Improved modelling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

This paper provides a theoretical investigation of recombination at grain boundaries in both bulk and p-n junction regions of silicon solar cells. Previous models of grain boundaries and grain boundary properties are reviewed. A two dimensional numerical model of grain boundary recombination is presented in this paper. This numerical model is compared to existing analytical models of grain boundary recombination within both bulk and p-n junction regions of silicon solar cells. This analysis shows that, under some conditions, existing models poorly predict the recombination current at grain boundaries. Within bulk regions of a device, the effective surface recombination velocity at grain boundaries is overestimated in cases where the region around the grain boundary is not fully depleted of majority carriers. For vertical grain boundaries (columnar grains), existing models are shown to underestimate the recombination current within p-n junction depletion regions. This current has an ideality factor of about 1.8. An improved analytical model for grain boundary recombination within the p-n junction depletion region is presented. This model considers the effect of the grain boundary charge on the electric field within the p-n junction depletion region. The grain boundary charge reduces the p-n junction electric field, at the grain boundary, enhancing recombination in this region. This model is in agreement with the numerical results over a wide range of grain boundary recombination rates. In extreme cases, however, the region of enhanced, high ideality factor recombination can extend well outside the p-n junction depletion region. This leads to a breakdown of analytical models for both bulk and p-n junction recombination, necessitating the use of the numerical model

Optimisation of rear contact geometry of high efficiency silicon solar cells using three dimensional numerical modelling

This paper describes the use of three-dimensional (3D) device modelling for the optimisation of the rear contact geometry of high-efficiency silicon solar cells. We describe the techniques and models used as well as their limitations. Our approach is contrasted with previously published 3D studies of high-efficiency silicon solar cells. Results show that the optimum spacing is about 2/3 of that predicted by 2D simulations, and exhibits a much stronger dependence on contact spacing. The optimal value found is about 60% of that of the present UNSW PERL cells, however, the possible efficiency gain is only about 0.1% absolute

Grain boundary modelling and characterization of thin-film silicon solar cell

An analytical model is developed to decribe recombination currents arising from recombination at grain boundaries (GBs) in the depletion region of a p-n junction solar cell. Grain boundaries are modelled as having a single energy evel in the energy gap, and partial occupancy of these stats gives raise to a chage on the GB. The analytical model is compared to a complete numerical simulation package (DESSIS) and found to be in excellent agreement. Additionally,. cross sectional EBIC images of a multilayer device containing vertical GBs are presented. The experimental data is comared qualitatively with results derived from numerical modelling

Limits to the efficiency of silicon multilayer thin film solar cells

Thin film crystalline silicon solar cells can only achieve high efficiencies if light-trapping can be used to give a long optical path lengtrh, while simulatneously achieving near unity collection probabilities for all generated carriers. This necessitates a supporting substrate of a foreign material, with refractive index compatible with light trapping schemes for silicon. The resulting inability to nucleate growth of crystalline silicon films of good crystallographic quality on such foreign substrates, at present prevents the achievement of high efficiecny devices using conventional single junction solar cell structures. The parallel multijunction solar cell preovides a new approach for achieving high efficiencies from very poor quality material, with near unity collection probabilities for all generated carriers achieved through appropriae junction spacing. Heavy doping is used to minimise the dark saturation current contribution from the layers, therefore allowing respectable voltages. The design strategy, corresponding advantages, theoretical predictions and experimental results are presented