Long-Term Outcomes with Subcutaneous C1-Inhibitor Replacement Therapy for Prevention of Hereditary Angioedema Attacks

Background For the prevention of attacks of hereditary angioedema (HAE), the efficacy and safety of subcutaneous human C1-esterase inhibitor (C1-INH[SC]; HAEGARDA, CSL Behring) was established in the 16-week Clinical Study for Optimal Management of Preventing Angioedema with Low-Volume Subcutaneous C1-Inhibitor Replacement Therapy (COMPACT). Objective To assess the long-term safety, occurrence of angioedema attacks, and use of rescue medication with C1-INH(SC). Methods Open-label, randomized, parallel-arm extension of COMPACT across 11 countries. Patients with frequent angioedema attacks, either study treatment-naive or who had completed COMPACT, were randomly assigned (1:1) to 40 IU/kg or 60 IU/kg C1-INH(SC) twice per week, with conditional uptitration to optimize prophylaxis (ClinicalTrials.gov registration no. NCT02316353). Results A total of 126 patients with a monthly attack rate of 4.3 in 3 months before entry in COMPACT were enrolled and treated for a mean of 1.5 years; 44 patients (34.9%) had more than 2 years of exposure. Mean steady-state C1-INH functional activity increased to 66.6% with 60 IU/kg. Incidence of adverse events was low and similar in both dose groups (11.3 and 8.5 events per patient-year for 40 IU/kg and 60 IU/kg, respectively). For 40 IU/kg and 60 IU/kg, median annualized attack rates were 1.3 and 1.0, respectively, and median rescue medication use was 0.2 and 0.0 times per year, respectively. Of 23 patients receiving 60 IU/kg for more than 2 years, 19 (83%) were attack-free during months 25 to 30 of treatment. Conclusions In patients with frequent HAE attacks, long-term replacement therapy with C1-INH(SC) is safe and exhibits a substantial and sustained prophylactic effect, with the vast majority of patients becoming free from debilitating disease symptoms

Photoconductivity in Si SiO2 single quantum wells and quantum dot layers

Si SiO2 single quantum wells and quantum dot layers were prepared under ultrahigh vacuum conditions and studied with respect to possible photovoltaic applications. The detection of a photocurrent in such structures is demonstrated. Its spectral dependence correlates with the respective structural properties. Internal quantum efficiencies of photoconductivity and, thus, carrier mobilities and lifetimes, are strongly affected by Si SiO2 interface states and were enhanced upon hydrogen treatment due to passivation of interface gap state

Si SiO2 quantum well and quantum dot structures atomic scale preparation and characterization with respect to photovoltaic application

Si SiO2 single quantum wells and quantum dot layers were prepared under ultrahigh vacuum conditions in order to study their structural, chemical and photo electrical properties with respect to a possible application in photovoltaic devices. Particular focus is put on the realization of well defined and abrupt interfaces with low densities of interface gap states. The detection of a photocurrent in these quantum structures is demonstrated. Its spectral dependence correlates with the respective structural properties. Internal quantum efficiencies of photoconductivity and, thus, carrier mobility lifetime products are strongly affected by Si SiO2 interface states and were significantly enhanced upon hydrogen treatment due to passivation of interface gap state

Hydrogen passivation of interfacial gap state defects at UHV prepared ultrathin SiO2 layers on Si 111 , Si 110 , and Si 100

A complete in situ process from preparation and hydrogen passivation to interface gap state analysis by near UV photoelectron spectroscopy NUV PES without breaking ultrahigh vacuum UHV conditions is applied to ultrathin oxide layers on Si 111 , 110 , and 100 . RF plasma oxidation with thermalized neutral oxygen atoms allows the growth of homogeneous ultrathin SiO2 layers lt; 2 nm and the preparation of compositionally and structurally abrupt Si SiO2 interfaces with minimal amounts of suboxides ranging from 2 on Si 100 to 4 on Si 110 . The oxide growth is independent of the crystallographic orientation. Appropriate plasma treatment with nearly thermalized hydrogen atoms Ekin lt; 1 eV leads to significant passivation of dangling bonds at the ultrathin SiO2 Si interfaces and is most efficient on Si 100 . In contrast, energetic hydrogen plasma treatment of these interfaces with kinetic energies exceeding 120 eV, which is conventionally applied for polycrystalline Si thin film solar cells, imparts large amounts of energy and deteriorates the electrical properties as is reflected in interface degradation and increased densities of defect state

Si SiO2 quantum well structures preparation and characterization

Bandgap control of silicon based material provides a promising way towards 3rd generation photovoltaic devices such as tandem solar cells. It has been recognized that such bandgap control can be achieved by silicon nanostructures consisting of quantum layer superlattices. In the present study, Si SiO2 single and multi quantum well structures were fabricated under ultrahigh vacuum UHV conditions by thermal deposition of ultrathin amorphous silicon layers on Suprasil wafers and subsequent oxidation with an RF plasma source. It is shown that appropriate plasma assisted oxidation at substrate tempertures of 600 C results in nearly abrupt Si SiO2 interfaces and prevents suboxide species. Upon annealing up to 1000 C Si quantum layers exhibit good crystallinity, as is revealed by electron diffraction RHEED and Raman scattering data. Optical measurements indicate quantum confinement properties as evidenced by blue shift of the band gap with decreasing Si layer thickness. Current voltage and photoconductivity measurements are utilized to analyse the electrical properties of the structures and to deduce internal quantum efficiencies