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1 research outputs found
Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO2 interface on silicon
Author
Dimitriadis C
Gaiseanu F
+6Â more
Goustouridis D
Kurger D
Postolache C
Stocmenos J
Tsoi E
Tsoukalas D
Publication venue
'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date
01/01/1997
Field of study
No full text
DSpace@NTUA (National Technical Univ. of Athens)
No full text
