Growth mode evolution during homoepitaxy of GaAs (001)

Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular‐beam epitaxy. After an initial transient regime, indicated by reflection high‐energy electron diffraction oscillations, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the growth mode can be termed generalized step flow.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70664/2/APPLAB-64-4-484-1.pd

Large scale surface structure formed during GaAs (001) homoepitaxy

Atomic force microscopy studies have been performed on GaAs (001) homoepitaxy films grown by molecular beam epitaxy. Multilayered features are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased these features grow in all dimensions but the angle of inclination remains approximately constant at 1°. The mounding does not occur on surfaces grown in step flow. We propose that the multilayered features are an unstable growth mode which relies on island nucleation and the presence of a step edge barrier.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70983/2/APPLAB-64-7-860-1.pd

The dynamical transition to step-flow growth during molecular-beam epitaxy of GaAs(00l)

Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. Images show that in the earliest stages of deposition the morphology oscillates between one with two-dimensional islands and flat terraces. After the initial transient regime, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the growth mode can be termed step flow. Comparison with RHEED shows that there is a direct correspondence between the surface step density and the RHEED specular intensity. Furthermore, thick films (up to 1450 monolayers) display a constant or slowly increasing surface roughness consistent with long adatom diffusion lengths and limited upward diffusion.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/30389/1/0000007.pd

An STM study of molecular-beam epitaxy growth of GaAs

Scanning tunneling microscopy has been used to investigate molecular-beam epitaxy growth of GaAs. By quenching the sample during deposition, we have imaged the GaAs(001) surface as it appeared during growth. Large scale images of the surface have been obtained at coverages varying from 0.25 to 1500 layers.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/31006/1/0000681.pd

Low dielectric constant a-SiOC:H films as copper diffusion barrier

10.1063/1.1530722Journal of Applied Physics9321241-1245JAPI

The surface evolution and kinetic roughening during homoepitaxy of GaAs (001)

Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. Images show that in the earliest stages of deposition the morphology oscillates between one with two-dimensional islands and flat terraces. After the initial transient regime, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the grown mode can be termed step flow. Comparison with reflection high-energy electron-diffraction (RHEED) shows that there is a direct correspondence between the surface step density and the RHEED specular intensity. Thick films (up to 1450 monolayers) display a slowly-increasing surface roughness. Analysis of the scaling properties and comparison with theories of film growth will be made.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/31695/1/0000631.pd