Accuracy Assessment of the ESA CCI 20M Land Cover Map: Kenya, Gabon, Ivory Coast and South Africa

This working paper presents the overall and spatial accuracy assessment of the European Space Agency (ESA) 20 m prototype land cover map for Africa for four countries: Kenya, Gabon, Ivory Coast and South Africa. This accuracy assessment was undertaken as part of the ESA-funded CrowdVal project. The results varied from 44% (for South Africa) to 91% (for Gabon). In the case of Kenya (56% overall accuracy) and South Africa, these values are largely caused by the confusion between grassland and shrubland. However, if a weighted confusion matrix is used, which diminishes the importance of the confusion between grassland and shrubs, the overall accuracy for Kenya increases to 79% and for South Africa, 75%. The overall accuracy for Ivory Coast (47%) is a result of a highly fragmented land cover, which makes it a difficult country to map with remote sensing. The exception was Gabon with a high overall accuracy of 91%, but this can be explained by the high amount of tree cover across the country, which is a relatively easy class to map

Understanding of void formation in Cu/Sn-Sn/Cu system during transient liquid phase bonding process through diffusion modeling

Transient Liquid Phase (TPL) bounding of Sn foil sandwiched between two Cu foils involves, in the temperature range above the melting point of Sn (232 °C) and below 350 °C, the formation and the growth of two intermetallic compounds (IMCs) Cu6Sn5 and Cu3Sn and mostly unintended micro-pores. The present study aims to analyze the mechanism of void development during the soldering process through an experimental and modeling approach of diffusion-controlled IMC transformation. This modeling couples the diffusion process and the interface motion with the volume shrinkage induced by the difference of partial molar volumes of atoms between each phase. We also consider two types of inter-diffusion transports: (i) inter-diffusion based on the exchange of Cu and Sn atoms and (ii) inter-diffusion of Sn atoms with vacancies allowing Kirkendall void formation. The simulations of IMC growth performed correspond to a sequence of planar phase layers, where the distinctive scallop morphology of the Cu6Sn5 layer is described through an analytical function allowing to quantify the grain boundary diffusion pathway. We take into account of the volume diffusion mechanism for Cu3Sn intermetallic. For Cu6Sn5 intermetallic two mechanisms are considered, volume diffusion and grain boundary diffusion, limited by grain growth. The simulations of IMC growth kinetics, for different transport scenarios, are compared to the experimental evolving morphologies to determine the most likely mechanism of micro-void formation