Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices

Electrical Manipulation of Telecom Color Centers in Silicon

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters

Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation

The negatively-charged silicon-vacancy (SiV−) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, SiV− centers with narrow optical linewidths and small inhomogeneous distributions of SiV− transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted SiV− centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality SiV− centers into nanophotonic devices.Physic