Ground State at Low Landau Level Filling Factors in Two-Dimensional Systems of GaAs/AlGaAs Heterostructures in Strong Magnetic Fields(Research in High Magnetic Fields)

Integer and fractional quantum Hall effects are interesting phenomena in two-dimensional electron systems (2DES) in strong magnetic fields. In this paper, breakdown of the integer quantum Hall effect (IQHE) at odd integer filling factors at 100 mK and temperature dependence of the fractional quantum Hall effect (FQHE) around the filling facor ν=1/2 at temperatures between 100 mK and 1000 mK in magnetic fields up to 25 T are measured for the 2DES in two AlGaAs/GaAs heterostructures. The results in the IQHE measurements are compared with results at the even filling factors and derive the effective g-factor of about 10 in this system. The results in the FQHE measurements at ν=1/2 shows a logarithmic temperature dependence of the conductivity which is expected in a weakly localized Fermion system in zero magnetic fields

Theory of Current-Induced Breakdown of the Quantum Hall Effect

By studying the quantum Hall effect of stationary states with high values of injected current using a von Neumann lattice representation, we found that broadening of extended state bands due to a Hall electric field occurs and causes the breakdown of the quantum Hall effect. The Hall conductance agrees with a topological invariant that is quantized exactly below a critical field and is not quantized above a critical field. The critical field is proportional to $B^{3/2}$ and is enhanced substantially if the extended states occupy a small fraction of the system.Comment: 5 pages, RevTeX, final version to appear in PR

Field-induced breakdown of the quantum Hall effect

A numerical analysis is made of the breakdown of the quantum Hall effect caused by the Hall electric field in competition with disorder. It turns out that in the regime of dense impurities, in particular, the number of localized states decreases exponentially with the Hall field, with its dependence on the magnetic and electric field summarized in a simple scaling law. The physical picture underlying the scaling law is clarified. This intra-subband process, the competition of the Hall field with disorder, leads to critical breakdown fields of magnitude of a few hundred V/cm, consistent with observations, and accounts for their magnetic-field dependence \propto B^{3/2} observed experimentally. Some testable consequences of the scaling law are discussed.Comment: 7 pages, Revtex, 3 figures, to appear in Phys. Rev.

Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.Comment: 3 pages, RevTeX, 4 eps-figures, conference paper (EP2DS-13

Magnetic von-Neumann lattice for two-dimensional electrons in the magnetic field

One-particle eigenstates and eigenvalues of two-dimensional electrons in the strong magnetic field with short range impurity and impurities, cosine potential, boundary potential, and periodic array of short range potentials are obtained by magnetic von-Neumann lattice in which Landau level wave functions have minimum spatial extensions. We find that there is a dual correspondence between cosine potential and lattice kinetic term and that the representation based on the von-Neumann lattice is quite useful for solving the system's dynamics.Comment: 21pages, figures not included, EPHOU-94-00

Transport properties of Layer-Antiferromagnet CuCrS2: A possible thermoelectric material

The electrical, thermal conductivity and Seebeck coefficient of the quenched, annealed and slowly cooled phases of the layer compound CuCrS2 have been reported between 15K to 300K. We also confirm the antiferromagnetic transition at 40K in them by our magnetic measurements between 2K and 300K. The crystal flakes show a minimum around 100K in their in-plane resistance behavior. For the polycrystalline pellets the resistivity depends on their flaky texture and it attains at most 10 to 20 times of the room temperature value at the lowest temperature of measurement. The temperature dependence is complex and no definite activation energy of electronic conduction can be discerned. We find that the Seebeck coefficient is between 200-450 microV/K and is unusually large for the observed resistivity values of between 5-100 mOhm-cm at room temperature. The figure of merit ZT for the thermoelectric application is 2.3 for our quenched phases, which is much larger than 1 for useful materials. The thermal conductivity K is mostly due to lattice conduction and is reduced by the disorder in Cu- occupancy in our quenched phase. A dramatic reduction of electrical and thermal conductivity is found as the antiferromagnetic transition is approached from the paramagnetic region, and K subsequently rises in the ordered phase. We discuss the transport properties as being similar to a doped Kondo-insulator

Spin Degree of Freedom in a Two-Dimensional Electron Liquid

We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches saturation at the critical field for the full polarization evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By rotating the sample at various total strength of the magnetic field, we found that the normal component of the magnetic field at minima in the diagonal resistivity increases linearly with the concentration of ``spin-up'' electrons.Comment: 4 pages, RevTeX, 6 eps-figures, to appear in PR

Quantum Response at Finite Fields and Breakdown of Chern Numbers

We show that the response to an electric field, in models of the Integral Quantum Hall effect, is analytic in the field and has isolated essential singularity at zero field. We also study the breakdown of Chern numbers associated with the response of Floquet states. We argue, and give evidence, that the breakdown of Chern numbers in Floquet states is a discontinuous transition at zero field. This follows from an observation, of independent interest, that Chern numbers for finite dimensional Floquet operators are generically zero. These results rule out the possibility that the breakdown of the Hall conductance is a phase transition at finite fields for a large class of models.Comment: 16 pages, 8 eps figures, LaTeX2e with IOP style. Many changes, including new materia

Dynamical Screening and Superconducting State in Intercalated Layered Metallochloronitrides

An essential property of layered systems is the dynamical nature of the screened Coulomb interaction. Low energy collective modes appear as a consequence of the layering and provide for a superconducting-pairing channel in addition to the electron-phonon induced attractive interaction. We show that taking into account this feature allows to explain the high critical temperatures (Tc~26K) observed in recently discovered intercalated metallochloronitrides. The exchange of acoustic plasmons between carriers leads to a significant enhancement of the superconducting critical temperature that is in agreement with the experimental observations

Integer Quantum Hall Effect with Realistic Boundary Condition : Exact Quantization and Breakdown

A theory of integer quantum Hall effect(QHE) in realistic systems based on von Neumann lattice is presented. We show that the momentum representation is quite useful and that the quantum Hall regime(QHR), which is defined by the propagator in the momentum representation, is realized. In QHR, the Hall conductance is given by a topological invariant of the momentum space and is quantized exactly. The edge states do not modify the value and topological property of $\sigma_{xy}$ in QHR. We next compute distribution of current based on effective action and find a finite amount of current in the bulk and the edge, generally. Due to the Hall electric field in the bulk, breakdown of the QHE occurs. The critical electric field of the breakdown is proportional to $B^{3/2}$ and the proportional constant has no dependence on Landau levels in our theory, in agreement with the recent experiments.Comment: 48 pages, figures not included, some additions and revision