Large spin-orbit splitting and weakly-anisotropic superconductivity revealed with single-crystalline noncentrosymmetric CaIrSi3

We report normal and superconducting properties of the Rashba-type noncentrosymmetric com- pound CaIrSi3, using single crystalline samples with nearly 100% superconducting volume fraction. The electronic density of states revealed by the hard x-ray photoemission spectroscopy can be well explained by the relativistic first-principle band calculation. This indicates that strong spin-orbit interaction indeed affects the electronic states of this compound. The obtained H - T phase diagram exhibits only approximately 10% anisotropy, indicating that the superconducting properties are almost three dimensional. Nevertheless, strongly anisotropic vortex pinning is observed.Comment: 8 pages, 6 figures, 1 table, accepted for publication in Phys. Rev.

Entropy change at the martensitic transformation in ferromagnetic shape memory alloys Ni_{2+x}Mn_{1-x}Ga

The entropy change $\Delta S$ between the high-temperature cubic phase and the low-temperature tetragonally-based martensitic phase of Ni$_{2+x}$Mn$_{1-x}$Ga ($x = 0 - 0.20$) alloys was studied. The experimental results obtained indicate that $\Delta S$ in the Ni$_{2+x}$Mn$_{1-x}$Ga alloys increases with the Ni excess $x$. The increase of $\Delta S$ is presumably accounted for by an increase of magnetic contribution to the entropy change. It is suggested that the change in modulation of the martensitic phase of Ni$_{2+x}$Mn$_{1-x}$Ga results in discontinuity of the composition dependence of $\Delta S$.Comment: presented at MMM-47, to be published in J. Appl. Phys. (May 15, 2003

Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that by the gap dependence of non-local signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major source of temperature dependence of non-local signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.Comment: 12 pages, 4 figure, To appear in Applied Physics Letters