Registration of terahertz irradiation with silicon carbide nanostructures

The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the frameworks of proposed model based on the quantum Faraday effect the incident radiation results in the appearance of a generated current in the edge channels with a change in the number of magnetic flux quanta and in the appearance of features in the kinetic dependence of the longitudinal voltage. The generation of intrinsic terahertz irradiation inside the silicon carbide nanostructures is also revealed by the electrically-detected electron paramagnetic resonance (EDEPR) measured the longitudinal voltage as a function of the magnetic field value.Comment: 11 pages, 6 figure

Terahertz emission from silicon carbide nanostructures

For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain-source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induces a change in the number of magnetic flux quanta in the edge channels, which leads to the appearance of a generation current in the edge channel and, accordingly, to terahertz radiation.Comment: 10 pages, 9 figure

First Measurement of Coherent Elastic Neutrino-Nucleus Scattering on Argon

We report the first measurement of coherent elastic neutrino-nucleus scattering (\cevns) on argon using a liquid argon detector at the Oak Ridge National Laboratory Spallation Neutron Source. Two independent analyses prefer \cevns over the background-only null hypothesis with greater than $3\sigma$ significance. The measured cross section, averaged over the incident neutrino flux, is (2.2 $\pm$ 0.7) $\times$10$^{-39}$ cm$^2$ -- consistent with the standard model prediction. The neutron-number dependence of this result, together with that from our previous measurement on CsI, confirms the existence of the \cevns process and provides improved constraints on non-standard neutrino interactions.Comment: 8 pages, 5 figures with 2 pages, 6 figures supplementary material V3: fixes to figs 3,4 V4: fix typo in table 1, V5: replaced missing appendix, V6: fix Eq 1, new fig 3, V7 final version, updated with final revision

Identification of Radiopure Titanium for the LZ Dark Matter Experiment and Future Rare Event Searches

The LUX-ZEPLIN (LZ) experiment will search for dark matter particle interactions with a detector containing a total of 10 tonnes of liquid xenon within a double-vessel cryostat. The large mass and proximity of the cryostat to the active detector volume demand the use of material with extremely low intrinsic radioactivity. We report on the radioassay campaign conducted to identify suitable metals, the determination of factors limiting radiopure production, and the selection of titanium for construction of the LZ cryostat and other detector components. This titanium has been measured with activities of $^{238}$U$_{e}$~$<$1.6~mBq/kg, $^{238}$U$_{l}$~$<$0.09~mBq/kg, $^{232}$Th$_{e}$~$=0.28\pm 0.03$~mBq/kg, $^{232}$Th$_{l}$~$=0.25\pm 0.02$~mBq/kg, $^{40}$K~$<$0.54~mBq/kg, and $^{60}$Co~$<$0.02~mBq/kg (68\% CL). Such low intrinsic activities, which are some of the lowest ever reported for titanium, enable its use for future dark matter and other rare event searches. Monte Carlo simulations have been performed to assess the expected background contribution from the LZ cryostat with this radioactivity. In 1,000 days of WIMP search exposure of a 5.6-tonne fiducial mass, the cryostat will contribute only a mean background of $0.160\pm0.001$(stat)$\pm0.030$(sys) counts.Comment: 13 pages, 3 figures, accepted for publication in Astroparticle Physic

Квантовая лестница дырочной проводимости в кремниевых наносандвичах

The results of studying the quantum conductance staircase of holes in one−dimensional channels obtained by the split−gate method inside silicon nanosandwiches that are the ultra−narrow quantum well confined by the delta barriers heavily doped with boron on the n−type Si (100) surface are reported. Since the silicon quantum wells studied are ultra−narrow (~2 nm) and confined by the delta barriers that consist of the negative−U dipole boron centers, the quantized conductance of one−dimensional channels is observed at relatively high temperatures (T &gt; 77 K). Further, the current−voltage characteristic of the quantum conductance staircase is studied in relation to the kinetic energy of holes and their sheet density in the quantum wells. The results show that the quantum conductance staircase of holes in p−Si quantum wires is caused by independent contributions of the one−dimensional (1D) subbands of the heavy and light holes; these contributions manifest themselves in the study of square−section quantum wires in the doubling of the quantum−step height (G0 = 4e2/h), except for the first step (G0 = 2e2/h) due to the absence of degeneracy of the lower 1D subband. An analysis of the heights of the first and second quantum steps indicates that there is a spontaneous spin polarization of the heavy and light holes, which emphasizes the very important role of exchange interaction in the processes of 1D transport of individual charge carriers. In addition, the field−related inhibition of the quantum conductance staircase is demonstrated in the situation when the energy of the field−induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split−gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of holes is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. In the concluding section of this paper we present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the silicon nanosandwiches prepared within frameworks of the Hall. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional forms of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.Представлены результаты изучения квантовой лестницы проводимости дырок в одномерных каналах, полученных методом расщепленного затвора внутри кремниевых наносандвичей, которые представляют собой сверхузкую квантовую яму, ограниченную дельта−барьерами, сильно легированными бором на поверхности n−типа Si (100). Так как исследуемая кремниевая квантовая яма является сверхузкой (~2 нм) и ограниченной дельта−барьерами, которые состоят из дипольных центров бора с отрицательной корреляционной энергией, квантовая лестница проводимости одномерных каналов наблюдается при относительно высоких температурах (T &gt; 77 К). Кроме того, квантовая лестница проводимости исследована в зависимости от кинетической энергии дырок и их двумерной плотности в квантовых ямах. Показано, что квантовая лестница дырочной проводимости в р−Si квантовых проволоках обусловлена независимыми вкладами одномерных (1D) подзон тяжелых и легких дырок. Эти вклады проявляются при изучении квантовых проволок квадратного сечения в удвоении амплитуды квантовой ступени (G0 = 4e2/h), исключая первую ступень (G0 = 2e2/h) из−за отсутствия вырождения нижней 1D подзоны. Анализ высоты первой и второй квантовых ступеней указывает на существование спонтанной спиновой поляризации тяжелых и легких дырок, что подчеркивает очень важную роль обменного взаимодействия в процессах одномерного транспорта одиночных носителей. Кроме того, тушение квантовой лестницы дырочной проводимости в электрическом поле проявляется в ситуации, когда энергия полевого разогрева носителей становится сравнимой с энергетической щелью между 1D подзонами. Использование метода расщепленным затвором позволило обнаружить эффект резкого увеличения высоты квантовых ступеней проводимости, когда кинетическая энергия дырок увеличивается. Этот эффект является наиболее сильным для квантовых проволок конечной длины, которые нельзя описать в рамках квантового точечного контакта. Приведены результаты для квантовой лестницы дырочной проводимости, краевыми каналов в кремниевых наносандвичах, выполненных в рамках холловской геометрии. Эта продольная квантовая лестница проводимости, Gxx, выявляется при приложении напряжения к холловским контактам Vху и достигает максимума при 4е2/h. В дополнение к стандартному плато (2e2/h) варьирование напряжения Vxy выявляет дробные значения квантовой лестницы дырочной проводимости с плато и ступенями, величины которых коррелируют с четными и нечетными дробными значениями