844 research outputs found
Hall effect of quasi-hole gas in organic single-crystal transistors
Hall effect is detected in organic field-effect transistors, using
appropriately shaped rubrene (C42H28) single crystals. It turned out that
inverse Hall coefficient, having a positive sign, is close to the amount of
electric-field induced charge upon the hole accumulation. The presence of the
normal Hall effect means that the electromagnetic character of the surface
charge is not of hopping carriers but resembles that of a two-dimensional
hole-gas system
Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities
We calculate the intersubband absorption linewidth in quantum wells (QWs) due
to scattering by interface roughness, LO phonons, LA phonons, alloy disorder,
and ionized impurities, and compare it with the transport energy broadening
that corresponds to the transport relaxation time related to electron mobility.
Numerical calculations for GaAs QWs clarify the different contributions of each
individual scattering mechanism to absorption linewidth and transport
broadening. Interface roughness scattering contributes about an order of
magnitude more to linewidth than to transport broadening, because the
contribution from the intrasubband scattering in the first excited subband is
much larger than that in the ground subband. On the other hand, LO phonon
scattering (at room temperature) and ionized impurity scattering contribute
much less to linewidth than to transport broadening. LA phonon scattering makes
comparable contributions to linewidth and transport broadening, and so does
alloy disorder scattering. The combination of these contributions with
significantly different characteristics makes the absolute values of linewidth
and transport broadening very different, and leads to the apparent lack of
correlation between them when a parameter, such as temperature or alloy
composition, is changed. Our numerical calculations can quantitatively explain
the previously reported experimental results.Comment: 17 pages, including 15 figure
Superconducting Properties of MgB2 Bulk Materials Prepared by High Pressure Sintering
High-density bulk materials of a newly discovered 40K intermetallic MgB2
superconductor were prepared by high pressure sintering. Superconducting
transition with the onset temperature of 39K was confirmed by both magnetic and
resistive measurements. Magnetization versus field (M-H) curve shows the
behavior of a typical Type II superconductor and the lower critical field
Hc1(0) estimated from M-H curve is 0.032T. The bulk sample shows good
connection between grains and critical current density Jc estimated from the
magnetization hysteresis using sample size was 2x104A/cm2 at 20K and 1T. Upper
critical field Hc2(0) determined by extrapolating the onset of resistive
transition and assuming a dirty limit is 18T.Comment: 3Pages PD
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