gg-factor engineering with InAsSb alloys toward zero band gap limit

Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $g\approx -90$ at the minimum band gap of $\sim 0.1$ eV, which is almost twice that in bulk InSb is found. Further analysis to the zero gap limit reveals a possible gigantic $g$-factor of $g\approx -200$ with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a $g$-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide new insights into realizing large $g$-factors and spin polarized states in semiconductors and topological materials

GaSb-Based Type I Quantum-Well Light-Emitting Diode Addressable Array Operated at Wavelengths Up to 3.66 m

This basic research into mid-IR LEDs as an emitter array combines the advantages of high brightness, high dynamic range, uniformity, temperature stability, fast modulation (high frame rate), low cost, and high reliability. Type II interband cascade (IC) LEDs operating in the spectral range 3-5 m were successfully used for array fabrication The Type I mid-IR GaSb-based LED with a quantum-well active region has demonstrated high output power and internal efficienc

Different components of far-infrared photoresponse of quantum Hall detectors

We have performed time-resolved measurements of the far- infrared photoresponse of two-dimensional electron systems in the quantum Hall regime. The photoresponse consists of two equally important components: the longitudinal component, caused by the photoinduced change of the longitudinal resistance R-xx, and the transversal component, caused by the photoinduced Hall currents and by the photoinduced change of R- xy. Both these components are connected with two mechanisms of the photoresponse: a nonresonant bolometric, and a cyclotron- resonant contribution. (C) 2002 American Institute of Physics