Monte Carlo Investigation of Potential Fluctuation in 3D Device Structure

Abstract-The motions of particles are calculated in 3D structure to evaluate potential fluctuation. The results of homogeneous and thermal equilibrium systems are in good agreement with theoretical results. In 3D MOSFET, the potential fluctuation extends towards the depletion layer and deviation of the amplitude from theoretical value is observed and ascribed to hot electron energy distribution, so the conventional plasmon scattering model should be modified in non-uniform and nonequilibrium carrier distribution

Self propagating high temperature synthesis of SrTiO3 and SrxBayTiO3(x+y=1)

Thermal initiation of mixed powders of SrO2 and titanium and/or TiE (E = O2, Cl3) induces a self-propagating reaction. Trituration of the product with water yielded fine crystalline particles of cubic SrTiO3. Stepwise replacement of SrO2 with BaO2 in the reaction mixture generates a solid solution Sr x Ba y TiO3 (x+y=1). Products were characterized by X-ray powder diffraction, scanning electron microscopy, energy-dispersive analysis of X-rays and Fourier transform-infrared spectroscopy. Thermal studies were monitored by thermogravimetric analysis and differential scanning calorimetry measurements