162 research outputs found

    Phase Transformations and Switching of Chalcogenide Phase-change Material Films Prepared by Pulsed Laser Deposition

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    The thesis deals with the preparation, characterization and, in particular, with the switching properties of phase-change material (PCM) thin films. The films were deposited using the Pulsed Laser Deposition (PLD) technique. Phase transformations in these films were triggered by means of thermal annealing, laser pulses, and electrical pulses. The five major physical aspects structure transformation, crystallization kinetics, topography, optical properties, and electrical properties have been investigated using XRD, TEM, SEM, AFM, DSC, UV-Vis spectroscopy, a custom-made nanosecond UV laser pump-probe system, in situ resistance measurements, and conductive-AFM. The systematic investigation of the ex situ thermally induced crystallization process of pure stoichiometric GeTe films and O-incorporating GeTe films provides detailed information on structure transformation, topography, crystallization kinetics, optical reflectivity and electrical resistivity. The results reveal a significant improvement of the thermal stability in PCM application for data storage. With the aim of reducing the switching energy consumption and to enhance the optical reflectivity contrast by improving the quality of the produced films, the growth of the GeTe films with simultaneous in situ thermal treatment was investigated with respect to optimizing the film growth conditions, e.g. growth temperature, substrate type. For the investigation of the fast phase transformation process, GeTe films were irradiated by ns UV laser pulses, tailoring various parameters such as pulse number, laser fluence, pulse repetition rate, and film thickness. Additionally, the investigation focused on the comparison of crystallization of GST thin films induced by either nano- or femtosecond single laser pulse irradiation, used to attain a high data transfer rate and to improve the understanding of the mechanisms of fast phase transformation. Non-volatile optical multilevel switching in GeTe phase-change films was identified to be feasible and accurately controllable at a timescale of nanoseconds, which is promising for high speed and high storage density of optical memory devices. Moreover, correlating the dynamics of the optical switching process and the structural information demonstrated not only exactly how fast phase change processes take place, but also, importantly, allowed the determination of the rapid kinetics of phase transformation on the microscopic scale. In the next step, a new general concept for the combination of PCRAM and ReRAM was developed. Bipolar electrical switching of PCM memory cells at the nanoscale can be achieved and improvements of the performance in terms of RESET/SET operation voltage, On/Off resistance ratio and cycling endurance are demonstrated. The original underlying mechanism was verified by the Poole-Frenkel conduction model. The polarity-dependent resistance switching processes can be visualized simultaneously by topography and current images. The local microstructure on the nanoscale of such memory cells and the corresponding local chemical composition were correlated. The gained results contribute to meeting the key challenges of the current understanding and of the development of PCMs for data storage applications, covering thin film preparation, thermal stability, signal-to-noise ratio, switching energy, data transfer rate, storage density, and scalability

    Experimentally well-constrained masses of 27P and 27S: implications for studies of explosive binary systems

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    The mass of 27P is expected to impact the X-ray burst (XRB) model predictions of burst light curves and the composition of the burst ashes, but large uncertainties and inconsistencies still exist in the reported 27P masses. We have used the ß-decay spectroscopy of 27S to determine the most precise mass excess of 27P to date to be keV, which is 63 keV (2.3s) higher and a factor of 3 more precise than the value recommended in the 2016 Atomic Mass Evaluation. Based on the new 27P mass, the P reaction rate and its uncertainty were recalculated using Monte Carlo techniques. We also estimated the previously unknown mass excess of 27S to be 17678(77) keV, based on the measured ß-delayed two-proton energy and the Coulomb displacement energy relations. The impact of these well-constrained masses and reaction rates on the modeling of the explosive astrophysical scenarios has been investigated by post-processing XRB and hydrodynamic nova models. Compared to the model calculations based on the masses and rates from databases, the abundance of in the burst ashes is increased by a factor of 2.4, while no substantial change was found in the XRB energy generation rate or the light curve. Our calculation also suggests that 27S is not a significant waiting point in the rapid proton capture process, and the change of the P reaction rate is not sufficiently large to affect the conclusion previously drawn on the nova contribution to the synthesis of galactic 26Al.Postprint (published version

    Topology optimization of compliant adaptive wing leading edge with composite materials

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    AbstractAn approach for designing the compliant adaptive wing leading edge with composite material is proposed based on the topology optimization. Firstly, an equivalent constitutive relationship of laminated glass fiber reinforced epoxy composite plates has been built based on the symmetric laminated plate theory. Then, an optimization objective function of compliant adaptive wing leading edge was used to minimize the least square error (LSE) between deformed curve and desired aerodynamics shape. After that, the topology structures of wing leading edge of different glass fiber ply-orientations were obtained by using the solid isotropic material with penalization (SIMP) model and sensitivity filtering technique. The desired aerodynamics shape of compliant adaptive wing leading edge was obtained based on the proposed approach. The topology structures of wing leading edge depend on the glass fiber ply-orientation. Finally, the corresponding morphing experiment of compliant wing leading edge with composite materials was implemented, which verified the morphing capability of topology structure and illustrated the feasibility for designing compliant wing leading edge. The present paper lays the basis of ply-orientation optimization for compliant adaptive wing leading edge in unmanned aerial vehicle (UAV) field

    Seeing is believing: The colour of silver alloys and the global silver circulation in the Chinese Ming and Qing dynasties

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    This research investigates the correlation between colour perception and the circulation of silver in China during the Ming (1368–1644 CE) and Qing (1644–1911 CE) dynasties. The primary aim is to deepen our understanding of how silver alloys were perceived and experienced in this historical context while also situating our study within the broader context of the global silver trade. During the Ming and Qing dynasties, silver possessed immense historical significance as a precious commodity. We argue that copper had a more substantial influence on the final colour of silver alloys compared to lead. Furthermore, employing a colourimetric model, our Monte‐Carlo simulation demonstrates that over 70% of silver from Mesoamerica to China could be discerned by nonexperts using only their unaided vision, largely due to the elevated copper content. Crucially, our simulation experiment reveals differing effects of copper and lead on the colour of silver alloys. The latter demonstrates minimal change until reaching a threshold of 15%, signifying that lead is a suitable and cost‐effective substitute for silver. These findings suggest that the detection of silver purity was less demanding than previously assumed, opening up opportunities for arbitrage

    Controlling photonic spin Hall effect via exceptional points

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    The photonic spin Hall effect (SHE), featured by a spin-dependent transverse shift of an impinging optical beam driven by its polarization handedness, has many applications including precise metrology and spin-based nanophotonic devices. It is highly desirable to control and enhance the photonic SHE. However, such a goal remains elusive, due to the weak spin-orbit interaction of light, especially for systems with optical loss. Here we reveal a flexible way to modulate the photonic SHE via exceptional points, by exploiting the transverse shift in a parity-time (PT) symmetric system with balanced gain and loss. The underlying physics is associated with the near-zero value and abrupt phase jump of the reflection coefficients at exceptional points. We find that the transverse shift is zero at exceptional points, but it is largely enhanced in their vicinity. In addition, the transverse shift switches its sign across the exceptional point, resulting from spontaneous PT-symmetry breaking. Due to the sensitivity of transverse shift at exceptional points, our work also indicates that the photonic SHE can enable a precise way to probe the location of exceptional point in photonic systems.Comment: 14 pages, 4 figure

    Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation

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    The amorphous to crystalline phase transformation of Ge2Sb2Te5 (GST) films by UV nanosecond (ns) and femtosecond (fs) single laser pulse irradiation at the same wavelength is compared. Detailed structural information about the phase transformation is collected by x-ray diffraction and high resolution transmission electron microscopy (TEM). The threshold fluences to induce crystallization are determined for both pulse lengths. A large difference between ns and fs pulse irradiation was found regarding the grain size distribution and morphology of the crystallized films. For fs single pulse irradiated GST thin films, columnar grains with a diameter of 20 to 60 nm were obtained as evidenced by cross-sectional TEM analysis. The local atomic arrangement was investigated by highresolution Cs-corrected scanning TEM. Neither tetrahedral nor off-octahedral positions of Ge-atoms could be observed in the largely defect-free grains. A high optical reflectivity contrast (~25%) between amorphous and completely crystallized GST films was achieved by fs laser irradiation induced at fluences between 13 and 16 mJ/cm2 and by ns laser irradiation induced at fluences between 67 and 130 mJ/cm2. Finally, the fluence dependent increase of the reflectivity is discussed in terms of each photon involved into the crystallization process for ns and fs pulses, respectively
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