Comprehensive scheme for identifying defects in solid-state quantum systems

A solid-state quantum emitter is one of the indispensable components for optical quantum technologies. Ideally, an emitter should have a compatible wavelength for efficient coupling to other components in a quantum network. It is therefore essential to understand fluorescent defects that lead to specific emitters. In this work, we employ density functional theory (DFT) to demonstrate the calculation of the complete optical fingerprints of quantum emitters in the two-dimensional material hexagonal boron nitride. These emitters are of great interest, yet many of them are still to be identified. Our results suggest that instead of comparing a single optical property, such as the commonly used zero-phonon line energy, multiple properties should be used when comparing theoretical simulations to the experiment. This way, the entire electronic structure can be predicted and quantum emitters can be designed and tailored. Moreover, we apply this approach to predict the suitability for using the emitters in specific quantum applications, demonstrating through the examples of the Al$_{\text{N}}$ and P$_{\text{N}}$V$_{\text{B}}$ defects. We therefore combine and apply DFT calculations to identify quantum emitters in solid-state crystals with a lower risk of misassignments as well as a way to design and tailor optical quantum systems. This consequently serves as a recipe for classification and the generation of universal solid-state quantum emitter systems in future hybrid quantum networks.Comment: 10 pages, 4 figure

Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories

A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems have been developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions have been investigated. Among these defects, we found that some defects inherit the $\Lambda$ electronic structures desirable for a Raman-type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95\% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet-singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks.Comment: 12 pages, 6 figure

Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride

Single photon emitters in solid-state crystals have received a lot of attention as building blocks for numerous quantum technology applications. Fluorescent defects in hexagonal boron nitride (hBN) stand out due to their high luminosity and robust operation at room temperature. The identical emitter fabrication at pre-defined sites is still challenging, which hampers the integration of these defects in optical systems and electro-optical devices. Here, we demonstrate the localized fabrication of hBN emitter arrays by electron beam irradiation using a standard scanning electron microscope with deep sub-micron lateral precision. The emitters are created with a high yield and a reproducible spectrum peaking at 575 nm. Our measurements of optically detected magnetic resonance have not revealed any addressable spin states. Using density functional theory, we attribute the experimentally observed emission lines to carbon-related defects, which are activated by the electron beam. Our scalable approach provides a promising pathway for fabricating room temperature single photon emitters in integrated quantum devices

Modeling of price and profit in coupled-ring networks

We study the behaviors of magnetization, price, and profit profiles in ring networks in the presence of the external magnetic field. The Ising model is used to determine the state of each node, which is mapped to the buy-or-sell state in a financial market, where +1 is identified as the buying state, and −1 as the selling state. Price and profit mechanisms are modeled based on the assumption that price should increase if demand is larger than supply, and it should decrease otherwise. We find that the magnetization can be induced between two rings via coupling links, where the induced magnetization strength depends on the number of the coupling links. Consequently, the price behaves linearly with time, where its rate of change depends on the magnetization. The profit grows like a quadratic polynomial with coefficients dependent on the magnetization. If two rings have opposite direction of net spins, the price flows in the direction of the majority spins, and the network with the minority spins gets a loss in profit