Impact of alloy disorder on the band structure of compressively strained GaBiAs

The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy (E$_g$) accompanied with a large increase in the spin-orbit splitting energy ($\bigtriangleup_{SO}$), leading to the condition that $\bigtriangleup_{SO} > E_g$ which is anticipated to reduce so-called CHSH Auger recombination losses whereby the energy and momentum of a recombining electron-hole pair is given to a second hole which is excited into the spin-orbit band. We theoretically investigate the electronic structure of experimentally grown GaBi$_x$As$_{1-x}$ samples on (100) GaAs substrates by directly comparing our data with room temperature photo-modulated reflectance (PR) measurements. Our atomistic theoretical calculations, in agreement with the PR measurements, confirm that E$_g$ is equal to $\bigtriangleup_{SO}$ for $\textit{x} \approx$ 9$$. We then theoretically probe the inhomogeneous broadening of the interband transition energies as a function of the alloy disorder. The broadening associated with spin-split-off transitions arises from conventional alloy effects, while the behaviour of the heavy-hole transitions can be well described using a valence band-anticrossing model. We show that for the samples containing 8.5% and 10.4% Bi the difficulty in identifying a clear light-hole-related transition energy from the measured PR data is due to the significant broadening of the host matrix light-hole states as a result of the presence of a large number of Bi resonant states in the same energy range and disorder in the alloy. We further provide quantitative estimates of the impact of supercell size and the assumed random distribution of Bi atoms on the interband transition energies in GaBi$_{x}$As$_{1-x}$. Our calculations support a type-I band alignment at the GaBi$_x$As$_{1-x}$/GaAs interface, consistent with recent experimental findings

GaAs-based dilute bismide semiconductor lasers:Theory vs. experiment

We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band k·p Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBi x As 1-x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBi x As 1-x /(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain - a first for this emerging material system - and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 μm

Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers

We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band k·p Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 μm lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 μm. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 - 5 μm wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAs- and InP-based near- and mid-infrared laser technologies

Genetic and systems level analysis of Drosophila sticky/citron kinase and dFmr1 mutants reveals common regulation of genetic networks

<p>Abstract</p> <p>Background</p> <p>In <it>Drosophila</it>, the genes <it>sticky </it>and <it>dFmr1 </it>have both been shown to regulate cytoskeletal dynamics and chromatin structure. These genes also genetically interact with Argonaute family microRNA regulators. Furthermore, in mammalian systems, both genes have been implicated in neuronal development. Given these genetic and functional similarities, we tested <it>Drosophila sticky </it>and <it>dFmr1 </it>for a genetic interaction and measured whole genome expression in both mutants to assess similarities in gene regulation.</p> <p>Results</p> <p>We found that <it>sticky </it>mutations can dominantly suppress a <it>dFmr1 </it>gain-of-function phenotype in the developing eye, while phenotypes produced by RNAi knock-down of <it>sticky </it>were enhanced by <it>dFmr1 </it>RNAi and a <it>dFmr1 </it>loss-of-function mutation. We also identified a large number of transcripts that were misexpressed in both mutants suggesting that <it>sticky </it>and <it>dFmr1 </it>gene products similarly regulate gene expression. By integrating gene expression data with a protein-protein interaction network, we found that mutations in <it>sticky </it>and <it>dFmr1 </it>resulted in misexpression of common gene networks, and consequently predicted additional specific phenotypes previously not known to be associated with either gene. Further phenotypic analyses validated these predictions.</p> <p>Conclusion</p> <p>These findings establish a functional link between two previously unrelated genes. Microarray analysis indicates that <it>sticky </it>and <it>dFmr1 </it>are both required for regulation of many developmental genes in a variety of cell types. The diversity of transcripts regulated by these two genes suggests a clear cause of the pleiotropy that <it>sticky </it>and <it>dFmr1 </it>mutants display and provides many novel, testable hypotheses about the functions of these genes. As both of these genes are implicated in the development and function of the mammalian brain, these results have relevance to human health as well as to understanding more general biological processes.</p

Optical gain in GaAsBi/GaAs quantum well diode lasers

Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly impact upon the device performance. Suppression of these loss mechanisms promises to lead to highly efficient, uncooled operation of telecommunications lasers, making GaAsBi system a strong candidate for the development of next-generation semiconductor lasers. In this report we present the first experimentally measured optical gain, absorption and spontaneous emission spectra for GaAsBi-based quantum well laser structures. We determine internal optical losses of 10–15 cm−1 and a peak modal gain of 24 cm−1, corresponding to a material gain of approximately 1500 cm−1 at a current density of 2 kA cm−2. To complement the experimental studies, a theoretical analysis of the spontaneous emission and optical gain spectra is presented, using a model based upon a 12-band k.p Hamiltonian for GaAsBi alloys. The results of our theoretical calculations are in excellent quantitative agreement with the experimental data, and together provide a powerful predictive capability for use in the design and optimisation of high efficiency lasers in the infrared