The Relationship Between Beam Power and Radio Power for Classical Double Radio Sources

Beam power is a fundamental parameter that describes, in part, the state of a supermassive black hole system. Determining the beam powers of powerful classical double radio sources requires substantial observing time, so it would be useful to determine the relationship between beam power and radio power so that radio power could be used as a proxy for beam power. A sample of 31 powerful classical double radio sources with previously determined beam and radio powers are studied; the sources have redshifts between about 0.056 and 1.8. It is found that the relationship between beam power, Lj, and radio power, P, is well described by Log(Lj) = 0.84 Log(P) + 2.15, where both L_j and P are in units of 10^(44) erg/s. This indicates that beam power is converted to radio power with an efficiency of about 0.7%. The ratio of beam power to radio power is studied as a function of redshift; there is no significant evidence for redshift evolution of this ratio over the redshift range studied. The relationship is consistent with empirical results obtained by Cavagnolo et al. (2010) for radio sources in gas rich environments, which are primarily FRI sources, and with the theoretical predictions of Willott et al. (1999).Comment: 6 pages, 2 figures, 2 tables; accepted for publication in MNRA

Tuning the electron-phonon coupling in multilayer graphene with magnetic fields

Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings each time the optically active inter Landau level transition is tuned in resonance with the E$_{2g}$ phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction.Comment: 4 pages, 3 figure

Effect of a magnetic field on the two-phonon Raman scattering in graphene

We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33 T. At fields up to 5--10 T the changes are quadratic in the field while they become linear at higher magnetic fields. This effect is explained by the curving of the quasiclassical trajectories of the photo-excited electrons and holes in the magnetic field, which enables us (i) to extract the electron inelastic scattering rate, and (ii) to conclude that electronic scattering accounts for about half of the measured width of the 2D peak.Comment: 11 pages, 7 figure

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material.Comment: 7 pages, 6 figures, submitted to PR

The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction

We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].Comment: 9 pages with 6 figure

Air-Combat Strategy Using Approximate Dynamic Programming

Unmanned Aircraft Systems (UAS) have the potential to perform many of the dangerous missions currently own by manned aircraft. Yet, the complexity of some tasks, such as air combat, have precluded UAS from successfully carrying out these missions autonomously. This paper presents a formulation of a level flight, fixed velocity, one-on-one air combat maneuvering problem and an approximate dynamic programming (ADP) approach for computing an efficient approximation of the optimal policy. In the version of the problem formulation considered, the aircraft learning the optimal policy is given a slight performance advantage. This ADP approach provides a fast response to a rapidly changing tactical situation, long planning horizons, and good performance without explicit coding of air combat tactics. The method's success is due to extensive feature development, reward shaping and trajectory sampling. An accompanying fast and e ffective rollout-based policy extraction method is used to accomplish on-line implementation. Simulation results are provided that demonstrate the robustness of the method against an opponent beginning from both off ensive and defensive situations. Flight results are also presented using micro-UAS own at MIT's Real-time indoor Autonomous Vehicle test ENvironment (RAVEN).Defense University Research Instrumentation Program (U.S.) (grant number FA9550-07-1-0321)United States. Air Force Office of Scientific Research (AFOSR # FA9550-08-1-0086)American Society for Engineering Education (National Defense Science and Engineering Graduate Fellowship

Localization of Dirac electrons by Moire patterns in graphene bilayers

We study the electronic structure of two Dirac electron gazes coupled by a periodic Hamiltonian such as it appears in rotated graphene bilayers. Ab initio and tight-binding approaches are combined and show that the spatially periodic coupling between the two Dirac electron gazes can renormalize strongly their velocity. We investigate in particular small angles of rotation and show that the velocity tends to zero in this limit. The localization is confirmed by an analysis of the eigenstates which are localized essentially in the AA zones of the Moire patterns.Comment: 4 pages, 5 figure

Patterning graphene nanostripes in substrate-supported functionalized graphene: A promising route to integrated, robust, and superior transistors

It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene transistors. Our understandings of the adatom-graphene interaction combined with recent progress in the nanofabrication technology indicate that very stable and high-quality graphene nanostripes could be integrated in substrate-supported functionalized (hydrogenated or fluorinated) graphene using electron-beam lithography. We also propose that parallelizing a couple of graphene nanostripes in a transistor should be preferred for practical application, which is also very useful for transistors based on graphene nanoribbon.Comment: Frontiers of Physics (2012) to be publishe