Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Finite-Element Limit Analysis of the Tucker High School Gymnasium Roof Failure

The Randolph Tucker High School gymnasium roof failure of 1970 has received much scholarly attention. This study will provide a conclusion to a large body of previously published works by means of limit state analysis of the roof failure using state of the art parametric finite-element modeling. Parametric modeling within a general purpose finite-element analysis program allows for extremely rapid changes to the model because key terms are objects or parameters that can be adjusted internally by the program, rather than laboriously entered by the user. The failure of the roof was investigated by means of a limit state analysis, which accurately captured the cracking of the concrete and the yielding of the reinforcing steel. Concrete creep and shrinkage and relaxation of the prestressing steel were also accounted for. Finally, the authors also studied the idea that camber in the roof geometry might have prevented collapse

Stabilizing the surface morphology of Si1–x–yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source

Si1–x–yGexCy/Si superlattices were grown by solid-source molecular beam epitaxy using silicon carbide as a source of C. Samples consisting of alternating layers of nominally 25 nm Si1–x–yGexCy and 35 nm Si for 10 periods were characterized by high-resolution x-ray diffraction, transmission electron microscopy (TEM), and Rutherford backscattering spectrometry to determine strain, thickness, and composition. C resonance backscattering and secondary ion mass spectrometries were used to measure the total C concentration in the Si1–x–yGexCy layers, allowing for an accurate determination of the substitutional C fraction to be made as a function of growth rate for fixed Ge and substitutional C compositions. For C concentrations close to 1%, high-quality layers were obtained without the use of Sb-surfactant mediation. These samples were found to be structurally perfect to a level consistent with cross-sectional TEM (< 10^7 defects/cm^2) and showed considerably improved homogeneity as compared with similar structures grown using graphite as the source for C. For higher Ge and C concentrations, Sb-surfactant mediation was found to be required to stabilize the surface morphology. The maximum value of substitutional C concentration, above which excessive generation of stacking fault defects caused polycrystalline and/or amorphous growth, was found to be approximately 2.4% in samples containing between 25 and 30% Ge. The fraction of substitutional C was found to decrease from roughly 60% by a factor of 0.86 as the Si1–x–yGexCy growth rate increased from 0.1 to 1.0 nm/s

The confined-deconfined interface tension, wetting, and the spectrum of the transfer matrix

The reduced tension $\sigma_{cd}$ of the interface between the confined and the deconfined phase of $SU(3)$ pure gauge theory is determined from numerical simulations of the first transfer matrix eigenvalues. At $T_c = 1/L_t$ we find $\sigma_{cd} = 0.139(4) T_c^2$ for $L_t = 2$. The interfaces show universal behavior because the deconfined-deconfined interfaces are completely wet by the confined phase. The critical exponents of complete wetting follow from the analytic interface solutions of a $\Z(3)$-symmetric $\Phi^4$ model in three dimensions. We find numerical evidence that the confined-deconfined interface is rough.Comment: Talk presented at the International Conference on Lattice Field Theory, Lattice 92, to be published in the proceedings, 4 pages, 4 figures, figures 2,3,4 appended as postscript files, figure 1 not available as a postscript file but identical with figure 2 of Nucl. Phys. B372 (1992) 703, special style file espcrc2.sty required (available from hep-lat), BUTP-92/4

On the Use of Ly-alpha Emitters as Probes of Reionization

We use numerical simulations to study the effects of the patchiness of a partly reionized intergalactic medium (IGM) on the observability of Ly-alpha emitters (LAEs) at high redshifts (z ~ 6). We present a new model that divides the Ly-alpha radiative transfer into a (circum-)galactic and an extragalactic (IGM) part, and investigate how the choice of intrinsic line model affects the IGM transmission results. We use our model to study the impact of neutral hydrogen on statistical observables such as the Ly-alpha restframe equivalent width (REW) distribution, the LAE luminosity function and the two-point correlation function. We find that if the observed changes in LAE luminosity functions and equivalent width distributions between z ~ 6 and z ~ 7 are to be explained by an increased IGM neutral fraction alone, we require an extremely late and rapid reionization scenario, where the Universe was ~ 40 % ionized at z = 7, ~ 50 % ionized at z = 6.5 and ~ 100 % ionized at z = 6. This is in conflict with other observations, suggesting that intrinsic LAE evolution at z > 6 cannot be completely neglected. We show how the two-point correlation function can provide more robust constraints once future observations obtain larger LAE samples, and provide predictions for the sample sizes needed to tell different reionization scenarios apart.Comment: Accepted for publication in MNRA

A Multicanonical Algorithm and the Surface Free Energy in SU(3) Pure Gauge Theory

We present a multicanonical algorithm for the SU(3) pure gauge theory at the deconfinement phase transition. We measure the tunneling times for lattices of size L^3x2 for L=8,10, and 12. In contrast to the canonical algorithm the tunneling time increases only moderately with L. Finally, we determine the interfacial free energy applying the multicanonical algorithm.Comment: 6 pages, HLRZ-92-3

The Interface Tension in Quenched QCD at the Critical Temperature

We present results for the confinement-deconfinement interface tension $\alpha_{cd}$ of quenched QCD. They were obtained by applying Binder's histogram method to lattices of size $L^2\times L_z\times L_t$ for $L_t=2$ and L=8,10,12\mbox{ and }14 with $L_z=30$ for $L=8$ and $L_z=3L$ otherwise. The use of a multicanonical algorithm and cylindrical geometries have turned out to be crucial for the numerical studies.Comment: (talk presented by B. Grossmann at Lattice 92), 4 pages with 5 figure appended as encapsulated postscript files at the end, preprint HLRZ-92-7