Surface photo-absorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy

Journal ArticleThe surface structure of Ga0.52In0.48P was studied by surface photoabsorption. An absorption peak due to P dimers on Ga0.52In0.48P was observed at 400 nm, shorter than for InP (430 nm). From comparison with results for GaAs and InP, the data are interpreted to indicate that at a tertiarybutylphosphine (TBP) pressure of 50 Pa for temperatures below 670 °C, the P-stabilized surface has P dimers aligned along the (1 10) direction, i.e., it has a 2 4 -like structure. Above 670 °C, the 400 nm peak due to the P-dimer structure disappears because of P desorption from the surface at this TBP partial pressure. Epitaxial Ga0.52In0.48P layers grown using TBP, trimethylgallium and ethyldimethylindium are nearly disordered at 670 °C and highly ordered at 620 °C. These data suggest a correlation between surface structure and orderin

Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP

Journal ArticleCu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The degree of order is a strong function of the input partial pressure of the phosphorus precursor, i.e., the V/III ratio, during growth. By observing the surface structure using in situ surface photoabsorption ~SPA! measurements, the concentration of @1 ¯ 10#-oriented P dimers, characteristic of the ~234! reconstructed surface, has been measured as a function of the growth conditions. For growth at 670 °C, the P-dimer concentration is found to increase systematically as the input tertiarybutylphosphine pressure is increased from 10 to 200 Pa. This corresponds directly to a monotonic increase in the degree of order, measured using transmission electron microscopy and low-temperature photoluminescence. These data strongly suggest that the ~234! surface reconstruction is necessary for formation of the Cu-Pt structure. The step structure at the surface was also observed for these layers using atomic force microscopy. For high V/III ratios the structure of the layers grown on exactly ~001! oriented GaAs substrates consists of islands surrounded mainly by bilayer ~5.7 Å! steps. As the V/III ratio is reduced, the step height transforms to 2.8 Å ~one monolayer!

Correlation between surface structure and ordering in GaInP

Journal ArticleGa and In atoms in Ga0.52In0.48P layers spontaneously segregate to form alternating In- and Ga-rich {111} monolayers during organometallic vapor phase epitaxial (OMVPE) growth on (001) oriented GaAs substrates, thus forming the CuPt ordered structure. This ordering phenomenon is believed to be driven by surface processes, although little direct experimental information is available. This work presents evidence, based on surface photoabsorption data, that [1-bar 10] oriented P dimers are present on the surface during OMVPE growth using trimethylgallium and ethyldimethylindium combined with tertiarybutylphosphine, suggesting a (2 × 4)-like surface reconstruction. Furthermore, when the growth temperature is increased above 620 °C, with other parameters constant, both the concentration of these P dimers and the degree of order are observed to decrease. A similar correlation of decreased P-dimer concentration with decreased degree of order is observed for decreases in V/III ratio. Thus, the changes in order parameter for variations in temperature and TBP flow rate are found to be closely correlated with the changes in the order parameter. A third parameter studied was the misorientation of the substrate from (001) toward either the {111}A or {111}B planes. The concentration of P dimers decreased as the misorientation increased in either direction. The degree of order was also observed to generally decrease, supporting the connection between surface reconstruction and ordering. However, the difference in order parameter observed for the two misorientation directions suggests the importance of a second parameter, the step structure, itself. For exactly (001) oriented substrates the surface was observed, using high resolution atomic force microscopy, to consist of islands, elongated in the [110] direction, with heights of 30-60 Å. Monolayer steps are observed for some growth conditions, but for most conditions the boundaries are formed exclusively of bilayer (5.7 Å) steps. Predominantly monolayer steps are formed for low V/III ratios and bilayer steps for high V/III ratios

Surface photoabsorption study of the effect of substrate misorientation on ordering in GaInP

Journal ArticleSubstrate orientation strongly affects Cu-Pt ordering in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. In situ surface photoabsorption SPA measurements were used to measure the concentration of 1 10-oriented P dimers, characteristic of the 2 4 reconstructed surface, as a function of substrate misorientation from 001. For substrates misoriented toward either 110 or 111 A or 1 10 or 111 B, the P-dimer concentration is found to decrease systematically as the misorientation angle increases from 0° to 15.8° at 620 °C with tertiarybutylphosphine TBP partial pressures of 10, 50, and 200 Pa. The P-dimer concentrations on substrates misoriented toward 110 are higher than for those misoriented toward 1 10. The Ga0.5In0.5P layers were found to form the Cu-Pt structure during growth. The degree of order, determined from 20 K photoluminescence measurements, shows a strong correlation with the concentration of 1 10-oriented P dimers. The data also clearly show the effect of step structure on Cu-Pt ordering. They indicate that 110 steps formed by misorientation toward 1 10 enhance ordering while 1 10 steps formed by misorientation toward 110 retard ordering

Electron mobility in compensated GaAs and AlGaAs

Journal ArticleThe dependence of electron mobility on temperature in GaAs and Al Ga As indicates that for cimpensated material a term having causes a significant reduction in the mobility measured at high temperatures. The magnitude of the term in mobility, denoted is found to be linearly proportional to the compensating acceptor concentration over a range of more than two orders of magnitude in samples with no intentional doping where carbon is the major compensating acceptor. Intentional compensation using Ge and Zn is found to have no effect on. Illumination has no effect on . Such illumination is demonstrated to significantly reduce the size of space-charge layers at the interface. Thus, the modiblity is not due to scattering by space-charge regions as has been previously assumed. The acceptor C, or an associate involving C, is concluded to be the scattering center responsible for. The effect may be due to the short-range central-cell potential resulting from the large electronegativity difference between C and As for which it substitutes in the lattice

Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP

Journal ArticleSurface photoabsorption (SPA) measurements were used to clarify the Cu-Pt ordering mechanism in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The Cu-Pt ordering is strongly affected by the growth temperature and the input partial pressure of the phosphorus precursor, i.e., the V/III ratio. SPA was used to measure the concentration of [1-bar 10]-oriented phosphorus dimers on the surface, which are characteristics of the (2×4) reconstruction, as a function of the growth temperature and V/III ratio. The degree of order decreases markedly with increasing growth temperature above 620 °C at a constant V/III ratio of 40 [tertiarybutylphosphine (TBP) partial pressure of 50 Pa]. This corresponds directly to a decrease of the P-dimer concentration on the surface. Below 620 °C, the degree of order decreases as the growth temperature decreases, even though the concentration of P dimers increases. This is most likely due to the slow migration of adatoms on the surface during growth. The degree of order is found to decrease monotonically with decreasing V/III ratio in the range from 160 to 8 at 670 °C. This corresponds directly to the decrease of the P-dimer concentration on the surface. The direct correlation of the [1-bar 10]-oriented phosphorus dimer concentration and the degree of order with changes in both temperature (>=620 °C) and V/III ratio suggests that the (2×4) surface reconstruction is necessary to form the Cu-Pt structure, in agreement with published theoretical studies. The physical structure of the surface of these Ga0.5In0.5P layers was also characterized, using atomic force microscopy. For growth at 670 °C and a V/III ratio of 160, the structure of the layers growth on exactly (001) oriented GaAs substrates consists of islands surrounded mainly by bilayer (approximately 6 Å) steps. As the V/III ratio is reduced, the step height transforms to one monolayer. Exclusively monolayer steps are formed at a V/III ratio of 8. This is interpreted in terms of the stabilization of the bilayers by formation of the (2×2) reconstruction on the (111)B step face at high V/III ratios

Radiative pair transitions in p-type ZnSe:Cu crystals

Journal ArticleShallow levels with an ionization energy of 0.012 eV play an important role in the photoelectronic properties of p-type ZnSe:Cu crystals. These levels exhibit the characteristics of the higher-lying member of an imperfection pair involved in luminescence emission, as well as of a trap determining long-time decay rates of luminescence and photoconductivity, and of a center causing low-temperature reduction of free-electron lifetime

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi2Se3 give rise to bulk conduction, which masks the transport properties of the surface states. We have therefore developed a new route for the synthesis of topological insulator nanostructures using metalorganic chemical vapour deposition (MOCVD). MOCVD allows for control of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary the Se/Bi flux ratio, growth time, and substrate temperature, and observe morphological changes which indicate a growth regime in which nanoribbon formation is limited by the Bi precursor mass-flow. MOCVD growth of Bi2Se3 nanostructures occurs via a distinct growth mechanism that is nucleated by gold nanoparticles at the base of the nanowire. By tuning the reaction conditions, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets.Comment: Related papers at http://pettagroup.princeton.ed

V1647 Ori (IRAS 05436-0007) in Outburst: the First Three Months

We report on photometric (BVRIJHK) and low dispersion spectroscopic observations of V1647 Ori, the star that drives McNeil's Nebula, between 10 February and 7 May 2004. The star is photometrically variable atop a general decline in brightness of about 0.3-0.4 magnitudes during these 87 days. The spectra are featureless, aside from H-alpha and the Ca II infrared triplet in emission, and a Na I D absorption feature. The Ca II triplet line ratios are typical of young stellar objects. The H-alpha equivalent width may be modulated on a period of about 60 days. The post-outburst extinction appears to be less than 7 mag. The data are suggestive of an FU Orionis-like event, but further monitoring will be needed to definitively characterize the outburst.Comment: Accepted for publication in the Astronomical Journa

Development and operation of research-scale III-V nanowire growth reactors

III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy (MOVPE) reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2 X 10$^{-9}$ Torr. A load-lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm$^2$(V.s).Comment: Related papers at http://pettagroup.princeton.ed