Sex and gender differences in acute stroke care: metrics, access to treatment and outcome. A territorial analysis of the Stroke Code System of Catalonia

Introduction: Previous studies have reported differences in the management and outcome of women stroke patients in comparison with men. We aim to analyze sex and gender differences in the medical assistance, access to treatment and outcome of acute stroke patients in Catalonia. Patients and methods: Data were obtained from a prospective population-based registry of stroke code activations in Catalonia (CICAT) from January/2016 to December/2019. The registry includes demographic data, stroke severity, stroke subtype, reperfusion therapy, and time workflow. Centralized clinical outcome at 90 days was assessed in patients receiving reperfusion therapy. Results: A total of 23,371 stroke code activations were registered (54% men, 46% women). No differences in prehospital time metrics were observed. Women more frequently had a final diagnosis of stroke mimic, were older and had a previous worse functional situation. Among ischemic stroke patients, women had higher stroke severity and more frequently presented proximal large vessel occlusion. Women received more frequently reperfusion therapy (48.2% vs 43.1%, p < 0.001). Women tended to present a worse outcome at 90 days, especially for the group receiving only IVT (good outcome 56.7% vs 63.8%; p < 0.001), but not for the group of patients treated with IVT + MT or MT alone, although sex was not independently associated with clinical outcome in logistic regression analysis (OR 1.07; 95% CI, 0.94–1.23; p = 0.27) nor in the analysis after matching using the propensity score (OR 1.09; 95% CI, 0.97–1.22). Discussion and conclusion: We found some differences by sex in that acute stroke was more frequent in older women and the stroke severity was higher. We found no differences in medical assistance times, access to reperfusion treatment and early complications. Worse clinical outcome at 90 days in women was conditioned by stroke severity and older age, but not by sex itself

The Raise of Crowdfunding in the Cultural Field. A New Architecture for Shared Production or Simply a Reformulation of Fragility and Precariousness?

Crowdfunding experiences, especially in the cultural field, have expanded in an unthinkable manner in the last few years. This phenomenon is linked to the major transformation of the Internet in many aspects of social, economic and political activity. Together with private and commercial production, new spaces for production and social exchange have been created. However, it is crucial to verify the degree to which these new spaces of technical and economic feasibility find the right results in social return and its practices. Does the rise in crowdfunding in the cultural field represent a new-shared production or is it merely a fragile and precarious reformulation of the sector? By analysing the activities of several crowdfunding platforms this article answers these questions and proposes four dimensions to study the social return and public value of crowdfunding. We conclude that crowdfunding not only incorporates innovation to the wellestablished intermediary dynamics of the cultural sector, but can also reproduce the institutional rules and status quo

Proximitat, cultura i tercer sector a Barcelona

Aquest és un llibre que ens parla de ciutat, de cultura i del valor públic de les polítiques culturals pensades i fetes des de la proximitat. Som en un moment de canvi d´època. Molts dels conceptes i paràmetres amb què ens movíem necessiten canviar. Un dels més evidents és el que expressa el binomi públic-privat. Habitualment s´ha confós públic amb &quot;estatal&quot; o institucional, i privat amb mercantil. En el llibre es pot constatar que això ja no és del tot cert. Hi ha entitats, grups i persones que reclamen que la seva feina cultural i social es desenvolupa a l´esfera pública, i no per això són &quot;institucionals&quot;. I tampoc se senten &quot;mercat&quot;, ja que volen contribuir a la igualtat i la cohesió social des de lògiques no mercantils. Aquest llibre aplega els conceptes i experiències més destacables del que és la realitat cultural, política i social d´un sector d´intervenció que reivindica el seu paper de connector entre dinàmiques socials i intervenció cultural. Velles i noves organitzacions, xarxes socials i dinàmiques molt concretes es combinen, mostrant un univers molt present però poc visible que fa de Barcelona un gran espai de xarxes i d´interaccions que aquesta obra pretén contribuir a donar conèixer i valorar. ¿Com contribueixen a la reconfiguració de l´espai públic? ¿Proximitat i acció social és contradictori amb excel·lència? Aquestes són algunes de les preguntes que el llibre vol ajudar a respondre

A new method for quickly evaluating reversible and permanent components of the BTI degradation

International audienceA new method denoted SRP is proposed to quicklyevaluate reversible and permanent components responsible forBTI degradation. It is based on a particular normalization ofNBTI drifts measured during DC stress and recovery. The originof this SRP is then highlighted by a complete modeling of NBTIdataset. It actually arises from the presence of two trappopulations with much different capture and emission timeconstants. The technique which can only be seen as a\mathematical\ trick is very suitable to address the sensitivity ofseveral process steps like nitridation to BTI. It can also provide asimple analytical compact model easy to implement in a SPICElike simulator to analyze BTI reliability at circuit level

Impact Of Single Charge Trapping On The Variability of Ultra-Scaled Planar And Tri-Gate FDSOI MOSFETs: Experiment vs Simulation

International audienc

Accurate modeling of dynamic variability of SRAM cell in 28 nm FDSOI technology

session 2: MemoryInternational audienceThe paper presents a new methodology to model the dynamic variability of SRAM cell in 28nm FDSOI technology. This approach can be easily integrated into SPICE and used for circuit degradation simulation. It is based on two successful models that showed good correlation with experimental data. Using only stress measurements made at transistors level we are able to simulate the degradation obtained on SRAM circuit level. Based on this methodology, fast BTI stress measurements were carried out on SRAM-sized MOSFETs using a fast measure/stress/measure sequences. Using these measurements at transistor level we could validate our modeling methodology by comparing this analytical approach to experimental data. Finally, simulations results obtained on a 0.197 μm 2 SRAM cell and calibrated to pull-up and pull-down stress measurements are presented. The bit-cell read margin is evaluated using the Supply Read Retention Voltage (SRRV) metric and resulting ΔSRRV cumulative distributions obtained from 4000 MC simulations are shown

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology

session 2F: Process IntegrationInternational audienceIn this paper, we investigate the potential of strained Silicon-On-Insulator (sSOI) for the future advanced CMOS nodes. Strained FDSOI depicts a 30% higher performance in term of ION/IOFF thanks to higher mobility. Changes in band structure reduce the gate leakage and devices depict superior HC reliability at same drive current. The better interface quality with sSi layer leads to higher immunity to dangling bonds generation. Strain integration does not affect BTI and breakdown reliability

Impact of dynamic variability on SRAM functionality and performance in nanoscaled CMOS technologies.

session 4A: Circuits reliability(#4A.6)International audienc

Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias

International audienceIn this paper, we investigate the potential of strained Silicon-On-Insulator for the future advanced CMOS nodes. Strained FDSOI devices not only exhibit a 30% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current regardless of the back bias

A new gate pattern measurement for evaluating the BTI degradation in circuit conditions

session 5D: circuit aging simulation/circuits reliabilityInternational audienceIn this paper, we develop a new “recovery free” measurement technique able to apply arbitrary NBTI stress patterns of `1' & `0' on the gate of the transistor. This technique is very useful to evaluate the BTI degradation seen by the device in circuit conditions. With this method, it is shown that the NBTI shift does not depend on the bit arrangement within a sequence for bit length <;1μs but only on the overall circuit activity. Such a result validates the standard approach based on regular AC stress to address NBTI concern at circuit level. Furthermore, all the revisited results obtained with our new measurement technique are successfully modeled using a dedicated numerical RC model. It gives new insights on the physical mechanisms responsible for NBTI in advanced nodes