Graphene−Graphite Oxide Field-Effect Transistors

Graphene’s high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO_2 or HfO_2. In contrast, we have studied the use of an ultrathin layered material, graphene’s insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO_2, typically ~1–3 × 10^8 V/m, while its dielectric constant is slightly higher, κ ≈ 4.3

Creation of Prototype Aircrew Protection Equipment Based on Face Anthropometry

The objective of this research is to develop a process which will analyze and group human faces, concentrating on the oxygen mask seal area, into a minimum number of generic yet distinct face types. The shape and size, or form, of the face is described by bending energies. This bending energy provides the features for the grouping of similar face types, while distinguishing representatives for each cluster. The face tariffs are the percentage of faces grouped under a representative face. The representative faces are then transformed Into three-dimensional solids using computer-aided design. A rapid prototype creates the solids or plugs from which MBU-5P masks are made and tested. The two major outcomes of this research are a formal morphological method which allows the comparison between multiple faces, and a process to transform anthropomorphic surfaces into a prototype mask mold

Nano-Scale Strain-Induced Giant Pseudo-Magnetic Fields and Charging Effects in CVD-Grown Graphene on Copper

Scanning tunneling microscopic and spectroscopic (STM/STS) studies of graphene grown by chemical vapor deposition (CVD) on copper reveal that the monolayer carbon structures remaining on copper are strongly strained and rippled, with different regions exhibiting different lattice structures and local electronic density of states (LDOS). The large and non-uniform strain induces pseudo-magnetic field up to ∼ 50 Tesla, as manifested by the integer and fractional pseudo-magnetic field quantum Hall effects (IQHE and FQHE) in the LDOS of graphene. Additionally, ridges appear along the boundaries of different lattice structures, which exhibit excess charging effects. For graphene transferred from copper to SiO_2 substrates after the CVD growth, the average strain and the corresponding charging effects and pseudo-magnetic fields become much reduced. These findings suggest the feasibility of strain-engineering of graphene-based nano-electronics

Graphene as a Platform for Novel Nanoelectronic Devices

Graphene's superlative electrical and mechanical properties, combined with its compatibility with existing planar silicon-based technology, make it an attractive platform for novel nanoelectronic devices. The development of two such devices is reported—a nonvolatile memory element exploiting the nanoscale graphene edge and a field-effect transistor using graphene for both the conducting channel and, in oxidized form, the gate dielectric. These experiments were enabled by custom software written to fully utilize both instrument-based and computer-based data acquisition hardware and provide a simple measurement automation system. Graphene break junctions were studied and found to exhibit switching behavior in response to an electric field. This switching allows the devices to act as nonvolatile memory elements which have demonstrated thousands of writing cycles and long retention times. A model for device operation is proposed based on the formation and breaking of carbon-atom chains that bridge the junctions. Information storage was demonstrated using the concept of rank coding, in which information is stored in the relative conductance of multiple graphene switches in a memory cell. The high mobility and two dimensional nature of graphene make it an attractive material for field-effect transistors. Another ultrathin layered material—graphene's insulating analogue, graphite oxide—was studied as an alternative to bulk gate dielectric materials such as Al2O3 or HfO2. Transistors were fabricated comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. Electron transport measurements reveal minimal leakage through the graphite oxide at room temperature. Its breakdown electric field was found to be comparable to SiO2, typically 1–3 × 108 V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. As nanoelectronics experiments and their associated instrumentation continue to grow in complexity the need for powerful data acquisition software has only increased. This role has traditionally been filled by semiconductor parameter analyzers or desktop computers running LabVIEW. Mezurit 2 represents a hybrid approach, providing basic virtual instruments which can be controlled in concert through a comprehensive scripting interface. Each virtual instrument's model of operation is described and an architectural overview is provided.</p

The Kepler End-to-End Data Pipeline: From Photons to Far Away Worlds

The Kepler mission is described in overview and the Kepler technique for discovering exoplanets is discussed. The design and implementation of the Kepler spacecraft, tracing the data path from photons entering the telescope aperture through raw observation data transmitted to the ground operations team is described. The technical challenges of operating a large aperture photometer with an unprecedented 95 million pixel detector are addressed as well as the onboard technique for processing and reducing the large volume of data produced by the Kepler photometer. The technique and challenge of day-to-day mission operations that result in a very high percentage of time on target is discussed. This includes the day to day process for monitoring and managing the health of the spacecraft, the annual process for maintaining sun on the solar arrays while still keeping the telescope pointed at the fixed science target, the process for safely but rapidly returning to science operations after a spacecraft initiated safing event and the long term anomaly resolution process.The ground data processing pipeline, from the point that science data is received on the ground to the presentation of preliminary planetary candidates and supporting data to the science team for further evaluation is discussed. Ground management, control, exchange and storage of Kepler's large and growing data set is discussed as well as the process and techniques for removing noise sources and applying calibrations to intermediate data products