Time-of-flight analysis of charge mobility in a Cu-phthalocyanine-based discotic liquid crystal semiconductor

We used a time-of-flight method to study the charge carrier mobility properties of a molecular-aligned discotic liquid crystal semiconductor based on Cu-phthalocyanine. The heated isotropic-phase semiconductor material was sandwiched between transparent electrodes coated onto glass substrates without conventional alignment layers. This was then cooled, and a discotic liquid crystal semiconductor cell was obtained, which we used to make mobility measurements. The material had a fixed molecular alignment due to the supercooling of the hexagonal columnar mesophase. It was clarified that the carrier mobility for electrons was as high as it was for holes at room temperature. The maximum value of negative charge mobility reached 2.60x10(-3) cm(2)/V s, although negative carrier mobility is often much lower than positive carrier mobility in other organic semiconductors, including conventional Cu-phthalocyanine vacuum-deposited films.ArticleAPPLIED PHYSICS LETTERS. 85(16):3474-3476 (2004)journal articl

Time-of-flight analysis of charge mobility in a Cu-phthalocyanine-based discotic liquid crystal semiconductor

We used a time-of-flight method to study the charge carrier mobility properties of a molecular-aligned discotic liquid crystal semiconductor based on Cu-phthalocyanine. The heated isotropic-phase semiconductor material was sandwiched between transparent electrodes coated onto glass substrates without conventional alignment layers. This was then cooled, and a discotic liquid crystal semiconductor cell was obtained, which we used to make mobility measurements. The material had a fixed molecular alignment due to the supercooling of the hexagonal columnar mesophase. It was clarified that the carrier mobility for electrons was as high as it was for holes at room temperature. The maximum value of negative charge mobility reached 2.60x10(-3) cm(2)/V s, although negative carrier mobility is often much lower than positive carrier mobility in other organic semiconductors, including conventional Cu-phthalocyanine vacuum-deposited films.ArticleAPPLIED PHYSICS LETTERS. 85(16):3474-3476 (2004)journal articl

Origin of the Weak Pseudo-gap Behaviors in Na_{0.35}CoO_2: Absence of Small Hole Pockets

We analyze the ``normal electronic states'' of Na_{0.35}CoO_2 based on the effective d-p model with full d-orbital freedom using the fluctuation-exchange (FLEX) approximation. They sensitively depend on the topology of the Fermi surfaces, which changes as the crystalline electric splitting (CES) due to the trigonal deformation. We succeed in reproducing the weak pseudo-gap behaviors in the density of states (DOS) and in the uniform magnetic susceptibility below 300K, assuming that six small hole-pockets predicted by LDA band calculations are absent. When they exist, on the contrary, then ``anti-pseudo-gap behaviors'' should inevitably appear. Thus, the present study strongly supports the absence of the small hole-pockets in Na_{0.35}CoO_2, as reported by recent ARPES measurements. A large Fermi surface around the \Gamma-point would account for the superconductivity in water-intercalated samples.Comment: 5pages, to appear in J. Phys. Soc. Jpn. Vol.74 (2005) No.

Theory of adsorbate induced surface reconstruction on W(100)

We report results of a theoretical study on an adsorbate induced surface reconstruction. Hydrogen adsorption on a W(100) surface causes a switching transition in the symmetry of the displacements of the W atoms within the ordered c(2x2) phase. This transition is modeled by an effective Hamiltonian, where the hydrogen degrees of freedom are integrated out. Based on extensive Monte Carlo renormalisation group calculations we show that the switching transition is of second order at high temperatures and of first order at low temperatures. This behavior is qualitatively explained in terms of an XY model where there is an interplay between four and eight fold anisotropy fields. We also compare the calculated phase diagrams with a simple mean field theory.Comment: CSC Preprint, 31 pages (plain TeX file, no figures

Gutzwiller Method for an Extended Periodic Anderson Model with the c-f Coulomb Interaction

We study an extended periodic Anderson model with the Coulomb interaction Ucf between conduction and f electrons by the Gutzwiller method. The crossovers between the Kondo, intermediate-valence, and almost empty f-electron regimes become sharper with Ucf, and for a sufficiently large Ucf, become first-order phase transitions. In the Kondo regime, a large enhancement in the effective mass occurs as in the ordinary periodic Anderson model without Ucf. In addition, we find that a large mass enhancement also occurs in the intermediate-valence regime by the effect of Ucf.Comment: 9 pages, 7 figure

From mixed valence to the Kondo lattice regime

Many heavy fermion materials are known to crossover from the Kondo lattice regime to the mixed-valent regime or vice-versa as a function of pressure or doping. We study this crossover theoretically by employing the periodic Anderson model within the framework of the dynamical mean field theory. Changes occurring in the dynamics and transport across this crossover are highlighted. As the valence is decreased (increased) relative to the Kondo lattice regime, the Kondo resonance broadens significantly, while the lower (upper) Hubbard band moves closer to the Fermi level. The resistivity develops a two peak structure in the mixed valent regime: a low temperature coherence peak and a high temperature 'Hubbard band' peak. These two peaks merge yielding a broad shallow maximum upon decreasing the valence further. The optical conductivity, likewise exhibits an unusual absorption feature (shoulder) in the deep mid-infrared region, which grows in intensity with decreasing valence. The involvement of the Hubbard bands in dc transport, and of the effective f-level in the optical conductivity are shown to be responsible for the anomalous transport properties. A two-band hybridization-gap model, which neglects incoherent effects due to many-body scattering, commonly employed to understand the optical response in these materials is shown to be inadequate, especially in the mixed-valent regime. Comparison of theory with experiment carried out for (a) dc resistivities of CeRhIn5, Ce2Ni3Si5, CeFeGe3 and YbIr2Si2; (b) pressure dependent resistivity of YbInAu2 and CeCu6; and (c) optical conductivity measurements in YbIr2Si2 yields excellent agreement.Comment: 24 pages,12 figures,accepted in J.Phys.: Condens. Matte