Analysis of Internally Shunted Josephson Junctions

partially_open11sìFollowing the ever-rising demand for new functionalities and novel materials in superconducting circuitry, we provide a complete view on the self-shunting problem in Josephson junctions, relating it to specific features of a multichannel weak link between electrodes where averaging over the channels yields a bimodal distribution of transparencies with maxima near unity and zero. We provide two examples of such internally shunted devices, namely, four-layered Nb/Al-Al oxide-Nb junctions with strongly disordered nanometer-thick insulating layers where stochastic distribution of transparencies takes place on a local rather than a global scale and MoRe/W-doped Si-Si-MoRe devices with strongly inhomogeneous silicon interlayers partly doped by metallic nanoclusters where the main charge transport occurs across resonance-percolating trajectories. We show how the predicted universal distribution function of transmission coefficients can be verified experimentally without any fitting parameters and analyze some old and new experimental data from this perspective. We believe that our results can form a base for novel four-layered Josephson junctions with enhanced superconducting properties and, at the same time, well-separated metallic electrodes.partially_openLacquaniti, Vincenzo; Cassiago, Cristina; De Leo, Natascia; Fretto, Matteo; Sosso, Andrea; Febvre, Pascal; Shaternik, Volodymyr; Shapovalov, Andrii; Suvorov, Olexandr; Belogolovskii, Mikhail; Seidel, PaulLacquaniti, Vincenzo; Cassiago, Cristina; DE LEO, Maria; Fretto, MATTEO ANDREA; Sosso, Andrea; Febvre, Pascal; Shaternik, Volodymyr; Shapovalov, Andrii; Suvorov, Olexandr; Belogolovskii, Mikhail; Seidel, Pau

Charge Transport in Superconducting Heterostructures MoRe-Si(W)-MoRe with a Hybrid Semiconducting Barrier with Metallic Nanoclusters

International audienc

Hybrid Heterostructures MoRe/doped Si/MoRe and MoRe/doped Si/MoRe/doped Si/MoRe with phase-slip effects in them

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Phase-slip Events in MoRe-Si(W)-MoRe heterostructres

session poster 1EP2-08International audienc

Revealing the nature of two-level systems at a superconductor-insulator boundary

poster 3EPo2C-01International audienc

SQUIDs based on self-shunted MoRe-Si(W)-MoRe Josephson junctions

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Internally shunted junctions: a unified analysis of various approaches

session Electronics - Junctions, circuit design and fabrication (2A-E-O1)International audienceFollowing the ever-rising demand for new functionalities and novel materials in superconducting circuitry, we provide a complete view on the self-shunting problem in Josephson junctions relating it to specific features of a multichannel weak link between electrodes where averaging over the channels yields a bimodal distribution of transparencies with maxima near unity and zero. We provide two examples of such internally-shunted devices, four-layered Nb/Al-Al oxide-Nb junctions with strongly disordered nm-thick insulating layers where stochastic distribution of transparencies takes place on a local rather than a global scale and MoRe/W-doped Si-Si–MoRe devices with strongly inhomogeneous silicon interlayers partly doped by metallic nanoclusters where the main charge transport occurs across resonance-percolating trajectories. We show how the predicted universal distribution function of transmission coefficients can be verified experimentally without any fitting parameters and analyze some old and new experimental data from this perspective. We believe that our results can form a base for novel four-layered Josephson junctions with enhanced superconducting properties and, at the same time, well-separated metallic electrodes