59 research outputs found

    Structural Control of Metamaterial Oscillator Strength and Electric Field Enhancement at Terahertz Frequencies

    Full text link
    The design of artificial nonlinear materials requires control over the internal resonant charge densities and local electric field distributions. We present a MM design with a structurally controllable oscillator strength and local electric field enhancement at terahertz frequencies. The MM consists of a split ring resonator (SRR) array stacked above an array of nonresonant closed conducting rings. An in-plane, lateral shift of a half unit cell between the SRR and closed ring arrays results in a decrease of the MM oscillator strength by a factor of 4 and a 40% change in the amplitude of the resonant electric field enhancement in the SRR capacitive gap. We use terahertz time-domain spectroscopy and numerical simulations to confirm our results and we propose a qualitative inductive coupling model to explain the observed electromagnetic reponse.Comment: 11 pages, 5 figure

    Terahertz Plasmonic Structure With Enhanced Sensing Capabilities

    Get PDF

    Decoupling Crossover in Asymmetric Broadside Coupled Split Ring Resonators at Terahertz Frequencies

    Get PDF
    We investigate the electromagnetic response of asymmetric broadside coupled split ring resonators (ABC-SRRs) as a function of the relative in-plane displacement between the two component SRRs. The asymmetry is defined as the difference in the capacitive gap widths (\Delta g) between the two resonators comprising a coupled unit. We characterize the response of ABC-SRRs both numerically and experimentally via terahertz time-domain spectroscopy. As with symmetric BC-SRRs (\Delta g=0 \mu m), a large redshift in the LC resonance is observed with increasing displacement, resulting from changes in the capacitive and inductive coupling. However, for ABC-SRRs, in-plane shifting between the two resonators by more than 0.375Lo (Lo=SRR sidelength) results in a transition to a response with two resonant modes, associated with decoupling in the ABC-SRRs. For increasing \Delta g, the decoupling transition begins at the same relative shift (0.375Lo), though with an increase in the oscillator strength of the new mode. This strongly contrasts with symmetric BC-SRRs which present only one resonance for shifts up to 0.75Lo. Since all BC-SRRs are effectively asymmetric when placed on a substrate, an understanding of ABC-SRR behavior is essential for a complete understanding of BC-SRR based metamaterials

    Three-dimensional broadband tunable terahertz metamaterials

    Get PDF
    We present optically tunable magnetic 3D metamaterials at terahertz (THz) frequencies which exhibit a tuning range of ~30% of the resonance frequency. This is accomplished by fabricating 3D array structures consisting of double-split-ring resonators (DSRRs) on silicon-on-sapphire, fabricated using multilayer electroplating. Photoexcitation of free carriers in the silicon within the capacitive region of the DSRR results in a red-shift of the resonant frequency from 1.74 THz to 1.16 THz. The observed frequency shift leads to a transition from a magnetic-to-bianisotropic response as verified through electromagnetic simulations and parameter retrieval. Our approach extends dynamic metamaterial tuning to magnetic control, and may find applications in switching and modulation, polarization control, or tunable perfect absorbers.Comment: 5page

    Nonlinear terahertz metamaterials via field-enhanced carrier dynamics in GaAs

    Full text link
    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ~20 - 160 kV/cm drives intervalley scattering. This reduces the carrier mobility and enhances the SRR LC response due to a conductivity decrease in the doped thin film. Above ~160 kV/cm, electric field enhancement within the SRR gaps leads to efficient impact ionization, increasing the carrier density and the conductivity which, in turn, suppresses the SRR resonance. We demonstrate an increase of up to 10 orders of magnitude in the carrier density in the SRR gaps on semi-insulating GaAs substrate. Furthermore, we show that the effective permittivity can be swept from negative to positive values with increasing terahertz field strength in the impact ionization regime, enabling new possibilities for nonlinear metamaterials.Comment: 5 pages, 4 figure
    • …
    corecore