New geometries for high spatial resolution hall probes

The Hall response function of symmetric and asymmetric planar Hall effect devices is investigated by scanning a magnetized tip above a sensor surface while simultaneously recording the topography and the Hall voltage. Hall sensor geometries are tailored using a Focused Ion Beam, in standard symmetric and new asymmetric geometries. With this technique we are able to reduce a single voltage probe to a narrow constriction 20 times smaller than the other device dimensions. We show that the response function is peaked above the constriction, in agreement with numerical simulations. The results suggest a new way to pattern Hall sensors for enhanced spatial resolution.Comment: 12 pages, 5 figures, submitted to Journal of Applied Physic

Fabrication of bismuth nanowires with a silver nanocrystal shadowmask

We fabricated bismuth (Bi) nanowires with low energy electron beam lithography using silver (Ag) nanocrystal shadowmasks and a subsequent chlorine reactive ion etching. Submicron-size metal contacts on the single Bi nanowire were successfully prepared by in situ focused ion beam metal deposition for transport measurements. The temperature dependent resistance measurements on the 50 nm wide Bi nanowires showed that the resistance increased with decreasing temperature, which is characteristic of semiconductors and insulators