Electronic Structure of Multiple Dots

We calculate, via spin density functional theory (SDFT) and exact diagonalization, the eigenstates for electrons in a variety of external potentials, including double and triple dots. The SDFT calculations employ realistic wafer profiles and gate geometries and also serve as the basis for the exact diagonalization calculations. The exchange interaction J between electrons is the difference between singlet and triplet ground state energies and reflects competition between tunneling and the exchange matrix element, both of which result from overlap in the barrier. For double dots, a characteristic transition from singlet ground state to triplet ground state (positive to negative J) is calculated. For the triple dot geometry with 2 electrons we also find the electronic structure with exact diagonalization. For larger electron number (18 and 20) we use only SDFT. In contrast to the double dot case, the triple dot case shows a quasi-periodic fluctuation of J with magnetic field which we attribute to periodic variations of the basis states in response to changing flux quanta threading the triple dot structure.Comment: 3 pages, 4 figure

Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers

We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density {\it quasi}-two dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the {\it orbital} motion arising from the {\it finite} layer thickness and the large Fermi wavelength of the {\it quasi}-two dimensional system at low carrier densities.Comment: 4 pages with 4 figures. Accepted for Publication in Physical Review Letter

Inhomogeneous Nuclear Spin Flips

We discuss a feedback mechanism between electronic states in a double quantum dot and the underlying nuclear spin bath. We analyze two pumping cycles for which this feedback provides a force for the Overhauser fields of the two dots to either equilibrate or diverge. Which of these effects is favored depends on the g-factor and Overhauser coupling constant A of the material. The strength of the effect increases with A/V_x, where V_x is the exchange matrix element, and also increases as the external magnetic field B_{ext} decreases.Comment: 5 pages, 4 figures (jpg

Gauge invariant grid discretization of Schr\"odinger equation

Using the Wilson formulation of lattice gauge theories, a gauge invariant grid discretization of a one-particle Hamiltonian in the presence of an external electromagnetic field is proposed. This Hamiltonian is compared both with that obtained by a straightforward discretization of the continuous Hamiltonian by means of balanced difference methods, and with a tight-binding Hamiltonian. The proposed Hamiltonian and the balanced difference one are used to compute the energy spectrum of a charged particle in a two-dimensional parabolic potential in the presence of a perpendicular, constant magnetic field. With this example we point out how a "naive" discretization gives rise to an explicit breaking of the gauge invariance and to large errors in the computed eigenvalues and corresponding probability densities; in particular, the error on the eigenfunctions may lead to very poor estimates of the mean values of some relevant physical quantities on the corresponding states. On the contrary, the proposed discretized Hamiltonian allows a reliable computation of both the energy spectrum and the probability densities.Comment: 7 pages, 4 figures, discussion about tight-binding Hamiltonians adde

Semiconductor quantum dots for electron spin qubits

We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for the generation of a local ac magnetic field in the vicinity of the dot. We observe photon-assisted tunnelling as well as pumping due to the ac voltage induced by the ac current driven through a wire in the vicinity of the dot, but no evidence for ESR so far. Analogue concepts for a double quantum dot and the hydrogen molecule are discussed in detail. Our experimental results in laterally coupled vertical double quantum dot device show that the Heitler–London model forms a good approximation of the two-electron wavefunction. The exchange coupling constant J is estimated. The relevance of this system for two-qubit gates, in particular the SWAP operation, is discussed. Density functional calculations reveal the importance of the gate electrode geometry in lateral quantum dots for the tunability of J in realistic two-qubit gates

Theory of spin, electronic and transport properties of the lateral triple quantum dot molecule in a magnetic field

We present a theory of spin, electronic and transport properties of a few-electron lateral triangular triple quantum dot molecule in a magnetic field. Our theory is based on a generalization of a Hubbard model and the Linear Combination of Harmonic Orbitals combined with Configuration Interaction method (LCHO-CI) for arbitrary magnetic fields. The few-particle spectra obtained as a function of the magnetic field exhibit Aharonov-Bohm oscillations. As a result, by changing the magnetic field it is possible to engineer the degeneracies of single-particle levels, and thus control the total spin of the many-electron system. For the triple dot with two and four electrons we find oscillations of total spin due to the singlet-triplet transitions occurring periodically in the magnetic field. In the three-electron system we find a transition from a magnetically frustrated to the spin-polarized state. We discuss the impact of these phase transitions on the addition spectrum and the spin blockade of the lateral triple quantum dot molecule.Comment: 30 pages (one column), 9 figure