12 research outputs found

    Fast sensing of double-dot charge arrangement and spin state with an rf sensor quantum dot

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    Single-shot measurement of the charge arrangement and spin state of a double quantum dot are reported, with measurement times down to ~ 100 ns. Sensing uses radio-frequency reflectometry of a proximal quantum dot in the Coulomb blockade regime. The sensor quantum dot is up to 30 times more sensitive than a comparable quantum point contact sensor, and yields three times greater signal to noise in rf single-shot measurements. Numerical modeling is qualitatively consistent with experiment and shows that the improved sensitivity of the sensor quantum dot results from reduced screening and lifetime broadening.Comment: related papers at http://marcuslab.harvard.ed

    Dynamic Nuclear Polarization in Double Quantum Dots

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    We theoretically investigate the controlled dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. Three regimes of long-term dynamics are identified, including the build up of a large difference in the Overhauser fields across the dots, the saturation of the nuclear polarization process associated with formation of so-called "dark states," and the elimination of the difference field. We show that in the case of unequal dots, build up of difference fields generally accompanies the nuclear polarization process, whereas for nearly identical dots, build up of difference fields competes with polarization saturation in dark states. The elimination of the difference field does not, in general, correspond to a stable steady state of the polarization process.Comment: 4 pages, 2 figure

    Effect of confinement potential shape on exchange interaction in coupled quantum dots

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    Exchange interaction has been studied for electrons in coupled quantum dots (QD's) by a configuration interaction method using confinement potentials with different profiles. The confinement potential has been parametrized by a two-centre power-exponential function, which allows us to investigate various types of QD's described by either soft or hard potentials of different range. For the soft (Gaussian) confinement potential the exchange energy decreases with increasing interdot distance due to the decreasing interdot tunnelling. For the hard (rectangular-like) confinement potential we have found a non-monotonic behaviour of the exchange interaction as a function of distance between the confinement potential centres. In this case, the exchange interaction energy exhibits a pronounced maximum for the confinement potential profile which corresponds to the nanostructure composed of the small inner QD with a deep potential well embedded in the large outer QD with a shallow potential well. This effect results from the strong localization of electrons in the inner QD, which leads to the large singlet-triplet splitting. Implications of this finding for quantum logic operations have been discussed.Comment: 16 pages, including 11 figure

    Periodic magnetoconductance fluctuations in triangular quantum dots in the absence of selective probing

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    We have studied the magnetoconductance of quantum dots with triangular symmetry and areas down to 0.2 square microns, made in a high mobility two-dimensional electron gas embedded in a GaAs-AlGaAs heterostructure. Semiclassical simulations show that the gross features in the measured magnetoconductance are caused by ballistic effects. Below 1 K we observe a strong periodic oscillation, which may be explained in terms of the Aharanov-Bohm flux quantization through the area of a single classical periodic orbit. From a numerical and analytical analysis of possible trajectories in hard- and soft-walled potentials, we identify this periodic orbit as the enscribed triangle. Contrary to other recent experiments, this orbit is not accessible by classical processes for the incoming collimated beam.Comment: RevTex 8 pages, including 5 postscript figure

    Unexpected features of branched flow through high-mobility two-dimensional electron gases

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    GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with low-temperature mean free paths ranging from microns to hundreds of microns. Here we study how disorder affects the spatial structure of electron transport by imaging electron flow in three different GaAs/AlGaAs 2DEGs, whose mobilities range over an order of magnitude. As expected, electrons flow along narrow branches that we find remain straight over a distance roughly proportional to the mean free path. We also observe two unanticipated phenomena in high-mobility samples. In our highest-mobility sample we observe an almost complete absence of sharp impurity or defect scattering, indicated by the complete suppression of quantum coherent interference fringes. Also, branched flow through the chaotic potential of a high-mobility sample remains stable to significant changes to the initial conditions of injected electrons.Comment: 22 pages, 4 figures, 1 tabl
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