421 research outputs found
Ground State at Low Landau Level Filling Factors in Two-Dimensional Systems of GaAs/AlGaAs Heterostructures in Strong Magnetic Fields(Research in High Magnetic Fields)
Integer and fractional quantum Hall effects are interesting phenomena in two-dimensional electron systems (2DES) in strong magnetic fields. In this paper, breakdown of the integer quantum Hall effect (IQHE) at odd integer filling factors at 100 mK and temperature dependence of the fractional quantum Hall effect (FQHE) around the filling facor ν=1/2 at temperatures between 100 mK and 1000 mK in magnetic fields up to 25 T are measured for the 2DES in two AlGaAs/GaAs heterostructures. The results in the IQHE measurements are compared with results at the even filling factors and derive the effective g-factor of about 10 in this system. The results in the FQHE measurements at ν=1/2 shows a logarithmic temperature dependence of the conductivity which is expected in a weakly localized Fermion system in zero magnetic fields
Theory of Current-Induced Breakdown of the Quantum Hall Effect
By studying the quantum Hall effect of stationary states with high values of
injected current using a von Neumann lattice representation, we found that
broadening of extended state bands due to a Hall electric field occurs and
causes the breakdown of the quantum Hall effect. The Hall conductance agrees
with a topological invariant that is quantized exactly below a critical field
and is not quantized above a critical field. The critical field is proportional
to and is enhanced substantially if the extended states occupy a
small fraction of the system.Comment: 5 pages, RevTeX, final version to appear in PR
Field-induced breakdown of the quantum Hall effect
A numerical analysis is made of the breakdown of the quantum Hall effect
caused by the Hall electric field in competition with disorder. It turns out
that in the regime of dense impurities, in particular, the number of localized
states decreases exponentially with the Hall field, with its dependence on the
magnetic and electric field summarized in a simple scaling law. The physical
picture underlying the scaling law is clarified. This intra-subband process,
the competition of the Hall field with disorder, leads to critical breakdown
fields of magnitude of a few hundred V/cm, consistent with observations, and
accounts for their magnetic-field dependence \propto B^{3/2} observed
experimentally. Some testable consequences of the scaling law are discussed.Comment: 7 pages, Revtex, 3 figures, to appear in Phys. Rev.
Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at
low temperatures is reported. Metallic temperature dependence of resistivity is
observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T,
where the spins of electrons are expected to be polarized completely.
Correlation between the spin polarization and minima in the diagonal
resistivity observed by rotating the samples for various total strength of the
magnetic field is also investigated.Comment: 3 pages, RevTeX, 4 eps-figures, conference paper (EP2DS-13
Magnetic von-Neumann lattice for two-dimensional electrons in the magnetic field
One-particle eigenstates and eigenvalues of two-dimensional electrons in the
strong magnetic field with short range impurity and impurities, cosine
potential, boundary potential, and periodic array of short range potentials are
obtained by magnetic von-Neumann lattice in which Landau level wave functions
have minimum spatial extensions. We find that there is a dual correspondence
between cosine potential and lattice kinetic term and that the representation
based on the von-Neumann lattice is quite useful for solving the system's
dynamics.Comment: 21pages, figures not included, EPHOU-94-00
Transport properties of Layer-Antiferromagnet CuCrS2: A possible thermoelectric material
The electrical, thermal conductivity and Seebeck coefficient of the quenched,
annealed and slowly cooled phases of the layer compound CuCrS2 have been
reported between 15K to 300K. We also confirm the antiferromagnetic transition
at 40K in them by our magnetic measurements between 2K and 300K. The crystal
flakes show a minimum around 100K in their in-plane resistance behavior. For
the polycrystalline pellets the resistivity depends on their flaky texture and
it attains at most 10 to 20 times of the room temperature value at the lowest
temperature of measurement. The temperature dependence is complex and no
definite activation energy of electronic conduction can be discerned. We find
that the Seebeck coefficient is between 200-450 microV/K and is unusually large
for the observed resistivity values of between 5-100 mOhm-cm at room
temperature. The figure of merit ZT for the thermoelectric application is 2.3
for our quenched phases, which is much larger than 1 for useful materials. The
thermal conductivity K is mostly due to lattice conduction and is reduced by
the disorder in Cu- occupancy in our quenched phase. A dramatic reduction of
electrical and thermal conductivity is found as the antiferromagnetic
transition is approached from the paramagnetic region, and K subsequently rises
in the ordered phase. We discuss the transport properties as being similar to a
doped Kondo-insulator
Spin Degree of Freedom in a Two-Dimensional Electron Liquid
We have investigated correlation between spin polarization and
magnetotransport in a high mobility silicon inversion layer which shows the
metal-insulator transition. Increase in the resistivity in a parallel magnetic
field reaches saturation at the critical field for the full polarization
evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By
rotating the sample at various total strength of the magnetic field, we found
that the normal component of the magnetic field at minima in the diagonal
resistivity increases linearly with the concentration of ``spin-up'' electrons.Comment: 4 pages, RevTeX, 6 eps-figures, to appear in PR
Quantum Response at Finite Fields and Breakdown of Chern Numbers
We show that the response to an electric field, in models of the Integral
Quantum Hall effect, is analytic in the field and has isolated essential
singularity at zero field. We also study the breakdown of Chern numbers
associated with the response of Floquet states. We argue, and give evidence,
that the breakdown of Chern numbers in Floquet states is a discontinuous
transition at zero field. This follows from an observation, of independent
interest, that Chern numbers for finite dimensional Floquet operators are
generically zero. These results rule out the possibility that the breakdown of
the Hall conductance is a phase transition at finite fields for a large class
of models.Comment: 16 pages, 8 eps figures, LaTeX2e with IOP style. Many changes,
including new materia
Dynamical Screening and Superconducting State in Intercalated Layered Metallochloronitrides
An essential property of layered systems is the dynamical nature of the
screened Coulomb interaction. Low energy collective modes appear as a
consequence of the layering and provide for a superconducting-pairing channel
in addition to the electron-phonon induced attractive interaction. We show that
taking into account this feature allows to explain the high critical
temperatures (Tc~26K) observed in recently discovered intercalated
metallochloronitrides. The exchange of acoustic plasmons between carriers leads
to a significant enhancement of the superconducting critical temperature that
is in agreement with the experimental observations
Integer Quantum Hall Effect with Realistic Boundary Condition : Exact Quantization and Breakdown
A theory of integer quantum Hall effect(QHE) in realistic systems based on
von Neumann lattice is presented. We show that the momentum representation is
quite useful and that the quantum Hall regime(QHR), which is defined by the
propagator in the momentum representation, is realized. In QHR, the Hall
conductance is given by a topological invariant of the momentum space and is
quantized exactly. The edge states do not modify the value and topological
property of in QHR. We next compute distribution of current based
on effective action and find a finite amount of current in the bulk and the
edge, generally. Due to the Hall electric field in the bulk, breakdown of the
QHE occurs. The critical electric field of the breakdown is proportional to
and the proportional constant has no dependence on Landau levels in
our theory, in agreement with the recent experiments.Comment: 48 pages, figures not included, some additions and revision
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