MBE GROWTH AND PROPERTIES OF ZnYbTe LAYERS

The MBE grown ZnYbTe layers were characterized by X-ray diffraction, photoluminescence and reflectivity measurements. The MBE growth conditions allowing to obtain monocrystalline ZnYbTe layers were found to be metal-rich (MBE growth with excess of Zn flux). In optical measurements (photoluminescence, reflectivity), both transitions connected with ternary ZnYbTe compound and with Yb3+ ions were detected. The quality of ZnYbTe layers with Yb content of 3% and 1% is inferior to the quality of pure ZnTe MB.E layers, which is clearly seen in the results of photoluminescence and reflectivity measurements. In the ZnYbTe layers with 3% Yb, exhibiting monocrystalline character in reflection high-energy electron diffraction and X-ray diffraction measurements, optical transitions characteristic of pure YbTe were detected. In ZnYbTe layers with 1% Yb, no transítions connected with YbTe were observed

Tunable Ultraviolet Source for Resonant Photoemission Spectroscopy

The paper presents original experimental results which were chosen to present an application of the synchrotron radiation for study of engineering of the valence band electronic structure of the semimagnetic semiconductors. The results of the resonant photoemission study (Fano type resonance) of transition metal atoms (3p-3d electrons transition) and rare earth atoms (4d-4f electrons transition) incorporated into the volume of the II-VI and IV-VI compounds or deposited on clean surface of the CdTe crystal will be presented

MBE Growth and Properties of ZnYbTe Layers

The MBE grown ZnYbTe layers were characterized by X-ray diffraction, photoluminescence and reflectivity measurements. The MBE growth conditions allowing to obtain monocrystalline ZnYbTe layers were found to be metal-rich (MBE growth with excess of Zn flux). In optical measurements (photoluminescence, reflectivity), both transitions connected with ternary ZnYbTe compound and with Yb$\text{}^{3+}$ ions were detected. The quality of ZnYbTe layers with Yb content of 3% and 1% is inferior to the quality of pure ZnTe MBE layers, which is clearly seen in the results of photoluminescence and reflectivity measurements. In the ZnYbTe layers with 3% Yb, exhibiting monocrystalline character in reflection high-energy electron diffraction and X-ray diffraction measurements, optical transitions characteristic of pure YbTe were detected. In ZnYbTe layers with 1% Yb, no transitions connected with YbTe were observed

Analysis of 4ff Level in Samarium-Rich MBE Grown CdSmTe Sample

Electronic states of 4f samarium ions were investigated by photoemis-sion spectroscopy in samarium-rich CdSmTe sample obtained by MBE. Thephoton energy of synchrotron radiation allowed to investigate Fano-type res-onance and antiresonance. The energy distribution curve spectra were at-tributed to the Sm 4d-4f transition. The shape of the constant initial statesspectra was compared with this one obtained for atomic samariu

The influence of the Fe 3d states on the electronic band structure of CdTe/FeCdTe/Fe and bulk Cd0.985Fe0.015Te\mathrm{Cd_{0.985}Fe_{0.015}Te} crystal

The electronic structure of Cd0.985Fe0.015Te has been studied by resonant photoemission in the synchrotron radiation photon energy range from 48 to 67 eV. Photoemission spectra revealed that Fe contributions to the valence band density of states are situated at 1.2 eV, 4.1 eV and 5.9 eV below the valence band maximum. The contribution of Fe 3d states to the valence band electronic structure was also observed in situ during evaporation of Fe atoms on the clean CdTe(110) surface. Photoemission measurements show that after Fe evaporation and heating to 265°C the CdTe(110)/Fe crystal, a ternary compound Cd1−xFexTe is created in the surface region. The results of photoemission experiments are consistent with the theoretical calculations made by the CPA (coherent potential approximation) method

Cr 3d Surface and Bulk States in Sn1−x\text{}_{1-x}Crx\text{}_{x}Te/Cr Crystals

We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed

Cr 3d Surface and Bulk States in Sn1−xCrx\mathrm{Sn_{1-x} Cr_x} Te/Cr Crystals

We report a new approach to investigate metal-semiconductor interfaceformation. Photoemission spectroscopy was applied in order to investigatethe clean surface of a Sn0.97 Cr0.03Tecrystal and to observe its changes undersequential deposition of small amounts of Cr atoms. In order to analyse theCr 3d contribution to the valence band, the Fano-type resonance tuned tothe Cr 3p-3d transition was used. The experiment was designed to follow theSno.97Cr0.o3Te/Cr interface formation process. At the clean Sn0.97Cro.o3Tesurface, the Cr 3d states contribution to the valence band was found to bepositioned 0.8 eV below the Fermi level. After the Cr deposition processesthe contribution shifted to a higher binding energy and another contribution5.8 eV below the Fermi level was also observed