Integrated Multi-Terminal Devices Consisting of Carbon Nanotube, Few-Layer Graphene Nanogaps and Few-Layer Graphene Nanoribbons Having Crystallographically Controlled Interfaces

The present invention relates to atomically-thin channel materials with crystallographically uniform interfaces to atomically-thin commensurate graphene electrodes and/or nanoribbons separated by nanogaps that allow for nanoelectronics based on quantum transport effects and having significantly improved contact resistances

Crystallographically-Oriented Carbon Nanotubes Grown on Few-Layer Graphene Films

A thermal and electrical conducting apparatus includes a few-layer graphene film having a thickness D where D≦1.5 nm and a plurality of carbon nanotubes crystallographically aligned with the few-layer graphene film

Electronic Device Incorporating Memristor Made From Metallic Nanowire

An electronic device includes a first electrode, a second electrode and a nanowire connected between the first and second electrodes to allow electric current flow. The nanowire is made from a conductive material exhibiting a variable resistance due to electromigration. The nanowire is repeatably switchable between two states. A voltage clamp operates through feedback control to maintain the voltage across the nanowire and prevent thermal runaway

High On/Off Ratio Graphene Nanoconstriction Field Effect Transistor

We report a method to pattern monolayer graphene nanoconstriction field effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback controlled electromigration (FCE) to form a constriction in a gold etch mask that is first patterned using conventional lithographic techniques. The use of FCE allows the etch mask to be patterned on size scales below the limit of conventional nanolithography. We observe the opening of a confinement-induced energy gap as the NCFET width is reduced, as evidenced by a sharp increase in the NCFET on/off ratio. The on/off ratios we obtain with this procedure can be larger than 1000 at room temperature for the narrowest devices; this is the first report of such large room temperature on/off ratios for patterned graphene FETs.Comment: 18 pages, 6 figures, to appear in Smal

Gate Coupling to Nanoscale Electronics

The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the singlemolecule ( ~ 1 nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that nonuniform tapered electrodes yield a significant 3 orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

Electrostatic Force Microscopy and Electrical Isolation of Etched Few-Layer Graphene Nano-Domains

Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1×1012 Ω with a corresponding gap resistivity greater than about 3×1014 Ω⋅nm . This extremely large gap resistivity suggests that catalytic etch tracks within few-layer graphene samples are sufficient for providing electrical isolation between separate nano-domains that could permit their use in constructing atomically thin nanogap electrodes, interconnects, and nanoribbons

Polarization reorientation in ferroelectric lead zirconate titanate thin films with electron beams

Ferroelectric domain patterning with an electron beam is demonstrated. Polarization of lead zirconate titanate thin films is shown to be reoriented in both positive and negative directions using piezoresponse force and scanning surface potential microscopy. Reorientation of the ferroelectric domains is a response to the electric field generated by an imbalance of electron emission and trapping at the surface. A threshold of 500 µC/cm2 and a saturation of 1500 µC/cm2 were identified. Regardless of beam energy, the polarization is reoriented negatively for beam currents less than 50 pA and positively for beam currents greater than 1 nA

Graphene Used as a Lateral Force Microscopy Calibration Material in the Low-Load Non-Linear Regime

A lateral force microscopy (LFM) calibration technique utilizing a random low-profile surface is proposed that is successfully employed in the low-load non-linear frictional regime using a single layer of graphene on a supporting oxide substrate. This calibration at low loads and on low friction surfaces like graphene has the benefit of helping to limit the wear of the LFM tip during the calibration procedure. Moreover, the low-profiles of the calibration surface characteristic of these layered 2D materials, on standard polished oxide substrates, result in a nearly constant frictional, adhesive, and elastic response as the tip slides over the surface, making the determination of the calibration coefficient robust. Through a detailed calibration analysis that takes into account non-linear frictional response, it is found that the adhesion is best described by a nearly constant vertical orientation, rather than the more commonly encountered normally directed adhesion, as the single asperity passes over the low-profile graphene-coated oxide surface

Gate Coupling to Nanoscale Electronics

The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the single-molecule (~1nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that non-uniform tapered electrodes yield a significant three orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

Real-Time TEM Imaging of the Formation of Crystalline Nanoscale Gaps

We present real-time transmission electron microscopy of nanogap formation by feedback controlled electromigration that reveals a remarkable degree of crystalline order. Crystal facets appear during feedback controlled electromigration indicating a layer-by-layer, highly reproducible electromigration process avoiding thermal runaway and melting. These measurements provide insight into the electromigration induced failure mechanism in sub-20 nm size interconnects, indicating that the current density at failure increases as the width decreases to approximately 1 nm