Temperature and Field Dependence of the Mobility in Liquid-Crystalline Conjugated Polymer Films

The transport properties of organic light-emitting diodes in which the emissive layer is composed of conjugated polymers in the liquid-crystalline phase have been investigated. We have performed simulations of the current transient response to an illumination pulse via the Monte Carlo approach, and from the transit times we have extracted the mobility of the charge carriers as a function of both the electric field and the temperature. The transport properties of such films are different from their disordered counterparts, with charge carrier mobilities exhibiting only a weak dependence on both the electric field and temperature. We show that for spatially ordered polymer films, this weak dependence arises for thermal energy being comparable to the energetic disorder, due to the combined effect of the electrostatic and thermal energies. The inclusion of spatial disorder, on the other hand, does not alter the qualitative behaviour of the mobility, but results in decreasing its absolute value.Comment: 9 pages, 8 figures, submitted to Phys. Rev.

Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface

We present a closed description of the charge carrier injection process from a conductor into an insulator. Common injection models are based on single electron descriptions, being problematic especially once the amount of charge-carriers injected is large. Accordingly, we developed a model, which incorporates space charge effects in the description of the injection process. The challenge of this task is the problem of self-consistency. The amount of charge-carriers injected per unit time strongly depends on the energy barrier emerging at the contact, while at the same time the electrostatic potential generated by the injected charge- carriers modifies the height of this injection barrier itself. In our model, self-consistency is obtained by assuming continuity of the electric displacement and the electrochemical potential all over the conductor/insulator system. The conductor and the insulator are properly taken into account by means of their respective density of state distributions. The electric field distributions are obtained in a closed analytical form and the resulting current-voltage characteristics show that the theory embraces injection-limited as well as bulk-limited charge-carrier transport. Analytical approximations of these limits are given, revealing physical mechanisms responsible for the particular current-voltage behavior. In addition, the model exhibits the crossover between the two limiting cases and determines the validity of respective approximations. The consequences resulting from our exactly solvable model are discussed on the basis of a simplified indium tin oxide/organic semiconductor system.Comment: 23 pages, 6 figures, accepted to Phys.Rev.

Theory of Umklapp-assisted recombination of bound excitons in Si:P

We present the calculations for the oscillator strength of the recombination of excitons bound to phosphorous donors in silicon. We show that the direct recombination of the bound exciton cannot account for the experimentally measured oscillator strength of the no-phonon line. Instead, the recombination process is assisted by an umklapp process of the donor electron state. We make use of the empirical pseudopotential method to evaluate the Umklapp-assisted recombination matrix element in second-order perturbation theory. Our result is in excellent agreement with the experiment. We also present two methods to improve the optical resolution of the optical detection of the spin state of a single nucleus in silicon.Comment: 9 pages, 6 EPS figures, Revtex

Lattice Relaxation and Charge-Transfer Optical Transitions Due to Self-Trapped Holes in Non-Stoichiometric LaMnO3_3 Crystal

We use the Mott-Littleton approach to evaluate polarisation energies in LaMnO$_3$ lattice associated with holes localized on both Mn$^{3+}$ cation and O$^{2-}$ anion. The full (electronic and ionic) lattice relaxation energy for a hole localized at the O-site is estimated as 2.4 eV which is appreciably greater than that of 0.8 eV for a hole localized at the Mn-site, indicating on the strong electron-phonon interaction in the former case. Using a Born-Haber cycle we examine thermal and optical energies of the hole formation associated with electron ionization from Mn$^{3+}$, O$^{2-}$ and La$^{3+}$ ions in LaMnO$_3$ lattice. For these calculations we derive a phenomenological value for the second electron affinity of oxygen in LaMnO$_3$ lattice by matching the optical energies of La$^{4+}$ and O$^-$ hole formation with maxima of binding energies in the experimental photoemission spectra. The calculated thermal energies predict that the electronic hole is marginally more stable in the Mn$^{4+}$ state in LaMnO$_3$ host lattice, but the energy of a hole in the O$^-$ state is only higher by a small amount, 0.75 eV, rather suggesting that both possibilities should be treated seriously. We examine the energies of a number of fundamental optical transitions, as well as those involving self-trapped holes of Mn$^{4+}$ and O$^-$ in LaMnO$_3$ lattice. The reasonable agreement with experiment of our predicted energies, linewidths and oscillator strengths leads us to plausible assignments of the optical bands observed. We deduce that the optical band near 5 eV is associated with O(2p) - Mn(3d) transition of charge-transfer character, whereas the band near 2.3 eV is rather associated with the presence of Mn$^{4+}$ and/or O$^-$ self-trapped holes in non-stoichiometric LaMnO$_3$ compound.Comment: 18 pages, 6 figures, it was presented partially at SCES-2001 conference in Ann Arbor, Michiga

Structure and vibrational spectra of carbon clusters in SiC

The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via condensation of carbon interstitials, e.g. generated in the course of ion implantation. All considered defect complexes possess localized vibrational modes (LVM's) well above the SiC bulk phonon spectrum. In particular, the compact antisite clusters exhibit high-frequency LVM's up to 250meV. The isotope shifts resulting from a_{13}C enrichment are analyzed. In the light of these results, the photoluminescence centers D_{II} and P-U are discussed. The dicarbon antisite is identified as a plausible key ingredient of the D_{II}-center, whereas the carbon split-interstitial is a likely origin of the P-T centers. The comparison of the calculated and observed high-frequency modes suggests that the U-center is also a carbon-antisite based defect.Comment: 15 pages, 6 figures, accepted by Phys. Rev.

Suppression of carrier induced ferromagnetism by composition and spin fluctuations in diluted magnetic semiconductors

We suggest an approach to account for spatial (composition) and thermal fluctuations in "disordered" magnetic models (e.g. Heisenberg, Ising) with given spatial dependence of magnetic spin-spin interaction. Our approach is based on introduction of fluctuating molecular field (rather than mean field) acting between the spins. The distribution function of the above field is derived self-consistently. In general case this function is not Gaussian, latter asymptotics occurs only at sufficiently large spins (magnetic ions) concentrations $n_i$. Our approach permits to derive the equation for a critical temperature $T_c$ of ferromagnetic phase transition with respect to the above fluctuations. We apply our theory to the analysis of influence of composition fluctuations on $T_c$ in diluted magnetic semiconductors (DMS) with RKKY indirect spin-spin interaction.Comment: 6 pages, 2 figure

The negatively charged nitrogen-vacancy centre in diamond: the electronic solution

The negatively charged nitrogen-vacancy centre is a unique defect in diamond that possesses properties highly suited to many applications, including quantum information processing, quantum metrology, and biolabelling. Although the unique properties of the centre have been extensively documented and utilised, a detailed understanding of the physics of the centre has not yet been achieved. Indeed there persists a number of points of contention regarding the electronic structure of the centre, such as the ordering of the dark intermediate singlet states. Without a sound model of the centre's electronic structure, the understanding of the system's unique dynamical properties can not effectively progress. In this work, the molecular model of the defect centre is fully developed to provide a self consistent model of the complete electronic structure of the centre. The application of the model to describe the effects of electric, magnetic and strain interactions, as well as the variation of the centre's fine structure with temperature, provides an invaluable tool to those studying the centre and a means to design future empirical and ab initio studies of this important defect.Comment: 24 pages, 6 figures, 10 table

Spin-Atomic Vibration Interaction and Spin-Flip Hamiltonian of a Single Atomic Spin in a Crystal Field

We derive the spin-atomic vibration interaction $V_{\rm SA}$ and the spin-flip Hamiltonian $V_{\rm SF}$ of a single atomic spin in a crystal field. We here apply the perturbation theory to a model with the spin-orbit interaction and the kinetic and potential energies of electrons. The model also takes into account the difference in vibration displacement between an effective nucleus and electrons, \Delta {{\boldmath r}}. Examining the coefficients of $V_{\rm SA}$ and $V_{\rm SF}$, we first show that $V_{\rm SA}$ appears for \Delta {{\boldmath r}}$\ne$0, while $V_{\rm SF}$ is present independently of \Delta {{\boldmath r}}. As an application, we next obtain $V_{\rm SA}$ and $V_{\rm SF}$ of an Fe ion in a crystal field of tetragonal symmetry. It is found that the magnitudes of the coefficients of $V_{\rm SA}$ can be larger than those of the conventional spin-phonon interaction depending on vibration frequency. In addition, transition probabilities per unit time due to $V_{\rm SA}$ and $V_{\rm SF}$ are investigated for the Fe ion with an anisotropy energy of $-|D|S_Z^2$, where $D$ is an anisotropy constant and $S_Z$ is the $Z$ component of a spin operator.Comment: 55 pages, 17 figures, to be published in J. Phys. Soc. Jpn. 79 (2010) No. 11, typos correcte