surface roughness of these materials remain fairly constant reducing only from 18 nm to 17 nm after heat treatment. Thickness estimation of the films was also carried out using theoretical and experimental methods. Direct current conductivity measurements on both as-deposited and annealed films show that resistivity increased after heat treatment

Hydrogen-doped Brookite TiO2 Nanobullets Array as a Novel Photoanode for Efficient Solar Water Splitting

As a representative photocatalyst for photoelectrochemical solar water splitting, TiO2 has been intensively studied but most researches have focused on the rutile and anatsase phases because brookite, another important crystalline polymorph of TiO2, rarely exists in nature and is difficult to synthesize. In this work, hydrogen doped brookite (H:brookite) nanobullet arrays were synthesized via a well-designed solution reaction for the first time. H:brookite shows highly improved PEC properties with excellent stability, enhanced photocurrent, and significantly high Faradaic efficiency for overall solar water splitting. To support the experimental data, ab initio density functional theory calculations were also conducted. At the interstitial doping site that has minimum formation energy, the hydrogen atoms act as shallow donors and exist as H+. which has the minimum formation energy among three states of hydrogen (H+. H0, and H-). The calculated density of states of H:brookite shows a narrowed bandgap and an increased electron density compared to the pristine brookite. The combined experimental and theoretical results provide frameworks for the exploration of the PEC properties of doped brookite and extend our knowledge regarding the undiscovered properties of brookite of TiO2.ope