85 research outputs found

    A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances

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    As a novel function of ferromagnet (FM)/spacer/FM junctions, we theoretically investigate multiple-valued (or multi-level) cell property, which is in principle realized by sensing conductances of four states recorded with magnetization configurations of two FMs; (up,up), (up,down), (down,up), (down,down). In order to sense all the states, 4-valued conductances corresponding to the respective states are necessary. We previously proposed that 4-valued conductances are obtained in FM1/spin-polarized spacer (SPS)/FM2 junctions, where FM1 and FM2 have different spin polarizations, and the spacer depends on spin [J. Phys.: Condens. Matter 15, 8797 (2003)]. In this paper, an ideal SPS is considered as a single-wall armchair carbon nanotube encapsulating magnetic atoms, where the nanotube shows on-resonance or off-resonance at the Fermi level according to its length. The magnitude of the obtained 4-valued conductances has an opposite order between the on-resonant nanotube and the off-resonant one, and this property can be understood by considering electronic states of the nanotube. Also, the magnetoresistance ratio between (up,up) and (down,down) can be larger than the conventional one between parallel and anti-parallel configurations.Comment: 10 pages, 4 figures, accepted for publication in J. Phys.: Condens. Matte

    A theoretical investigation of ferromagnetic tunnel junctions with 4-valued conductances

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    In considering a novel function in ferromagnetic tunnel junctions consisting of ferromagnet(FM)/barrier/FM junctions, we theoretically investigate multiple valued (or multi-level) cell property, which is in principle realized by sensing conductances of four states recorded with magnetization configurations of two FMs; that is, (up,up), (up,down), (down,up), (down,down). To obtain such 4-valued conductances, we propose FM1/spin-polarized barrier/FM2 junctions, where the FM1 and FM2 are different ferromagnets, and the barrier has spin dependence. The proposed idea is applied to the case of the barrier having localized spins. Assuming that all the localized spins are pinned parallel to magnetization axes of the FM1 and FM2, 4-valued conductances are explicitly obtained for the case of many localized spins. Furthermore, objectives for an ideal spin-polarized barrier are discussed.Comment: 9 pages, 3 figures, accepted for publication in J. Phys.: Condens. Matte

    Noncommutative Quantum Mechanics and Seiberg-Witten Map

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    In order to overcome ambiguity problem on identification of mathematical objects in noncommutative theory with physical observables, quantum mechanical system coupled to the NC U(1) gauge field in the noncommutative space is reformulated by making use of the unitarized Seiberg-Witten map, and applied to the Aharonov-Bohm and Hall effects of the NC U(1) gauge field. Retaining terms only up to linear order in the NC parameter \theta, we find that the AB topological phase and the Hall conductivity have both the same formulas as those of the ordinary commutative space with no \theta-dependence.Comment: 7 pages, no figures, uses revtex4; 8 pages, conclusion changed, Appendix adde

    Spin-Atomic Vibration Interaction and Spin-Flip Hamiltonian of a Single Atomic Spin in a Crystal Field

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    We derive the spin-atomic vibration interaction VSAV_{\rm SA} and the spin-flip Hamiltonian VSFV_{\rm SF} of a single atomic spin in a crystal field. We here apply the perturbation theory to a model with the spin-orbit interaction and the kinetic and potential energies of electrons. The model also takes into account the difference in vibration displacement between an effective nucleus and electrons, \Delta {{\boldmath r}}. Examining the coefficients of VSAV_{\rm SA} and VSFV_{\rm SF}, we first show that VSAV_{\rm SA} appears for \Delta {{\boldmath r}}\ne0, while VSFV_{\rm SF} is present independently of \Delta {{\boldmath r}}. As an application, we next obtain VSAV_{\rm SA} and VSFV_{\rm SF} of an Fe ion in a crystal field of tetragonal symmetry. It is found that the magnitudes of the coefficients of VSAV_{\rm SA} can be larger than those of the conventional spin-phonon interaction depending on vibration frequency. In addition, transition probabilities per unit time due to VSAV_{\rm SA} and VSFV_{\rm SF} are investigated for the Fe ion with an anisotropy energy of DSZ2-|D|S_Z^2, where DD is an anisotropy constant and SZS_Z is the ZZ component of a spin operator.Comment: 55 pages, 17 figures, to be published in J. Phys. Soc. Jpn. 79 (2010) No. 11, typos correcte

    Submillimeter Wave ESR Study of Spin Gap Excitations in CuGeO3

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    Transitions between the ground singlet state to the excited triplet state has been observed in CuGeO3 by means of submillimeter wave electron spin resonance. The strong absorption intensity shows the break down of the selection rule. The energy gap at zero field is evaluated to be 570 GHz(2.36 meV) and this value is nearly identical to the gap at the zone center observed by inelastic neutron scattering. The absorption intensity shows strong field orientation dependence but shows no significant dependence on magnetic field intensity. These features have been explained by considering the existence of Dzyaloshinsky-Moriya (DM) antisymmetric exchange interaction. The doping effect on this singlet-triplet excitation has been also studied. A drastic broadening of the absorption line is observed by the doping of only 0.5 % of Si.Comment: 6 pages, 8figures submitted to J. Phys. Soc. Jp

    The Noncommutative Harmonic Oscillator based in Simplectic Representation of Galilei Group

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    In this work we study symplectic unitary representations for the Galilei group. As a consequence the Schr\"odinger equation is derived in phase space. The formalism is based on the non-commutative structure of the star-product, and using the group theory approach as a guide a physical consistent theory in phase space is constructed. The state is described by a quasi-probability amplitude that is in association with the Wigner function. The 3D harmonic oscillator and the noncommutative oscillator are studied in phase space as an application, and the Wigner function associated to both cases are determined.Comment: 7 pages,no figure

    Far-Infrared Spectroscopy in Spin-Peierls Compound CuGeO_3 under High Magnetic Fields

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    Polarized far-infrared (FIR) spectroscopic measurements and FIR magneto-optical studies were performed on the inorganic spin-Peierls compound CuGeO_3. An absorption line, which was found at 98 cm1^{-1} in the dimerized phase (D phase), was assigned to a folded phonon mode of B3u_{3u} symmetry. The splitting of the folded mode into two components in the incommensurate phase (IC phase) has been observed for the first time. A new broad absorption centered at 63 cm1^{-1} was observed only in the Eb{\bf E}\parallel b axis polarization, which was assigned to a magnetic excitation from singlet ground state to a continuum state.Comment: 9 pages multicolREVTeX, 10 figure

    Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis

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    We theoretically analyze the anisotropic magnetoresistance (AMR) effects of bcc Fe (+), fcc Co (+), fcc Ni (+), Fe4_4N (-), and a half-metallic ferromagnet (-). The sign in each ( ) represents the sign of the AMR ratio observed experimentally. We here use the two-current model for a system consisting of a spin-polarized conduction state and localized d states with spin--orbit interaction. From the model, we first derive a general expression of the AMR ratio. The expression consists of a resistivity of the conduction state of the σ\sigma spin (σ=\sigma=\uparrow or \downarrow), ρsσ\rho_{s \sigma}, and resistivities due to s--d scattering processes from the conduction state to the localized d states. On the basis of this expression, we next find a relation between the sign of the AMR ratio and the s--d scattering process. In addition, we obtain expressions of the AMR ratios appropriate to the respective materials. Using the expressions, we evaluate their AMR ratios, where the expressions take into account the values of ρs/ρs\rho_{s \downarrow}/\rho_{s \uparrow} of the respective materials. The evaluated AMR ratios correspond well to the experimental results.Comment: 17 pages, 12 figures, to be published in J. Phys. Soc. Jpn, minor mistakes corrected, final versio
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