20 research outputs found

    1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C

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    10-Gb/s modulation speed up to 100 degrees C temperature is achieved with wafer-fused VCSELs incorporating re-grown tunnel junction and emitting more than 1-mW single mode power at the 1300-nm waveband in the full temperature range. (C) 2009 Optical Society of Americ

    Increasing single mode power of 13-ÎĽm VCSELs by output coupling optimization

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    We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80 degrees C, with more than 30 dB single mode suppression ratio, have been obtained. (C) 2015 Optical Society of Americ

    High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

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    InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80 degrees C for both 1310 nm and 1550 nm devices is demonstrated for the first time. (C)2008 Optical Society of Americ

    10Gb/s and 10km error-free transmission up to 100ºC with 1.3µm wafer-fused VCSELs

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    10-Gb/s modulation speed and transmission over 10-km SM fiber with BER < 10(-11) up to 100 degrees C temperature are achieved with optimized wafer-fused GaAs/AlGaAs-InP/InAlGaAs VCSELs incorporating re-grown tunnel junction. These VCSELs operate in the 1310-nm waveband and emit more than 1-mW single mode power in the full temperature range. (C) 2009 Optical Society of Americ

    Recent Developments in Long Wavelength VCSELs Based on Localized Wafer Fusion

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    We review recent results on wafer fused long wavelength VCSELs emitting in the 1310 - 2000 nm range. This technology allows reaching fundamental mode output in excess of 4.5 mW at room temperature and close to 3 mW at 70 degrees C for both the 1310 nm and 1550 nm wavebands-the highest values obtained so far. Emission wavelength can be tuned continuously with current with a tuning range as large as 15 nm. For 2000 nm emission wavelength, room temperature output is similar to 0.5 mW, limited so far by high optical absorption in the cavity. 1310 nm-VCSELs that are optimized for high speed operation yield excellent 10 Gbps operation both at room temperature and at 100 degrees C

    Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

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    Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on the same wafer in a spectral range of 40 nm is demonstrated with these devices. This performance positions wafer-fused 1550 nm VCSELs as prime candidates for many applications in photonics, including air-space fiber-optic communications and WDM-PON as well as in spectroscopy and sensing

    Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

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    Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. We report here on the detailed modal analysis of wafer-fused 1550-nm wavelength VCSELs incorporating an AlGaInAs/InP active region, a re-grown circular tunnel junction (TJ) and undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs). We experimentally determined the diameter of the TJ that optimizes the output power and threshold current, finding a value between 7.0 mu m and 9.5 mu m depending on the temperature. Moreover, we investigated the impact of the TJ aperture diameter on the mode structure. A large batch of devices was investigated, allowing drawing conclusions on typical behavior of these devices

    Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

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    Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity adjustment technique, the wavelength yield was increased to up to 70% for all four coarse wavelength division multiplexing (CWDM) channels implemented. It was demonstrated that single-mode devices can have threshold and operation currents below 1 and 7 mA, respectively, in the full 0-80 degrees C temperature range. The reproducibility of the fabrication process and prospects for enhancing performance and yield of such VCSELs are also discussed. (C) 2014 Elsevier B.V. All rights reserved

    Optical injection locking of polarization modes and spatial modes in single-aperture VCSELs and VCSEL arrays emitting at 1.3 mu m

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    We report the injection locking of specific spatial modes and polarization modes of 1.3 mu m wavelength vertical surface emitting lasers (VCSELs) in single-aperture devices and phase-coupled arrays. The optical injection is realized using a master laser (ML) VCSEL, the beam of which is directed onto the output facet of the slave laser (SL) VCSEL or VCSEL array. We measured the emission spectra of the SL as the ML operating conditions (frequency, power) were varied systematically, and present the results on two-dimensional stability maps of power versus detuning of the ML from the injected modes
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